搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

半导体材料基因组计划:硅基发光材料

骆军委 李树深

引用本文:
Citation:

半导体材料基因组计划:硅基发光材料

骆军委, 李树深

Semiconductor Materials Genome Initiative: silicon-based light emission material

Luo Jun-Wei, Li Shu-Shen
PDF
导出引用
  • 材料基因组计划旨在通过实验、计算和理论的有机整合协同创新, 实现新材料研发周期减半, 成本降低到现有的几分之一, 以期加速在清洁能源、国家安全、人类福利等方面的进步. 半导体材料的研究和发展奠定了半导体科学技术在当前人类社会发展中至关重要的地位, 半导体材料基因组计划的实施将促使半导体科学技术的研究和应用进入一个崭新的时代. 本文基于基因遗传算法理论设计硅基发光材料的研究工作探讨了半导体材料基因组计划的实施构想. 首先简单介绍了硅基发光的应用前景和开发硅基发光材料所面临的挑战. 随后介绍了基于模拟达尔文物种进化的基因遗传算法和高精度高性能的能带结构计算方法, 设定高效带边发光这一目标, 逆向设计拥有直接带隙发光的二维Si/Ge超晶格和一维Si/Ge核-多壳纳米线, 为实施半导体材料基因组计划提供了一个范例, 显示了材料基因组计划的强大力量和巨大价值. 最后对半导体材料基因组计划的实施提了几点建议.
    The purpose of the semiconductor Materials Genome Initiative is to discover, develop, and deploy new materials in such a way that the research and development period is reduced to a half of original period, and the cost to a fraction of the present cost, thereby speeding up the advance of clean energy sourse, state security, and human welfare, through the organic integration of experiment, computation and theory. Semiconductors play a key role in developing technologies and industries relating to economy, state security, and human welfare. The implement of the semiconductor materials genome initiative will promote the development of semiconductor science and technology into a new era. In this paper, we present a demo of the semiconductor material genome project through introducing our early work on designing silicon-based light emission materials. We first briefly review the status of development of silicon-compatible light emission and challenges facing it. We then demonstrate the power and value of semiconductor materials genome initiative by presenting our recent work on the inverse design of strongly dipole-allowed direct bandgap two-dimensional Si/Ge superlattices and one-dimensional Si/Ge core/multi-shell nanowires, respectively, from two indirect-gap materials (Si and Ge). We use a combination of genetic algorithms with an atomistic pseudopotential Hamiltonian to search through the astronomic number of variants of Sin/Gem//Sip/Geq stacking sequences. We finally give a short perspective of semiconductor materials genome initiative.
    • 基金项目: 量子信息与量子科技前沿协同创新中心(2011计划)、中组部青年千人计划和国家自然科学基金(批准号: 61474116)资助的课题.
    • Funds: Project supported by the Collaborative Innovation Center of the Quantum Information and Quantum Technology Frontier (2011 Project), the National Young 1000 Talents Plan, and the National Natural Science Foundation of China (Grant No. 61474116).
    [1]

    USA National Science and Technology Council 2011 Materials Genome Initiative for Global Competitiveness https://www.whitehouse.gov/mgi [2011-6]

    [2]

    USA National Science and Technology Council 2014 Materials Genome Initiative Strategic Plan https://www.whitehouse.gov/mgi [2014-1-1]

    [3]

    Wang S Q, Ye H Q 2013 Chin. Sci. Bull. 58 3623 (in Chinese) [王绍青, 叶恒强 2013 科学通报 58 3623]

    [4]

    Zhang L, Luo J, Andre S 2013 Nat. Commun. 4 2396

    [5]

    d'Avezac M, Luo J W, Thomas C, et al. 2012 Phys. Rev. Lett. 108 027401

    [6]

    Zhang L, d'Avezac M, Luo J W, et al. 2012 Nano Lett. 12 984

    [7]

    Tsybeskov B L, Lockwood D J 2009 Pro. IEEE 97 1161

    [8]

    Reed G T, Mashanovich G, Gardes F Y, et al. 2010 Nat. Photon. 4 518

    [9]

    Tsybeskov L, Lockwood D J 2009 Proc. IEEE 97 1284

    [10]

    Liang D, Bowers J E 2010 Nat. Photon. 4 511

    [11]

    Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349

    [12]

    Mi Z, Yang J, Bhattacharya P, et al. 2009 Proc. IEEE 97 1239

    [13]

    Vinh N Q, Ha N N, Gregorkiewicz T 2009 Proc. IEEE 97 1269

    [14]

    Priolo F, Gregorkiewicz T, Galli M, et al. 2014 Nat. Nanotechnol. 9 19

    [15]

    Menczigar U, Abstreiter G, Olajos J, et al. 1993 Phys. Rev. B 47 4099

    [16]

    Schmid U, Lukes F, hristensen N, et al. 1990 Phys. Rev. Lett. 65 1933

    [17]

    Zachai R, Eberl K, Abstreiter G, et al. 1990 Phys. Rev. Lett. 64 1055

    [18]

    Weber J, Alonso M I 1989 Phys. Rev. B 40 5683

    [19]

    Froyen S, Wood D M, Zunger A 1987 Phys. Rev. B 36 4547

    [20]

    Gnutzmann U, Clausecker K 1974 Appl. Phys. 3 9

    [21]

    Zhao X, Wei C M, Yang L, et al. 2004 Phys. Rev. Lett. 92 236805

    [22]

    Li D X, Feng J Y 2008 Appl. Phys. Lett. 92 243117

    [23]

    Wang L W, Zunger A 1999 Phys. Rev. B 59 15806

    [24]

    Luo J W, Chanti A N, van Schilfgaarde M, et al. 2010 Phys. Rev. Lett. 104 066405

    [25]

    Wang L W, Bellaiche L, Wei S H, et al. 1998 Phys. Rev. Lett. 80 4725

    [26]

    Hybertsen M S 1994 Phys. Rev. Lett. 72 1514

    [27]

    Gudiksen M S, Lauhon L J, Wang J, et al. 2002 Nature 415 617

    [28]

    Yan R, Gargas D, Yang P 2009 Nat. Photonics 3 569

    [29]

    Curtarolo S, Hart Gus L W, Nardelli M B, et al. 2013 Nat. Mater. 12 191

    [30]

    Greeley J, Jaramillo T F, Bonde J, et al. 2006 Nat. Mater. 5 909

    [31]

    Hautier G, Miglio A, Ceder G, et al. 2013 Nat. Commun. 4 2292

    [32]

    Yu L, Zunger A 2012 Phys. Rev. Lett. 108 068701

    [33]

    Castelli I E, Olsen T, Datta S, et al. 2012 Energy Environmental Sci. 5 5814

    [34]

    McDowell D L, Tinkle S 2013 Nature 53 463

  • [1]

    USA National Science and Technology Council 2011 Materials Genome Initiative for Global Competitiveness https://www.whitehouse.gov/mgi [2011-6]

    [2]

    USA National Science and Technology Council 2014 Materials Genome Initiative Strategic Plan https://www.whitehouse.gov/mgi [2014-1-1]

    [3]

    Wang S Q, Ye H Q 2013 Chin. Sci. Bull. 58 3623 (in Chinese) [王绍青, 叶恒强 2013 科学通报 58 3623]

    [4]

    Zhang L, Luo J, Andre S 2013 Nat. Commun. 4 2396

    [5]

    d'Avezac M, Luo J W, Thomas C, et al. 2012 Phys. Rev. Lett. 108 027401

    [6]

    Zhang L, d'Avezac M, Luo J W, et al. 2012 Nano Lett. 12 984

    [7]

    Tsybeskov B L, Lockwood D J 2009 Pro. IEEE 97 1161

    [8]

    Reed G T, Mashanovich G, Gardes F Y, et al. 2010 Nat. Photon. 4 518

    [9]

    Tsybeskov L, Lockwood D J 2009 Proc. IEEE 97 1284

    [10]

    Liang D, Bowers J E 2010 Nat. Photon. 4 511

    [11]

    Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349

    [12]

    Mi Z, Yang J, Bhattacharya P, et al. 2009 Proc. IEEE 97 1239

    [13]

    Vinh N Q, Ha N N, Gregorkiewicz T 2009 Proc. IEEE 97 1269

    [14]

    Priolo F, Gregorkiewicz T, Galli M, et al. 2014 Nat. Nanotechnol. 9 19

    [15]

    Menczigar U, Abstreiter G, Olajos J, et al. 1993 Phys. Rev. B 47 4099

    [16]

    Schmid U, Lukes F, hristensen N, et al. 1990 Phys. Rev. Lett. 65 1933

    [17]

    Zachai R, Eberl K, Abstreiter G, et al. 1990 Phys. Rev. Lett. 64 1055

    [18]

    Weber J, Alonso M I 1989 Phys. Rev. B 40 5683

    [19]

    Froyen S, Wood D M, Zunger A 1987 Phys. Rev. B 36 4547

    [20]

    Gnutzmann U, Clausecker K 1974 Appl. Phys. 3 9

    [21]

    Zhao X, Wei C M, Yang L, et al. 2004 Phys. Rev. Lett. 92 236805

    [22]

    Li D X, Feng J Y 2008 Appl. Phys. Lett. 92 243117

    [23]

    Wang L W, Zunger A 1999 Phys. Rev. B 59 15806

    [24]

    Luo J W, Chanti A N, van Schilfgaarde M, et al. 2010 Phys. Rev. Lett. 104 066405

    [25]

    Wang L W, Bellaiche L, Wei S H, et al. 1998 Phys. Rev. Lett. 80 4725

    [26]

    Hybertsen M S 1994 Phys. Rev. Lett. 72 1514

    [27]

    Gudiksen M S, Lauhon L J, Wang J, et al. 2002 Nature 415 617

    [28]

    Yan R, Gargas D, Yang P 2009 Nat. Photonics 3 569

    [29]

    Curtarolo S, Hart Gus L W, Nardelli M B, et al. 2013 Nat. Mater. 12 191

    [30]

    Greeley J, Jaramillo T F, Bonde J, et al. 2006 Nat. Mater. 5 909

    [31]

    Hautier G, Miglio A, Ceder G, et al. 2013 Nat. Commun. 4 2292

    [32]

    Yu L, Zunger A 2012 Phys. Rev. Lett. 108 068701

    [33]

    Castelli I E, Olsen T, Datta S, et al. 2012 Energy Environmental Sci. 5 5814

    [34]

    McDowell D L, Tinkle S 2013 Nature 53 463

  • [1] 曹文彧, 张雅婷, 魏彦锋, 朱丽娟, 徐可, 颜家圣, 周书星, 胡晓东. 超晶格插入层对InGaN/GaN多量子阱的应变调制作用.  , 2024, 73(7): 077201. doi: 10.7498/aps.73.20231677
    [2] 王继光, 李珑玲, 邱嘉图, 陈许敏, 曹东兴. 钙钛矿超晶格材料界面二维电子气的调控.  , 2023, 72(17): 176801. doi: 10.7498/aps.72.20230573
    [3] 魏浩铭, 张颖, 张宙, 吴仰晴, 曹丙强. 极性补偿对LaMnO3/LaNiO3超晶格交换偏置场强度的影响.  , 2022, 71(15): 156801. doi: 10.7498/aps.71.20220365
    [4] 刘英光, 薛新强, 张静文, 任国梁. 基于界面原子混合的材料导热性能.  , 2022, 71(9): 093102. doi: 10.7498/aps.71.20211451
    [5] 张结印, 高飞, 张建军. 硅和锗量子计算材料研究进展.  , 2021, 70(21): 217802. doi: 10.7498/aps.70.20211492
    [6] 刘英光, 任国梁, 郝将帅, 张静文, 薛新强. 含有倾斜界面硅/锗超晶格的导热性能.  , 2021, 70(11): 113101. doi: 10.7498/aps.70.20201807
    [7] 刘英光, 郝将帅, 任国梁, 张静文. 不同周期结构硅锗超晶格导热性能研究.  , 2021, 70(7): 073101. doi: 10.7498/aps.70.20201789
    [8] 李柱松, 朱泰山. 超晶格和层状结构传热特性的连续模型及其在能源材料设计中的应用.  , 2016, 65(11): 116802. doi: 10.7498/aps.65.116802
    [9] 罗晓华, 何为, 吴木营, 罗诗裕. 准周期激励与应变超晶格的动力学稳定性.  , 2013, 62(24): 247301. doi: 10.7498/aps.62.247301
    [10] 唐晶晶, 冯妍卉, 李威, 崔柳, 张欣欣. 碳纳米管电缆式复合材料的热导率.  , 2013, 62(22): 226102. doi: 10.7498/aps.62.226102
    [11] 冯现徉, 逯瑶, 蒋雷, 张国莲, 张昌文, 王培吉. In掺杂ZnO超晶格光学性质的研究.  , 2012, 61(5): 057101. doi: 10.7498/aps.61.057101
    [12] 尚杰, 张辉, 曹明刚, 张鹏翔. 氧压对Ba0.6Sr0.4TiO3薄膜晶格常数的影响及BaTiO3/Ba0.6Sr0.4TiO3超晶格的制备.  , 2011, 60(1): 016802. doi: 10.7498/aps.60.016802
    [13] 蒋雷, 王培吉, 张昌文, 冯现徉, 逯瑶, 张国莲. 超晶格SnO2掺Cr的电子结构和光学性质的研究.  , 2011, 60(9): 093101. doi: 10.7498/aps.60.093101
    [14] 孙光爱, 陈波, 吴二冬, 李武会, 张功, 汪小琳, V. Ji, T. Pirling, D. Hughes. 中子衍射分析时效处理对镍基单晶高温合金相结构的影响.  , 2011, 60(8): 086102. doi: 10.7498/aps.60.086102
    [15] 孟利军, 肖化平, 唐超, 张凯旺, 钟建新. 碳纳米管-硅纳米线复合结构的形成和热稳定性.  , 2009, 58(11): 7781-7786. doi: 10.7498/aps.58.7781
    [16] 李志华, 王文新, 刘林生, 蒋中伟, 高汉超, 周均铭. As保护下的生长中断时间对AlSb/InAs超晶格界面粗糙度的影响.  , 2007, 56(3): 1785-1789. doi: 10.7498/aps.56.1785
    [17] 常艳玲, 张琦锋, 孙 晖, 吴锦雷. ZnO纳米线双绝缘层结构电致发光器件制备及特性研究.  , 2007, 56(4): 2399-2404. doi: 10.7498/aps.56.2399
    [18] 邓成良, 邵明珠, 罗诗裕. 带电粒子同超晶格的相互作用与系统的混沌行为.  , 2006, 55(5): 2422-2426. doi: 10.7498/aps.55.2422
    [19] 顾培夫, 陈海星, 秦小芸, 刘 旭. 基于薄膜光子晶体超晶格理论的偏振带通滤波器.  , 2005, 54(2): 773-776. doi: 10.7498/aps.54.773
    [20] 张启义, 田强. 超晶格中电场单极畴与偶极畴的形成和输运.  , 2002, 51(8): 1804-1807. doi: 10.7498/aps.51.1804
计量
  • 文章访问数:  7374
  • PDF下载量:  4703
  • 被引次数: 0
出版历程
  • 收稿日期:  2015-04-07
  • 修回日期:  2015-05-12
  • 刊出日期:  2015-10-05

/

返回文章
返回
Baidu
map