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硅基光子技术的发展为新型微纳光学功能器件和片上系统提供了高可靠、高精度的实现手段. 采用硅基光子技术构建的具有连续(准连续)模式微腔与离散模式的微腔耦合产生的Fano共振现象得到了广泛关注. Fano共振光谱在共振波长附近具有不对称且尖锐的谐振峰, 传输光的强度在共振波长附近从0突变为1, 该机制可显著提高硅基光开关、探测器、传感器, 以及光非互易性全光信号处理的性能. 本综述分析了Fano共振的一般数学表述, 总结了当前硅基光子微腔耦合产生Fano共振的理论模型研究现状, 讨论了不同类型硅光器件实现Fano共振的方法, 比较各种方案优劣及适用场合, 梳理了Fano共振在全光信号处理方面的应用研究情况. 最后探讨存在的一些问题及未来可能的相关研究方向.The development of silicon photonics provides a method of implementing high reliability and high precision for new micro-nano optical functional devices and system-on-chips. The asymmetric Fano resonance phenomenon caused by the mutual coupling of optical resonant cavities is extensively studied. The spectrum of Fano resonance has an asymmetric and sharp slope near the resonance wavelength. The wavelength range for tuning the transmission from zero to one is much narrow in Fano lineshape, therefore improving the figure of merits of power consumption, sensing sensitivity, and extinction ratio. The mechanism can significantly improve silicon-based optical switches, detectors, sensors, and optical non-reciprocal all-optical signal processing. Therefore, the mechanism and method of generating the Fano resonance, the applications of silicon-based photonic technology, and the physical meaning of the Fano formula’s parameters are discussed in detail. It can be concluded that the primary condition for creating the Fano resonance is that the dual-cavity coupling is a weak coupling, and the detuning of resonance frequency of the two cavities partly determines Fano resonance lineshapes. Furthermore, the electromagnetically induced transparency is generated when the frequency detuning is zero. The methods of generating Fano resonance by using different types of devices in silicon photonics (besides the two-dimensional photonic crystals) and the corresponding evolutions of Fano resonance are introduced and categorized, including simple photonic crystal nanobeam, micro-ring resonator cavity without sacrificing the compact footprint, micro-ring resonator coupling with other structures (mainly double micro-ring resonators), adjustable Mach-Zehnder interferometer, and others such as slit waveguide and self-coupling waveguide. Then, we explain the all-optical signal processing based on the Fano resonance phenomenon, and also discuss the differences among the design concepts of Fano resonance in optimizing optical switches, modulators, optical sensing, and optical non-reciprocity. Finally, the future development direction is discussed from the perspective of improving Fano resonance parameters. The topology structure can improve the robustness of the Fano resonance spectrum; the bound states in continuous mode can increase the slope of Fano spectrum; the Fano resonance can expand the bandwidth of resonance spectrum by combining other material systems besides silicon photonics; the multi-mode Fano resonances can enhance the capability of the spectral multiplexing; the reverse design methods can improve the performance of the device. We believe that this review can provide an excellent reference for researchers who are studying the silicon photonic devices.
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Keywords:
- optical resonant cavity /
- silicon photonics /
- photonic integration /
- Fano resonance
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图 1 (a) q与相移δ之间的关系曲线; (b)—(f) q →
$ -\infty $ , q = –1, q = 0, q = +1, q →$ +\infty $ 时对应的传输光谱; (g)不同半高宽Γ对Fano线形的影响; (h)不同共振波长ω0对应的光谱Fig. 1. (a) Relationship between q and the phase shift δ; (b)–(f) transmitted spectra corresponding to q →
$ -\infty $ , q =–1, q = 0, q = + 1, q →$ +\infty $ , respectively; (g) effect of different half-widths Γ on Fano lineshapes; (h) different spectra corresponding to different resonance wavelengths ω0.图 4 各种PCNC产生Fano共振的方法 (a)单PCNC[38]; (b) PCNC侧耦合F-P谐振器[39]; (c)纳米微机电结构动态控制Fano共振光谱[37]; (d) PCN的带隙边缘模式耦合PCNC[40]; (e)具有简并带隙边缘模式的双PCNC[43]; (f)双排PCN构建的布拉格反射结构的(i)整体结构图和(ii)俯视图[44]
Fig. 4. Various PCNC structures for Fano resonance: (a) Single PCNC[38]; (b) PCNC side coupled F-P resonator[39]; (c) dynamic control of Fano resonance with a nanoelectromechanical structure[37]; (d) band edge mode of PCN couple with PCNC[40]; (e) double PCNCs with degenerate band edges mode[43]; (f) the overall structure (i) and top view (ii) Bragg reflection structure constructed with double-row PCN[44].
图 5 紧凑型MRR产生Fano共振的方法 (a)错位总线波导耦合MRR[46]; (b)双模式总线波导耦合MRR[47]; (c)直波导端面反射耦合MRR[48]; (d) 反馈直波导耦合MRR[50]; (e)直波导耦合带有相移布拉格光栅的MRR[51]; (f)总线波导结合光栅/空气孔/狭缝耦合MRR[20,34,54-56]
Fig. 5. Various MRRs with compact footprint for Fano resonance: (a) Straight waveguide with misalignment[46]; (b) dual-mode bus waveguide[47]; (c) straight waveguide with end face reflection[48]; (d) straight waveguide with feedback[50]; (e) MRR with phase-shifted Bragg grating[51]; (f) bus waveguide combined Bragg grating/air holes/slits[20,34,54-56].
图 6 各种复合MRR产生Fano共振的方法 (a)耦合模式理论分析双MRR结构[57]; (b)等效F-P单元分析多环耦合结构[36]; (c)双环嵌套结构[59-64]; (d)双环反馈耦合结构[67,68]; (e) Sagnac形成F-P腔耦合MRR[75]; (f)等效双马赫-曾德尔干涉仪[35,76-78]
Fig. 6. Various complex MRRs for Fano resonance: (a) Analysis of double MRR using coupling mode theory[57]; (b) analysis of multi-ring coupling with equivalent F-P unit[36]; (c) double-MRRs nested structure[59-64]; (d) double-MRRs with feedback configuration[67,68]; (e) Sagnac formed F-P cavity couples MRR[75]; (f) equivalent double Mach-Zehnder interferometer[35,76-78].
图 7 MRR与各种变异结构MZI耦合产生Fano共振的方法 (a) MZI耦合MRR模型[79]; (b) MZI侧边耦合MRR[83]; (c) 双4 × 4多模耦合器组成双MZI[85]; (d) MZI双臂耦合交叉环[86]; (e) MZI双臂耦合MRR及交叉波导[87]; (f)双MZI耦合双MRR[22]
Fig. 7. MRR coupled with variant MZI for Fano resonance: (a) Model for MZI coupled MRR[79]; (b) MZI side coupled MRR[83]; (c) dual 4 × 4 multimode couplers form dual MZI[85]; (d) dual-arm of MZI coupled cross-loop waveguide[86]; (e) dual-arm of MZI coupled MRR and cross waveguide[87]; (f) dual MZI coupled dual MRR[22].
图 12 Fano共振传感 (a)波导截面[46]; (b)光栅式MRR[68]; (c)传感测试装置[63,64]; (d) Fano共振光谱随折射率传感变化曲线, 图中RI (refractive index)代表折射率[56]
Fig. 12. Fano resonance for sensing applications: (a) Cross section of waveguide[46]; (b) MRR composed of grating[68]; (c) setup for sensor[63,64]; (d) spectrum of Fano resonance versus refractive index (RI)[56].
图 13 基于EIT的光非互易性传输 (a) 微环形成双MZI结构[35]; (b)非互易性光谱特征[35]; (c)端口1波长随输入功率变化曲线[35]; (d) 端口2波长随输入功率变化曲线[101]
Fig. 13. EIT-based optical nonreciprocal transmission: (a) Microrings forming a dual MZIs[35]; (b) characteristics of optical nonreciprocity spectral[35]; (c) wavelength of port 1 versus input power[35]; (d) wavelength of port 2 versus input power[101].
表 1 不同PCNC产生Fano共振的参数表
Table 1. Parameters for Fano resonance based on different PCNCs.
表 2 不同紧凑型MRR产生Fano共振的参数表
Table 2. Parameters for Fano resonance based on different compact MRRs.
结构 尺寸/(μm×μm) 消光比/dB 斜率 性能 文献 总线错位波导耦合MRR ~20×30 30 葡萄糖灵敏度24 mg/dl [46] 多模总线波导耦合MRR ~1020×230 6 27.1/nm [47] 端面反射总线波导耦合MRR ~22×10000 30 折射率探测极限~10–8 RIU [48] MRR耦合反馈总线波导 ~20×350 30.8 226.5 dB/nm [49,50] MRR耦合相移光栅 ~60×60 20 [51] MRR耦合由两个布拉格
光栅形成的F-P腔~17×140 22.54 250.4 dB/nm [52] MRR耦合由光子晶体形成的F-P腔 ~6×10 23 折射率灵敏度~1.76 × 10–4 [56] 亚波长光栅耦合MRR ~6×10 12 折射率灵敏度366 nm/RIU [54] 狭缝F-P耦合狭缝MRR ~4×10 20 折射率灵敏度297.13 nm/RIU [55] PCNC侧耦合结合Kerr
非线性材料的PCN~16 关开关功耗0.76 pJ,
切换时间0.707 ps[42] 表 3 多MRR产生Fano共振的参数表
Table 3. Parameters for Fano resonance based on multiple MRRs.
表 4 不同基于MZI 单元产生Fano共振的参数表
Table 4. Parameters for Fano resonance based on MZI unit.
表 5 各种硅光器件产生Fano共振的方法对比
Table 5. Comparation of diffrent silicon waveguide unit for Fano resonance.
方法 尺寸 消光比 斜率 工艺要求 应用 PCNC 小 适中 小 高 光开关/传感 MRR 中 适中 大 一般 传感/滤波器 MZI 大 大 大 一般 调制器/隔离器 -
[1] Lide D R 2017 A Century of Excellence in Measurements, Standards, and Technology (Boston: Government Printing Office) pp116−119
[2] Fano U 1935 Nuovo Cimento 12 154Google Scholar
[3] Fano U 1961 Phys. Rev. A 124 1866Google Scholar
[4] Miroshnichenko A E, Flach S, Kivshar Y S 2010 Rev. Mod. Phys. 82 2257Google Scholar
[5] Limonov M F, Rybin M V, Poddubny A N, Kivshar Y S 2017 Nat. Photonics 11 543Google Scholar
[6] Holfeld C, Löser F, Sudzius M, Leo K, Whittaker D, Köhler K 1998 Phys. Rev. Lett. 81 874Google Scholar
[7] Luk'yanchuk B, Zheludev N I, Maier S A, Halas N J, Nordlander P, Giessen H, Chong C T 2010 Nat. Mater. 9 707Google Scholar
[8] Khanikaev A B, Wu C, Shvets G 2013 Nanophotonics 2 247Google Scholar
[9] Rahmani M, Luk'yanchuk B, Hong M 2013 Laser Photon. Rev. 7 329Google Scholar
[10] Zhou W, Zhao D, Shuai Y C, Yang H, Chuwongin S, Chadha A, Seo J H, Wang K X, Liu V, Ma Z 2014 Prog. Quantum Electron. 38 1Google Scholar
[11] 涂鑫, 陈震旻, 付红岩 2019 68 104210Google Scholar
Tu X, Chen Z M, Fu H Y 2019 Acta Phys. Sin. 68 104210Google Scholar
[12] Kanbara N, Suzuki K, Watanabe T, Iwaoka 2002 H IEEE/LEOS International Conference on Optical MEMs Lugano, Switzerland, August 20–23, 2002 p173
[13] Fang Q, Liow T Y, Song J F, Ang K W, Yu M B, Lo G Q, Kwong D L 2010 Opt. Express 18 5106Google Scholar
[14] Ayazi A, Baehr Jones T, Liu Y, Lim A E J, Hochberg M 2012 Opt. Express 20 13115Google Scholar
[15] Wade J H, Alsop A T, Vertin N R, Yang H, Johnson M D, Bailey R C 2015 ACS Central Sci. 1 374Google Scholar
[16] Sasi M, Sophia d A, Randy R, Carli C, Alice W, Jue W, Martin A G, Muzammil I, Rufus W B 2017 J. Immunol. Methods 448 34Google Scholar
[17] Bekele D, Yu Y, Yvind K, Mork J 2019 Laser Photon. Rev. 13 1900054Google Scholar
[18] Genet C, van Exter M P, Woerdman J 2003 Opt. Commun. 225 331Google Scholar
[19] Connerade J P, Lane A 1988 Rep. Prog. Phys. 51 1439Google Scholar
[20] Gu L, Fang L, Fang H, Li J, Zheng J, Zhao J, Zhao Q, Gan X 2020 APL Photonics 5 016108Google Scholar
[21] Fan S 2002 Appl. Phys. Lett. 80 908Google Scholar
[22] Liu X, Yu Y, Zhang X 2019 Opt. Lett. 44 251Google Scholar
[23] Smith D D, Chang H, Fuller K A, Rosenberger A, Boyd R W 2004 Phys. Rev. A 69 063804Google Scholar
[24] Mahan G D 2013 Many-particle Physics (Boston: Springer) pp205−218
[25] Miroshnichenko A E, Mingaleev S F, Flach S, Kivshar Y S 2005 Phys. Rev. E 71 036626Google Scholar
[26] Manolatou C, Khan M, Fan S, Villeneuve P R, Haus H, Joannopoulos J 1999 IEEE J. Quantum Electron. 35 1322Google Scholar
[27] Fan S, Suh W, Joannopoulos J D 2003 J. Opt. Soc. Am. A 20 569Google Scholar
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