二硫化钼的电子能带结构和低温输运实验进展

吴帆帆; 季怡汝; 杨威; 张广宇

doi:10.7498/aps.71.20220015

摘要

二硫化钼是一种层状的过渡金属硫族化合物半导体, 它在二维自旋电子学、谷电子学及光电子学领域有很多的应用. 本综述以二硫化钼为代表, 系统介绍其单层、双层及转角双层的堆垛和能带结构; 介绍了转角双层莫尔超晶格的制备方法、以及低温电学输运方面的实验进展, 例如超导和强关联现象; 分析了转角过渡金属硫化物莫尔超晶格在优化接触和样品质量等方面存在的一些挑战, 并展望该领域未来的发展.

关键词:

Molybdenum disulfide is a layered transition metal chalcogenide semiconductor. It has many applications in the fields of two-dimensional spintronics, valleytronics and optoelectronics. In this review, molybdenum disulfide is taken as a representative to systematically introduce the energy band structures of single layer, bilayer and twisted bilayer molybdenum disulfide, as well as the latest experimental progress of its realization and low-temperature electrical transport, such as superconductivity and strong correlation phenomenon. Finally, two-dimensional transition metal chalcogenide moiré superlattice’s challenges in optimizing contact and sample quality are analyzed and the future development of this field is also presented.

Keywords:

作者及机构信息

1.
中国科学院物理研究所, 北京凝聚态物理国家研究中心, 北京　100190

2.
中国科学院大学物理科学学院, 北京　100049

3.
松山湖材料实验室, 东莞　523808

通信作者: 杨威, wei.yang@iphy.ac.cn

基金项目: 国家重点研发计划(批准号: 2020YFA0309600, 2021YFA1202900)、国家自然科学基金 (批准号: 11834017, 61888102)、中国科学院战略性先导科技专项 B (批准号: XDB30000000, XDB33000000)和广东省重点领域研发计划(批准号: 2020B0101340001)资助的课题

Authors and contacts

1.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

3.
Songshan Lake Materials Laboratory, Dongguan 523808, China

Corresponding author: Yang Wei, wei.yang@iphy.ac.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant Nos. 2020YFA0309600, 2021YFA1202900), the National Natural Science Foundation of China (Grant Nos. 11834017, 61888102), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000, XDB33000000), and the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101340001).

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施引文献

图 1 单层二硫化钼　(a) 2H相原子结构示意图^[36]; (b) 准粒子自洽格林函数方法计算得到的能带结构^[37]; (c) 荧光谱^[42]; (d) 朗道扇形图^[58]; (e) 谷霍尔效应示意图

Fig. 1. Single layer molybdenum disulfide: (a) Schematic diagram of atomic structure of 2H phase^[36]; (b) energy band structure obtained by quasiparticle self-consistent GW (QSGW) method ^[37]; (c) photoluminescence spectra^[42]; (d) Landau fan^[58]; (e) schematic of valley hall effect.

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图 2 双层二硫化钼的能带结构与物性　(a) 本征双层二硫化钼的原子结构示意图; (b) 准粒子自洽格林函数方法计算得到的能带结构图^[37]; (c) 电场可调的谷霍尔效应^[72]; (d) 转角双层二硫化钼中的莫尔超晶格结构^[88]; (e) 2.65°转角的双层二硫化钼的价带能带结构^[88]; (f) 非平庸的拓扑子能带^[100]

Fig. 2. Bilayer molybdenum disulfide’s band structure and physical properties: (a) Atomic structure of natural double-layer molybdenum disulfide; (b) QSGW calculated band structure^[37]; (c) electric field tunable valley Hall effect^[72]; (d) moiré superlattice in twisted bilayer molybdenum disulfide^[88]; (e) valence band structure of twisted bilayer molybdenum disulfide with 2.65°^[88]; (f) non-trivial topological flat bands^[100].

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图 3 精准制备不同转角的多层同质结　(a), (e)“捡起堆叠”法示意图, 红色框表示半球形基板的放大视图^[109]; (b)—(d) 示意图过程和 (f)—(h) 相应步骤的光学结果, (b) 和 (f) 表示基板和底部单层石墨烯的部分接触^[109]; (i) 利用聚二甲基硅氧烷 (PDMS) 作为媒介, 将分割好的定向单层二硫化钼堆叠成所需转角^[108]; (j) 在沉积300 nm二氧化硅的硅衬底上, 具有精确控制的转角多层MoS₂薄膜^[108]

Fig. 3. Twist angle engineering of multilayer homostructures. (a), (e) Schematic of layer pick-up. The red box represents a zoom-in view of the hemispherical handle substrate^[109]. (b)–(d) Schematics and (f)–(h) corresponding optical micrographs of successive stacking steps. Panels (b) and (f) illustrate a partial contact of the handle with the bottom graphene^[109]. (i) The water-assisted transfer process. Polydimethylsiloxane (PDMS) are used as transfer medium^[108]. (j) Image of multilayer MoS₂ films with precise-controlled twist angles on Si substrates with 300 nm SiO₂^[108].

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图 4 转角双层二硫化钼中可能存在的强关联现象　(a) 关联绝缘态, 红线代表莫特绝缘态; 蓝色区域代表电荷局域态与费米液体共存的状态, 称为轨道选择性莫特态; 黑色虚线内代表近藤晶格模型^[101]; (b) 整数填充附近的超导相变; (c)量子反常霍尔效应; (d) 魏格纳晶格态, 图(d)表示了2/3电子填充态^[123]; (e) 量子临界行为, 红色和蓝色区域表示电阻随温度的依赖关系, 其中α ≠ β

Fig. 4. Strong correlation phenomenon predicted in twisted bilayer MoS₂. (a) Schematic phase diagram. A charge localized state of one species can coexist with a Fermi liquid state of the other, which is known as the orbitally selective Mott (OSM) state. Inside the region marked by the dashed black line the essential ingredients of a Kondo lattice model are realized. The red lines indicate correlated insulating states^[101]. (b) Superconductivity in the doped Mott insulator. (c) Quantum anomalous Hall effect. (d) Wigner Crystal state. The figure shows representative 2/3 electron filling^[123]. (e) Quantum critical behaviors in which α≠β. The blue and red regions indicate the resistance dependence on temperature.

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二硫化钼的电子能带结构和低温输运实验进展