-
The magnetoelectric (ME) heterostructure is composed of ferromagnetic and ferroelectric materials. The heterostructural ME effect originates from piezoelectric effect in the ferroelectric component and magnetostrictive effect in the ferromagnetic component. The magnetoelectric heterostructure has higher magnetoelectric coupling coefficient and lower dielectric loss than the particulate composites, and thus leading to several promising applications such as in the magnetic field sensors, the energy harvesters, antenna and memory devices. In this paper, we review the recent research progress in ME heterostructure for device applications, and present a development course of ME heterostructure. Finally, we also summarize the challenges of developing the ME heterostructure and point out its perspectives.
-
Keywords:
- magnetoelectric effect /
- magnetoelectric heterostructure /
- magnetic sensor /
- magnetic device
[1] Dong S, Liu J M 2010 Physics 39 714 (in Chinese) [董帅, 刘俊明 2010 物理 39 714]
[2] Li X G, Xu X Q, Qian T 2005 J. Sichuan Univ. (Nat. Sci. Ed.) 42 43 (in Chinese) [李晓光, 许雪芹, 钱天 2005 四川大学学报(自然科学版) 42 43]
[3] Dong S, Xiang H J 2014 Physics 43 173 (in Chinese) [董帅, 向红军 2014 物理 43 173]
[4] Yu P, Zhang J X 2013 Prog. Phys. 33 369 (in Chinese) [于浦, 张金星 2013 物理学进展 33 369]
[5] Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101
[6] Jin J Z, Lu S G, Chanthad C, Zhang Q M, Hague M A, Wang Q 2011 Adv. Mater. 23 3853
[7] van Run A M J G, Terrell D R, Scholing J H 1974 J. Mater. Sci. 9 1710
[8] Benveniste Y 1995 Phys. Rev. B 51 16424
[9] Nan C W 1994 Phys. Rev. B 50 6082
[10] Srinivasan G, Rasmussen E T, Gallegos J, Srinivasan R, Bokhan Y I, Laletin V M 2001 Phys. Rev. B 64 214408
[11] Zhou J P, Shi Z, Liu G, He H C, Nan C W 2006 Acta Phys. Sin. 55 3766 (in Chinese) [周剑平, 施展, 刘刚, 何泓材, 南策文 2006 55 3766]
[12] Fiebig M 2005 J. Phys. D: Appl. Phys. 38 R123
[13] Priya S, Islam R, Dong S X, Viehland D 2007 J. Electroceram. 19 147
[14] Ryu J, Carazo A V, Uchino K, Kim H E 2001 Jpn. J. Appl. Phys. Part 1 40 4948
[15] Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceram. 8 107
[16] Wang Y J, Gray D, Berry D, Gao J Q, Li M H, Li J F, Viehland D 2011 Adv. Mater. 23 4111
[17] Zhang Y, Gao Y J, Hu C, Tan X Y, Qiu D, Zhang T T, Zhu Y D, Li M Y 2016 Acta Phys. Sin. 65 167501 (in Chinese) [张源, 高雁军, 胡诚, 谭兴毅, 邱达, 张婷婷, 朱永丹, 李美亚 2016 65 167501]
[18] Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海, 文玉梅, 李平, 卞雷祥 2008 57 7292]
[19] Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053905
[20] Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053904
[21] Li M H, Berry D, Das J, Gray D, Li J F, Viehland D 2011 J. Am. Ceram. Soc. 94 3738
[22] Gao J Q, Das J, Xing Z P, Li J F, Viehland D 2010 J. Appl. Phys. 108 084509
[23] Liu G, Nan C W, Cai N, Lin Y H 2004 J. Appl. Phys. 95 2660
[24] Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 094409
[25] Dong S X, Li J F, Viehland D 2004 IEEE Trans. Ultrason. Ferr. 51 794
[26] Wang Y J, Hasanyan D, Li M H, Gao J Q, Li J F, Viehland D 2013 IEEE Trans. Ultrason. Ferr. 60 1227
[27] Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrason. Ferr. 50 1253
[28] Wang Y J, Hasanyan D, Li J F, Viehland D, Luo H S 2012 Appl. Phys. Lett. 100 202903
[29] Hasanyan D, Gao J, Wang Y, Viswan R, Li M, Shen Y, Li J, Viehland D 2012 J. Appl. Phys. 112 013908
[30] Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 96 3382
[31] Gao J Q, Shen Y, Wang Y J, Finkel P, Li J F, Viehland D 2011 IEEE Trans. Ultrason. Ferr. 58 1545
[32] Petrov V M, Srinivasan G, Bichurin M I, Galkina T A 2009 J. Appl. Phys. 105 063911
[33] Wang Y J, Or S W, Chan H L W, Zhao X Y, Luo H S 2008 J. Appl. Phys. 103 124511
[34] Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 5305
[35] Jia Y M, Luo H S, Zhao X Y, Wang F F 2008 Adv. Mater. 20 4776
[36] Zhai J Y, Dong S X, Xing Z P, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 083507
[37] Wang Y J, Gray D, Berry D, Gao J Q, Li J F, Viehland D, Luo H S 2011 Phys. Status Solidi R 5 232
[38] Jiao J 2013 Ph. D. Dissertation (Shanghai: University of Chinese Academy of Sciences) (in Chinese) [焦杰 2013 博士学位论文 (上海:中国科学院大学)]
[39] Chu Z, Shi H, Shi W, Liu G, Wu J, Yang J, Dong S 2017 Adv. Mater. 29 1606022
[40] Dong S X, Zhai J, Bai F, Li J F, Viehland D 2005 Appl. Phys. Lett. 87 062502
[41] Bichurin M I, Petrov R V, Petrov V M 2013 Appl. Phys. Lett. 103 092902
[42] Liu G X, Zhang C L, Dong S X 2014 J. Appl. Phys. 116 074104
[43] Palneedi H, Maurya D, Kim G Y, Priya S, Kang S J L, Kim K H, Choi S Y, Ryu J 2015 Appl. Phys. Lett. 107 012904
[44] Palneedi H, Maurya D, Geng L D, Song H C, Hwang G T, Peddigari M, Annapureddy V, Song K, Oh Y S, Yang S C, Wang Y U, Priya S, Ryu J 2018 ACS Appl. Mater. Inte. 10 11018
[45] Palneedi H, Maurya D, Kim G Y, Annapureddy V, Noh M S, Kang C Y, Kim J W, Choi J J, Choi S Y, Chung S Y, Kang S L, Priya S, Ryu J 2017 Adv. Mater. 29 1605688
[46] Ramesh R, Spaldin N A 2007 Nat. Mater. 6 21
[47] Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062
[48] Wan H, Xie L Q, Wu X Z, Liu X C 2005 Acta Phys. Sin. 54 3872 (in Chinese) [万红, 谢立强, 吴学忠, 刘希从 2005 54 3872]
[49] He H C, Lin Y H, Nan C W 2008 Chin. Sci. Bull. 53 1136 (in Chinese) [何泓材, 林元华, 南策文 2008 科学通报 53 1136]
[50] Zheng R K, Li X G 2013 Prog. Phys. 33 359 (in Chinese) [郑仁奎, 李晓光 2013 物理学进展 33 359]
[51] He H C, Wang J, Zhou B P, Nan C W 2007 Adv. Funct. Mater. 17 1333
[52] He H C, Zhou J P, Wang J, Nan C W 2006 Appl. Phys. Lett. 89 052904
[53] Deng C Y, Zhang Y, Ma J, Lin Y H, Nan C W 2007 J. Appl. Phys. 102 074114
[54] Zhou J P, He H C, Zhang Y, Deng C Y, Shi Z, Nan C W 2007 Appl. Phys. A: Mater. 89 553
[55] Marauska S, Jahns R, Greve H, Quandt E, Knchel R, Wagner B 2012 J. Micromech. Microeng. 22 065024
[56] Marauska S, Jahns R, Kirchhof C, Claus M, Quandt E, Knoechel R, Wagner B 2013 Sensor. Actuat. A: Phys. 189 321
[57] Jahns R, Zabel S, Marauska S, Gojdka B, Wagner B, Knchel R, Adelung R, Faupel F 2014 Appl. Phys. Lett. 105 052414
[58] Greve H, Woltermann E, Jahns R, Marauska S, Wagner B, Knoechel R, Wuttig M, Quandt E 2010 Appl. Phys. Lett. 97 152503
[59] Lage E, Kirchhof C, Hrkac V, Kienle L, Jahns R, Knoechel R, Quandt E, Meyners D 2012 Nat. Mater. 11 523
[60] Wang Y J, Li J F, Viehland D 2014 Mater. Today 17 269
[61] Wang Y J, Gao J Q, Li M H, Shen Y, Hasanyan D, Li J F, Viehland D 2014 Philos. Trans. A: Math. Phys. Eng. Sci. 372 20120455
[62] Palneedi H, Annapureddy V, Priya S, Ryu J 2016 Actuators 5 9
[63] Chu Z, PourhosseiniAsl M, Dong S 2018 J. Phys. D: Appl. Phys. 51 243001
[64] Gao J Q, Wang Y J, Li M H, Shen Y, Li J F, Viehland D 2012 Mater. Lett. 85 84
[65] Wang Y J, Gray D, Berry D, Li M H, Gao J Q, Li J F, Viehland D 2012 J. Alloy. Compd. 513 242
[66] Wang Y J, Gray D, Gao J Q, Berry D, Li M H, Li J F, Viehland D, Luo H S 2012 J. Alloy. Compd. 519 1
[67] Das J, Gao J, Xing Z, Li J F, Viehland D 2009 Appl. Phys. Lett. 95 092501
[68] Wang Y J, Gray D, Berry D, Li J F, Viehland D 2012 IEEE Trans. Ultrason. Ferr. 59 859
[69] Gao J Q, Gray D, Shen Y, Li J F, Viehland D 2011 Appl. Phys. Lett. 99 153502
[70] Wang Y J, Li M H, Hasanyan D, Gao J Q, Li J F, Viehland D 2012 Appl. Phys. Lett. 101 092905
[71] Yang Y D, Gao J Q, Wang Z G, Li M H, Li J F, Das J, Viehland D 2011 Mater. Res. Bull. 46 266
[72] Li M H, Wang Z G, Wang Y J, Li J F, Viehland D 2013 Appl. Phys. Lett. 102 082404
[73] Luo H S, Jiao J, Li X B, Zhao X Y, Xu Q, Yue Q W 2014 Mod. Phys. 26 36 (in Chinese) [罗豪甦, 焦杰, 李晓兵, 赵祥永, 许晴, 岳晴雯 2014 现代物理知识 26 36]
[74] Li M H, Gao J Q, Wang Y J, Gray D, Li J F, Viehland D 2012 J. Appl. Phys. 111 104504
[75] Xing Z P, Zhai J Y, Gao J Q, Li J F, Viehland D 2009 IEEE Electr. Device Lett. 30 445
[76] Zhuang X, Sing M L C, Cordier C, Saez S, Dolabdjian C, Shen L, Li J F, Li M, Viehland D 2011 IEEE Sens. J. 11 2266
[77] Jahns R, Greve H, Woltermann E, Quandt E, Knchel R 2012 Sensor. Actuat. A: Phys. 183 16
[78] Liu Y T, Jiao J, Ma J S, Ren B, Li L Y, Zhao X Y, Luo H S, Shi L 2013 Appl. Phys. Lett. 103 212902
[79] Salzer S, Hft M, Knchel R, Hayes P, Yarar E, Piorra A, Quandt E 2015 Proc. Eng. 120 940
[80] Hayes P, Salzer S, Reermann J, Yarar E, Rbisch V, Piorra A, Meyners D, Hft M, Knchel R, Schmidt G, Quandt E 2016 Appl. Phys. Lett. 108 182902
[81] Zhuang X, Lam Chok Sing M, Dolabdjian C 2013 IEEE Trans. Magn. 49 120
[82] Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 88 082907
[83] Nan T X, Hui Y, Rinaldi M, Sun N X 2013 Sci. Rep. 3 1985
[84] Li M H, Matyushov A, Dong C Z, Chen H H, Lin H, Nan T X, Qian Z Y, Rinaldi M, Lin Y H, Sun N X 2017 Appl. Phys. Lett. 110 143510
[85] Chu Z, Shi H, PourhosseiniAsl M J, Wu J, Shi W, Gao X, Yuan X, Dong S 2017 Sci. Rep. 7 8592
[86] Ryu J, Kang J E, Zhou Y, Choi S Y, Yoon W H, Park D S, Choi J J, Hahn B D, Ahn C W, Kim J W, Kim Y D, Priya S, Lee S Y, Jeong S, Jeong D Y 2015 Energ. Environ. Sci. 8 2402
[87] Annapureddy V, Na S M, Hwang G T, Kang M G, Sriramdas R, Palneedi H, Yoon W H, Hahn B D, Kim J W, Ahn C W, Park D S, Choi J J, Jeong D Y, Flatau A B, Peddigari M, Priya S, Kim K H, Ryu J 2018 Energ. Environ. Sci. 11 818
[88] Yao Z, Wang Y E, Keller S, Carman G P 2015 IEEE Trans. Antenn. Propag. 63 3335
[89] Domann J P, Carman G P 2017 J. Appl. Phys. 121 044905
[90] Nan T, Lin H, Gao Y, Matyushov A, Yu G, Chen H, Sun N, Wei S, Wang Z, Li M, Wang X, Belkessam A, Guo R, Chen B, Zhou J, Qian Z, Hui Y, Rinaldi M, McConney M E, Howe B M, Hu Z, Jones J G, Brown G J, Sun N X 2017 Nat. Commun. 8 296
[91] Shen J X, Shang D S, Chai Y S, Wang Y, Cong J Z, Shen S P, Yan L Q, Wang W H, Sun Y 2016 Phys. Rev. Appl. 6 064028
[92] Nan C W 2015 Sci. Sin. Technol. 45 339 (in Chinese) [南策文 2015 中国科学: 技术科学 45 339]
[93] Palneedi H, Yeo H G, Hwang G T, Annapureddy V, Kim J W, Choi J J, Trolier McKinstry S, Ryu J 2017 APL Mater. 5 096111
[94] Zong Y, Zheng T, Martins P, Lanceros Mendez S, Yue Z, Higgins M J 2017 Nat. Commun. 8 38
-
[1] Dong S, Liu J M 2010 Physics 39 714 (in Chinese) [董帅, 刘俊明 2010 物理 39 714]
[2] Li X G, Xu X Q, Qian T 2005 J. Sichuan Univ. (Nat. Sci. Ed.) 42 43 (in Chinese) [李晓光, 许雪芹, 钱天 2005 四川大学学报(自然科学版) 42 43]
[3] Dong S, Xiang H J 2014 Physics 43 173 (in Chinese) [董帅, 向红军 2014 物理 43 173]
[4] Yu P, Zhang J X 2013 Prog. Phys. 33 369 (in Chinese) [于浦, 张金星 2013 物理学进展 33 369]
[5] Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101
[6] Jin J Z, Lu S G, Chanthad C, Zhang Q M, Hague M A, Wang Q 2011 Adv. Mater. 23 3853
[7] van Run A M J G, Terrell D R, Scholing J H 1974 J. Mater. Sci. 9 1710
[8] Benveniste Y 1995 Phys. Rev. B 51 16424
[9] Nan C W 1994 Phys. Rev. B 50 6082
[10] Srinivasan G, Rasmussen E T, Gallegos J, Srinivasan R, Bokhan Y I, Laletin V M 2001 Phys. Rev. B 64 214408
[11] Zhou J P, Shi Z, Liu G, He H C, Nan C W 2006 Acta Phys. Sin. 55 3766 (in Chinese) [周剑平, 施展, 刘刚, 何泓材, 南策文 2006 55 3766]
[12] Fiebig M 2005 J. Phys. D: Appl. Phys. 38 R123
[13] Priya S, Islam R, Dong S X, Viehland D 2007 J. Electroceram. 19 147
[14] Ryu J, Carazo A V, Uchino K, Kim H E 2001 Jpn. J. Appl. Phys. Part 1 40 4948
[15] Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceram. 8 107
[16] Wang Y J, Gray D, Berry D, Gao J Q, Li M H, Li J F, Viehland D 2011 Adv. Mater. 23 4111
[17] Zhang Y, Gao Y J, Hu C, Tan X Y, Qiu D, Zhang T T, Zhu Y D, Li M Y 2016 Acta Phys. Sin. 65 167501 (in Chinese) [张源, 高雁军, 胡诚, 谭兴毅, 邱达, 张婷婷, 朱永丹, 李美亚 2016 65 167501]
[18] Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海, 文玉梅, 李平, 卞雷祥 2008 57 7292]
[19] Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053905
[20] Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053904
[21] Li M H, Berry D, Das J, Gray D, Li J F, Viehland D 2011 J. Am. Ceram. Soc. 94 3738
[22] Gao J Q, Das J, Xing Z P, Li J F, Viehland D 2010 J. Appl. Phys. 108 084509
[23] Liu G, Nan C W, Cai N, Lin Y H 2004 J. Appl. Phys. 95 2660
[24] Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 094409
[25] Dong S X, Li J F, Viehland D 2004 IEEE Trans. Ultrason. Ferr. 51 794
[26] Wang Y J, Hasanyan D, Li M H, Gao J Q, Li J F, Viehland D 2013 IEEE Trans. Ultrason. Ferr. 60 1227
[27] Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrason. Ferr. 50 1253
[28] Wang Y J, Hasanyan D, Li J F, Viehland D, Luo H S 2012 Appl. Phys. Lett. 100 202903
[29] Hasanyan D, Gao J, Wang Y, Viswan R, Li M, Shen Y, Li J, Viehland D 2012 J. Appl. Phys. 112 013908
[30] Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 96 3382
[31] Gao J Q, Shen Y, Wang Y J, Finkel P, Li J F, Viehland D 2011 IEEE Trans. Ultrason. Ferr. 58 1545
[32] Petrov V M, Srinivasan G, Bichurin M I, Galkina T A 2009 J. Appl. Phys. 105 063911
[33] Wang Y J, Or S W, Chan H L W, Zhao X Y, Luo H S 2008 J. Appl. Phys. 103 124511
[34] Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 5305
[35] Jia Y M, Luo H S, Zhao X Y, Wang F F 2008 Adv. Mater. 20 4776
[36] Zhai J Y, Dong S X, Xing Z P, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 083507
[37] Wang Y J, Gray D, Berry D, Gao J Q, Li J F, Viehland D, Luo H S 2011 Phys. Status Solidi R 5 232
[38] Jiao J 2013 Ph. D. Dissertation (Shanghai: University of Chinese Academy of Sciences) (in Chinese) [焦杰 2013 博士学位论文 (上海:中国科学院大学)]
[39] Chu Z, Shi H, Shi W, Liu G, Wu J, Yang J, Dong S 2017 Adv. Mater. 29 1606022
[40] Dong S X, Zhai J, Bai F, Li J F, Viehland D 2005 Appl. Phys. Lett. 87 062502
[41] Bichurin M I, Petrov R V, Petrov V M 2013 Appl. Phys. Lett. 103 092902
[42] Liu G X, Zhang C L, Dong S X 2014 J. Appl. Phys. 116 074104
[43] Palneedi H, Maurya D, Kim G Y, Priya S, Kang S J L, Kim K H, Choi S Y, Ryu J 2015 Appl. Phys. Lett. 107 012904
[44] Palneedi H, Maurya D, Geng L D, Song H C, Hwang G T, Peddigari M, Annapureddy V, Song K, Oh Y S, Yang S C, Wang Y U, Priya S, Ryu J 2018 ACS Appl. Mater. Inte. 10 11018
[45] Palneedi H, Maurya D, Kim G Y, Annapureddy V, Noh M S, Kang C Y, Kim J W, Choi J J, Choi S Y, Chung S Y, Kang S L, Priya S, Ryu J 2017 Adv. Mater. 29 1605688
[46] Ramesh R, Spaldin N A 2007 Nat. Mater. 6 21
[47] Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062
[48] Wan H, Xie L Q, Wu X Z, Liu X C 2005 Acta Phys. Sin. 54 3872 (in Chinese) [万红, 谢立强, 吴学忠, 刘希从 2005 54 3872]
[49] He H C, Lin Y H, Nan C W 2008 Chin. Sci. Bull. 53 1136 (in Chinese) [何泓材, 林元华, 南策文 2008 科学通报 53 1136]
[50] Zheng R K, Li X G 2013 Prog. Phys. 33 359 (in Chinese) [郑仁奎, 李晓光 2013 物理学进展 33 359]
[51] He H C, Wang J, Zhou B P, Nan C W 2007 Adv. Funct. Mater. 17 1333
[52] He H C, Zhou J P, Wang J, Nan C W 2006 Appl. Phys. Lett. 89 052904
[53] Deng C Y, Zhang Y, Ma J, Lin Y H, Nan C W 2007 J. Appl. Phys. 102 074114
[54] Zhou J P, He H C, Zhang Y, Deng C Y, Shi Z, Nan C W 2007 Appl. Phys. A: Mater. 89 553
[55] Marauska S, Jahns R, Greve H, Quandt E, Knchel R, Wagner B 2012 J. Micromech. Microeng. 22 065024
[56] Marauska S, Jahns R, Kirchhof C, Claus M, Quandt E, Knoechel R, Wagner B 2013 Sensor. Actuat. A: Phys. 189 321
[57] Jahns R, Zabel S, Marauska S, Gojdka B, Wagner B, Knchel R, Adelung R, Faupel F 2014 Appl. Phys. Lett. 105 052414
[58] Greve H, Woltermann E, Jahns R, Marauska S, Wagner B, Knoechel R, Wuttig M, Quandt E 2010 Appl. Phys. Lett. 97 152503
[59] Lage E, Kirchhof C, Hrkac V, Kienle L, Jahns R, Knoechel R, Quandt E, Meyners D 2012 Nat. Mater. 11 523
[60] Wang Y J, Li J F, Viehland D 2014 Mater. Today 17 269
[61] Wang Y J, Gao J Q, Li M H, Shen Y, Hasanyan D, Li J F, Viehland D 2014 Philos. Trans. A: Math. Phys. Eng. Sci. 372 20120455
[62] Palneedi H, Annapureddy V, Priya S, Ryu J 2016 Actuators 5 9
[63] Chu Z, PourhosseiniAsl M, Dong S 2018 J. Phys. D: Appl. Phys. 51 243001
[64] Gao J Q, Wang Y J, Li M H, Shen Y, Li J F, Viehland D 2012 Mater. Lett. 85 84
[65] Wang Y J, Gray D, Berry D, Li M H, Gao J Q, Li J F, Viehland D 2012 J. Alloy. Compd. 513 242
[66] Wang Y J, Gray D, Gao J Q, Berry D, Li M H, Li J F, Viehland D, Luo H S 2012 J. Alloy. Compd. 519 1
[67] Das J, Gao J, Xing Z, Li J F, Viehland D 2009 Appl. Phys. Lett. 95 092501
[68] Wang Y J, Gray D, Berry D, Li J F, Viehland D 2012 IEEE Trans. Ultrason. Ferr. 59 859
[69] Gao J Q, Gray D, Shen Y, Li J F, Viehland D 2011 Appl. Phys. Lett. 99 153502
[70] Wang Y J, Li M H, Hasanyan D, Gao J Q, Li J F, Viehland D 2012 Appl. Phys. Lett. 101 092905
[71] Yang Y D, Gao J Q, Wang Z G, Li M H, Li J F, Das J, Viehland D 2011 Mater. Res. Bull. 46 266
[72] Li M H, Wang Z G, Wang Y J, Li J F, Viehland D 2013 Appl. Phys. Lett. 102 082404
[73] Luo H S, Jiao J, Li X B, Zhao X Y, Xu Q, Yue Q W 2014 Mod. Phys. 26 36 (in Chinese) [罗豪甦, 焦杰, 李晓兵, 赵祥永, 许晴, 岳晴雯 2014 现代物理知识 26 36]
[74] Li M H, Gao J Q, Wang Y J, Gray D, Li J F, Viehland D 2012 J. Appl. Phys. 111 104504
[75] Xing Z P, Zhai J Y, Gao J Q, Li J F, Viehland D 2009 IEEE Electr. Device Lett. 30 445
[76] Zhuang X, Sing M L C, Cordier C, Saez S, Dolabdjian C, Shen L, Li J F, Li M, Viehland D 2011 IEEE Sens. J. 11 2266
[77] Jahns R, Greve H, Woltermann E, Quandt E, Knchel R 2012 Sensor. Actuat. A: Phys. 183 16
[78] Liu Y T, Jiao J, Ma J S, Ren B, Li L Y, Zhao X Y, Luo H S, Shi L 2013 Appl. Phys. Lett. 103 212902
[79] Salzer S, Hft M, Knchel R, Hayes P, Yarar E, Piorra A, Quandt E 2015 Proc. Eng. 120 940
[80] Hayes P, Salzer S, Reermann J, Yarar E, Rbisch V, Piorra A, Meyners D, Hft M, Knchel R, Schmidt G, Quandt E 2016 Appl. Phys. Lett. 108 182902
[81] Zhuang X, Lam Chok Sing M, Dolabdjian C 2013 IEEE Trans. Magn. 49 120
[82] Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 88 082907
[83] Nan T X, Hui Y, Rinaldi M, Sun N X 2013 Sci. Rep. 3 1985
[84] Li M H, Matyushov A, Dong C Z, Chen H H, Lin H, Nan T X, Qian Z Y, Rinaldi M, Lin Y H, Sun N X 2017 Appl. Phys. Lett. 110 143510
[85] Chu Z, Shi H, PourhosseiniAsl M J, Wu J, Shi W, Gao X, Yuan X, Dong S 2017 Sci. Rep. 7 8592
[86] Ryu J, Kang J E, Zhou Y, Choi S Y, Yoon W H, Park D S, Choi J J, Hahn B D, Ahn C W, Kim J W, Kim Y D, Priya S, Lee S Y, Jeong S, Jeong D Y 2015 Energ. Environ. Sci. 8 2402
[87] Annapureddy V, Na S M, Hwang G T, Kang M G, Sriramdas R, Palneedi H, Yoon W H, Hahn B D, Kim J W, Ahn C W, Park D S, Choi J J, Jeong D Y, Flatau A B, Peddigari M, Priya S, Kim K H, Ryu J 2018 Energ. Environ. Sci. 11 818
[88] Yao Z, Wang Y E, Keller S, Carman G P 2015 IEEE Trans. Antenn. Propag. 63 3335
[89] Domann J P, Carman G P 2017 J. Appl. Phys. 121 044905
[90] Nan T, Lin H, Gao Y, Matyushov A, Yu G, Chen H, Sun N, Wei S, Wang Z, Li M, Wang X, Belkessam A, Guo R, Chen B, Zhou J, Qian Z, Hui Y, Rinaldi M, McConney M E, Howe B M, Hu Z, Jones J G, Brown G J, Sun N X 2017 Nat. Commun. 8 296
[91] Shen J X, Shang D S, Chai Y S, Wang Y, Cong J Z, Shen S P, Yan L Q, Wang W H, Sun Y 2016 Phys. Rev. Appl. 6 064028
[92] Nan C W 2015 Sci. Sin. Technol. 45 339 (in Chinese) [南策文 2015 中国科学: 技术科学 45 339]
[93] Palneedi H, Yeo H G, Hwang G T, Annapureddy V, Kim J W, Choi J J, Trolier McKinstry S, Ryu J 2017 APL Mater. 5 096111
[94] Zong Y, Zheng T, Martins P, Lanceros Mendez S, Yue Z, Higgins M J 2017 Nat. Commun. 8 38
计量
- 文章访问数: 10038
- PDF下载量: 633
- 被引次数: 0