高功率GaN 微波器件大信号缩放模型

成爱强; 王帅; 徐祖银; 贺瑾; 张天成; 包华广; 丁大志

doi:10.7498/aps.72.20230440

摘要

基于经验基EEHEMT等效电路模型, 针对AlGaN/GaN HEMTs提出一种可缩放大信号模型, 以准确获取宽栅多指器件的电学性能. 所提出的模型从器件的栅宽、栅指个数角度出发, 分别对器件模型的本征参数漏源电流、栅源电容和栅漏电容制定了相应的缩放规则. 为了验证所提缩放大信号模型的准确性, 通过总栅宽为14.4 mm的L频段GaN高效率功率放大器进行比对验证, 仿真与测试结果在1120—1340 MHz频带内功率值不低于46.5 dBm, 漏极效率值不低于70%, 结果高度吻合. 此外, 利用该模型在对大栅宽GaN HEMTs基波信息进行准确仿真的基础上能很好预测器件的高次谐波信息, 可为先进大功率、高效率的微波功率放大器的设计提供重要支撑.

关键词:

Abstract

With the rapid development of wireless communications, GaN HEMT, which has various advantages of high power density, high electron mobility, and high breakdown threshold, receiving increasing attention. Microwave power amplifiers based on GaN HEMTs are widely used in many fields, such as communication, medical, and detection instruments. In the accurate design of GaN microwave power amplifiers, reliable RF large signal model is vitally important. In this paper, a scalable large-signal model based on EEHEMT model is proposed to describe the properties of multifinger AlGaN/GaN high electron mobility transistor (HEMT) accurately. A series of scaling rules is established for the intrinsic parameters of the device, including drain-source current I_ds, input capacitance C_gs and C_gd, which take into account both the gate width of a single finger and the number of gate fingers. With the proposed scalable large-signal model, the performance of the L-band GaN high-efficiency power amplifier with a gate length of 14.4 mm is analyzed. This amplifier demonstrates outstanding performance, with the output power reaching to 46.5 dBm and the drain efficiency arriving at over 70% of the frequency range from 1120 MHz to 1340 MHz. Good agreement between the simulations and experiments is achieved, demonstrating the excellent accuracy of the proposed model. Moreover, the proposed model can further predict the performance of high-order harmonics, providing an effective tool for designing advanced high-power and high-efficiency microwave power amplifiers. Certainly, the EEHEMT model fails to characterize the dynamical behavior induced by trapping and self-heating effects. Thus, for further consideration, scaling models for the thermal resistance and heat capacity need further investigating to broaden the application scope of the proposed model in the case of continuous waves.

Keywords:

作者及机构信息

1.
南京电子器件研究所, 微波功率器件事业部, 南京　210016

2.
南京理工大学微电子学院, 南京　210094

通信作者: 张天成, tczhang@njut.edu.cn

基金项目: 国家重点研发计划(批准号: 2022YFF0707800, 2022YFF0707801)、江苏省重点研发计划产业前瞻与关键核心技术(批准号: BE2022070, BE2022070-2, BE2022070-1)和国家自然科学基金(批准号: 62201257)资助的课题

Authors and contacts

1.
Division of Microwave Power Devices, Nanjing Electronic Devices Institute, Nanjing 210016, China

2.
Department of Microelectronics, Nanjing University of Science and Technology, Nanjing 210094, China

Corresponding author: Zhang Tian-Cheng, tczhang@njut.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFF0707800, 2022YFF0707801), the Primary Research and Development Plan of Jiangsu Province, China (Grant Nos. BE2022070, BE2022070-2, BE2022070-1), and the National Natural Science Foundation of China (Grant No. 62201257).

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参考文献

[1]	Mishra U K, Shen L, Kazior T E, Wu Y F 2008 P. IEEE 96 287 Google Scholar
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[5]	Ayari L, Xiong A, Maziere C, Ouardirhi Z, Gasseling T 2018 91st ARFTG Microwave Measurement Conference Philadelphia, PA, USA, June 15, 2018 p1
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[19]	Crupi G, Schreurs D 2013 Microwave De-embedding: From Theory to Applications (Amsterdam: Academic Press) pp25–26
[20]	高建军 2007 场效应晶体管射频微波建模技术 (北京: 电子工业出版) 第75—109页 Gao J J 2007 RF Microwave Modeling Technology for Field Effect Transistors (Beijing: Electronic Industry Publishing) pp75–109 (in Chinese)
[21]	Lee J W, Lee S, Webb K J 2001 IEEE MTT-S International Microwave Sympsoium Digest Phoenix, AZ, USA, May 20–25, 2001 p679
[22]	Curtice W R 1980 IEEE T. Microw. Theory 28 448 Google Scholar
[23]	刘乃漳, 张雪冰, 姚若河 2021 70 217301 Google Scholar Liu N Z, Zhang X B, Yao R H 2021 Acta. Phys. Sin 70 217301 Google Scholar

施引文献

图 1 GaN HEMTs大信号模型拓扑图

Fig. 1. GaN HEMTs large signal model topology.

下载: 全尺寸图片幻灯片

图 2 建立可缩放大信号模型流程图

Fig. 2. Flow chart of establishing a scalable large signal model.

下载: 全尺寸图片幻灯片

图 3 GaN HEMTs跨导曲线示意图

Fig. 3. Schematic diagram of GaN HEMTs transconductance curve.

下载: 全尺寸图片幻灯片

图 4 I-V/S参数在片测量系统实物图

Fig. 4. Photograph of the devices used to measure I-V/S parameters on wafer.

下载: 全尺寸图片幻灯片

图 5 不同尺寸AlGaN/GaN HEMTs实物图

Fig. 5. Photographs of the different sizes AlGaN/GaN HEMTs.

下载: 全尺寸图片幻灯片

图 6 参数G_mmax和ΔG_m缩放与实测对比

Fig. 6. Comparison between modeled and measured results of parameters G_mmax and ΔG_m

下载: 全尺寸图片幻灯片

图 7 仿真和实测的非归一化g_m对比

Fig. 7. Comparison between model simulated and measured results of non-normalized g_m

下载: 全尺寸图片幻灯片

图 8 输入电容阈值、栅漏传导电容缩放与实测对比

Fig. 8. Comparison between modeled and measured results of input capacitance threshold and gate-drain conduction capacitance.

下载: 全尺寸图片幻灯片

图 9 功率放大器实物图

Fig. 9. Photograph of the power amplifier.

下载: 全尺寸图片幻灯片

图 10 输入、输出匹配电路回波损耗与插入损耗

Fig. 10. Return loss and insertion loss of input and output matching circuit.

下载: 全尺寸图片幻灯片

图 11 仿真和实测的频率扫描结果对比

Fig. 11. Comparison between simulated and measured results in frequency sweep.

下载: 全尺寸图片幻灯片

图 12 仿真和实测的功率扫描结果对比

Fig. 12. Comparison between simulated and measured results in power sweep.

下载: 全尺寸图片幻灯片

图 13 仿真和实测的谐波功率对比

Fig. 13. Comparison between simulated and measured results of the power amplifier harmonic output power.

下载: 全尺寸图片幻灯片

map

[1]	Mishra U K, Shen L, Kazior T E, Wu Y F 2008 P. IEEE 96 287 Google Scholar
[2]	Pengelly R S, Wood S M, Milligan J W, Sheppard S T, Pribble W L 2012 IEEE T. Microw. Theory 60 1764 Google Scholar
[3]	Komiak J J 2015 IEEE Microw. Mag. 16 97
[4]	Raffo A, Bosi G, Vadalà V, Vannini G 2013 IEEE T. Microw. Theory 62 73
[5]	Ayari L, Xiong A, Maziere C, Ouardirhi Z, Gasseling T 2018 91st ARFTG Microwave Measurement Conference Philadelphia, PA, USA, June 15, 2018 p1
[6]	Wang C S, Xu Y H, Yu X M, Ren C J, Wang Z S, Lu H Y, Chen T S, Zhang B, Xu R M 2014 IEEE T. Microw. Theory 62 2878 Google Scholar
[7]	Angelov I, Thorsell M, Kuylenstierna D, Avolio G, Schreurs D, Raffo A, Vannini G 2013 European Microwave Conference Nuremberg, Germany, October 6–10, 2013 p267
[8]	Vitanov S, Palankovski V, Maroldt S 2012 IEEE T. Electron Dev. 59 685 Google Scholar
[9]	Radhakrishna U, Imada T, Palacios T, Antoniadis D 2014 Phys. Status Solidi 11 848 Google Scholar
[10]	Wen Z, Xu Y H, Wang C S, Zhao X D, Chen Z K, Xu R M 2017 International J. Numer. Model. El. 30 2137 Google Scholar
[11]	徐跃杭, 徐锐敏, 李言荣 2017 微波氮化镓功率器件等效电路建模理论与技术 (北京: 科学出版社) 第75页 Xu Y H, Xu R M, Li Y R 2017 Theory and Technology of Equivalent Circuit Modeling for Microwave Gallium Nitride Power Devices (Beijing: Science Press) p75 (in Chinese)
[12]	Jarndal A, Kompa G 2007 IEEE T. Electron Dev. 54 2830 Google Scholar
[13]	Resca D, Santarelli A, Raffo A, Cignani R, Vannini G, Filicori F, Schreurs D M P 2008 IEEE T. Microw. Theory 56 755 Google Scholar
[14]	Resca D, Raffo A, Santarelli A, Vannini G, Filicori F 2009 IEEE T. Microw. Theory 57 245 Google Scholar
[15]	Khurgin J, Ding Y J, Jena D 2007 Appl. Phys. Lett. 91 252104 Google Scholar
[16]	Xu Y H, Fu W L, Wang C S, Ren C J, Lu H Y, Zheng W B, Yu X M, Yan B, Xu R M 2014 J. Electromagnet. Wave. 28 1888 Google Scholar
[17]	Xu Y H, Wang C S, Sun H, Wen Z, Wu Y Q, Xu R M, Yu X M, Ren C J, Wang Z S, Zhang B, Chen T S, Gao T 2017 IEEE T. Microw. Theory 65 2836 Google Scholar
[18]	Alexander A, Leckey J 2015 IEEE MTT-S International Microwave Symposium, Phoenix AZ, USA, May 12–22, 2015 p1
[19]	Crupi G, Schreurs D 2013 Microwave De-embedding: From Theory to Applications (Amsterdam: Academic Press) pp25–26
[20]	高建军 2007 场效应晶体管射频微波建模技术 (北京: 电子工业出版) 第75—109页 Gao J J 2007 RF Microwave Modeling Technology for Field Effect Transistors (Beijing: Electronic Industry Publishing) pp75–109 (in Chinese)
[21]	Lee J W, Lee S, Webb K J 2001 IEEE MTT-S International Microwave Sympsoium Digest Phoenix, AZ, USA, May 20–25, 2001 p679
[22]	Curtice W R 1980 IEEE T. Microw. Theory 28 448 Google Scholar
[23]	刘乃漳, 张雪冰, 姚若河 2021 70 217301 Google Scholar Liu N Z, Zhang X B, Yao R H 2021 Acta. Phys. Sin 70 217301 Google Scholar

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