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为了实现半导体器件在电离辐射环境中电学特性的动态退化过程, 本文基于总剂量效应中陷阱对载流子的俘获/发射过程, 建立了Si-n型金属氧化物半导体场效应管总剂量效应的瞬态特性数值模型. 仿真了不同栅极偏压下, 器件电学特性随累积总剂量的上升而造成的器件退化效应, 并提取了Si/SiO2界面和栅氧化层中陷阱电荷的变化. 仿真发现, 随着累计总剂量的上升, 两个位置处陷阱电荷的数量都趋向于饱和. 当辐照中栅极偏压为正时, 器件阈值电压的退化幅度显著高于辐照偏压为负时的退化幅度. 无论是辐照过程中栅极加正偏压还是反偏压, 都表现出阈值电压的退化幅度随着偏压幅值上升先上升再下降的趋势. 栅极偏压对器件辐照后的退火效应也有一定的影响, 在退火过程中如果栅极偏压不为零, 器件退火后的电学特性恢复幅度比零偏压下的要低一些.
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关键词:
- 辐照 /
- 总剂量 /
- 模型 /
- 金属氧化物半导体场效应管
In this work, we establish a novel numerical model of total ionizing dose effect and use it to simulate the radiation degradation of Si n-metal-oxide-semiconductor field effect transistor (NMOSFET) under different bias voltages. The model is based on the capture/emission process of traps, and is used to simulate the transient characteristics of semiconductor devices under total ionizing dose effect. In the simulation, the changes of trapped holes in Si/SiO2 interface and gate oxide layer are extracted, and it is found that the number of trapped holes at different positions tends to be saturated with the increase of the total dose. When the radiation bias voltage is positive, the degradation amplitude of the threshold voltage is significantly higher than that when the radiation bias voltage is negative. Whether the gate is applied with positive bias or negative bias during the radiation, the degradation amplitude of the threshold voltage shows a trend of first increasing and then decreasing with the increase of the absolute value of radiation bias voltage. Radiation bias voltage also has a certain effect on the annealing effect after radiation. If a gate bias voltage is applied to the device during the annealing, the electrical characteristics recovery amplitude of the device is lower than that under zero bias voltage.-
Keywords:
- radiation /
- total ionizing dose /
- model /
- metal-oxide-semiconductor field effect transistor
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图 3 (a) 界面陷阱电荷密度; (b)氧化层陷阱电荷浓度
Fig. 3. (a) Trapped holes density in Si/SiO2 interface; (b) trapped holes concentration in oxide layer.
图 5 栅氧附近的电场分布
Fig. 5. Distribution of electric field of gate oxide layer and nearby area
图 6 不同辐照偏压下Si-NMOSFET的转移特性
Fig. 6. Transfer characteristics of Si-NMOSFET under the different radiation voltage biases.
图 7 不同辐照偏压下1 Mrad辐照后器件的阈值电压
Fig. 7. Threshold voltage after 1 Mrad radiation under the different radiation voltage biases.
图 8 不同辐照偏压下陷阱电荷 (a)界面陷阱电荷随累计总剂量变化; (b)辐照后氧化层陷阱电荷的分布
Fig. 8. Trapped holes under different radiation biases voltage: (a) Trapped interface holes with accumulated total dose; (b) distribution of trapped holes in oxide layer after irradiation.
图 9 Si-NMOSFET辐照后不同偏压下的退火效应
Fig. 9. Annealing effect of Si-NMOSFET under different bias voltages after radiation.
图 10 不同偏压下退火后的陷阱电荷 (a)界面陷阱电荷密度; (b)氧化层陷阱电荷浓度
Fig. 10. Trapped holes after annealing under the different bias voltages: (a) Trapped interface holes density; (b) trapped holes concentration in oxide layer
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[1] Barth J L, Dyer C S, Stassinopoulos E G 2003 IEEE Trans. Nucl. Sci. 50 466
Google Scholar
[2] Oldham T R, Mclean B 2003 IEEE Trans. Nucl. Sci. 50 483
Google Scholar
[3] Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
Google Scholar
[4] Jiang J Z, Shu W, Chong K S, Lin T, Zwa Lwin N K, Chang J S, Liu J Y 2016 IEEE International Symposium on Circuits and Systems Montreal Montreal, Canada, May 22–25, 2016 p5
[5] Xie X D, Yang Z Z, Deng M X, Chen K B, Li W 2019 IEEE Trans. Device Mater. Reliab. 19 242
Google Scholar
[6] Dodd P E, Shaneyfelt M R, Schwank J R, Felix J A 2010 IEEE Trans. Nucl. Sci. 57 1747
Google Scholar
[7] Hughes H L, Benedetto J M 2003 IEEE Trans. Nucl. Sci. 50 500
Google Scholar
[8] 刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 60 116103
Google Scholar
Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116103
Google Scholar
[9] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Chen M, Bi D W, Zou S C 2011 IEEE Trans. Nucl. Sci. 58 1324
Google Scholar
[10] Johnston A H, Swimm R H, Allen G R, Miyahira T F 2009 IEEE Trans. Nucl. Sci. 56 1941
Google Scholar
[11] McLain M, Barnaby H J, Holbert K E, et al. 2007 IEEE Trans. Nucl. Sci. 54 2210
Google Scholar
[12] 周枭, 罗萍, 凌荣勋, 吴昱操, 蒋鹏凯 2019 微电子学 49 842
Zhou X, L P, Ling R X, Wu Y C, Jiang P K 2019 Microelectronic. 49 842
[13] Schwank J R, Shaneyfelt M R, Fleetwood D M, et al. 2008 IEEE Trans. Nucl. Sci. 55 1833
Google Scholar
[14] 顾朝桥, 郭红霞, 潘霄宇, 雷志峰, 张凤祁, 张鸿, 琚安安, 柳奕天 2021 70 166101
Google Scholar
Gu Z Q, Guo H X, Pan X Y, Lei Z F, Zhang F Q, Zhang H, Ju A A, Liu Y T 2021 Acta Phys. Sin. 70 166101
Google Scholar
[15] Banerje G, Niu G, Cressler J D, Clark S D, Palmer M J, Ahlgren D C 1999 IEEE Trans. Nucl. Sci. 46 1620
Google Scholar
[16] Hjalmarson H P, Pease R L, Witczak S C, et al. 2003 IEEE Trans. Nucl. Sci. 50 1901
Google Scholar
[17] Boch J, Saigne F, Touboul A D, et al. 2006 Appl. Phys. Lett. 88 232113
Google Scholar
[18] 彭超, 雷志锋, 张战刚, 何玉娟, 黄云, 恩云飞 2019 电子学报 47 1755
Google Scholar
Peng C, Lei Z F, Zhang Z G, He Y J, Huang Y, En Y F 2019 Acta Electron. Sin. 47 1755
Google Scholar
[19] 张晋新, 王信, 郭红霞, 冯娟, 吕玲, 李培, 闫允一, 吴宪祥, 王辉 2022 71 058502
Google Scholar
Zhang J X, Wang X, Guo H X, Feng J, Lü L, Li P, Yan Y Y, Wu X X, Wang H 2022 Acta Phys. Sin. 71 058502
Google Scholar
[20] 张书豪, 袁章亦安, 乔明, 张波 2022 71 107301
Google Scholar
Zhang S H, Yuan Z Y A, Qiao M, Zhang B 2022 Acta Phys. Sin. 71 107301
Google Scholar
[21] Kimpton D, Kerr J 1994 Solid State Electron. 37 153
Google Scholar
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