InGaAsSb四元合金材料禁带宽度的计算方法

刘超; 魏志鹏; 安宁; 何斌太; 刘鹏程; 刘国军

doi:10.7498/aps.63.248102

摘要

讨论了计算InGaAsSb四元合金材料禁带宽度常用的Glisson方法和Moon方法, 比较了它们的计算结果. 将两者化成相同形式下的等价公式后发现, 二者都只考虑了Γ点带隙弯曲因子对禁带宽度的影响. 通过考虑自旋轨道分裂带对价带的影响, 提出一种将自旋轨道分裂带弯曲因子引入计算InGaAsSb禁带宽度的新方法. 研究结果表明, 该方法计算结果的准确性要优于两种常见的方法.

关键词:

InGaAsSb /
禁带宽度 /
弯曲因子

Two popular interpolation formulas of calculating InGaAsSb quaternary alloy band gap energy are discussed, and the calculation results from them are presented and compared. It is found, after the two formulas have been converted into equivalent formulas in the same forms, that in them there is taken into consideration only the influence of bowing parameter in the Γ valley. In this paper, the effect of the spin-orbit splitting on the valence band is considered, and a new method of calculating the InGaAsSb band gap is proposed by introducing the bowing parameter of spin-orbit splitting. The results show that the introduction of the bowing parameter of spin-orbit splitting can improve the accuracy of the calculation results compared with the above two methods. When the fraction of In is less than 0.72, the calculation obtained from our method is most accurate.

Keywords:

InGaAsSb /
band gap /
bowing parameter

作者及机构信息

1.
长春理工大学, 高功率半导体激光国家重点实验室, 长春 130022

基金项目: 国家自然科学基金(批准号: 61076039, 61204065, 61205193, 61307045)、高等学校博士学科点专项科研基金(批准号: 20112216120005)、吉林省科技发展计划(批准号: 20121816, 201201116)和高功率半导体激光国家重点实验室基金(批准号: 9140C310101120C031115)资助的课题.

Authors and contacts

1.
National Key Laboratory of High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076039, 61204065, 61205193, 61307045), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20112216120005), the Developing Project of Science and Technology of Jilin Province, China (Grant Nos. 20121816, 201201116), and the National Key Laboratory of High-Power Semiconductor Lasers Foundation, China (Grant No. 9140C310101120C031115).

参考文献

[1]	Xing J L, Zhang Y, Xu Y Q, Wang G W, Wang J, Xiang W, Ni H Q, Ren Z W, He Z H, Niu Z C 2014 Chin. Phys. B 23 017805
[2]	Yang P L, Dai S X, Yi C S, Zhang P Q, Wang X S, Wu Y H, Xu Y S, Lin C G 2014 Acta Phys. Sin. 63 014210 (in Chinese) [杨佩龙, 戴世勋, 易昌申, 张培晴, 王训四, 吴越豪, 许银生, 林常规 2014 63 014210]
[3]	Xing W X, Zhang W, Shi L C, Wang W, Zhao H, Li Z G, Huang Y D, Peng J D 2010 Acta Phys. Sin. 59 8640 (in Chinese) [邢文鑫, 张巍, 石立超, 王雯, 赵红, 李志广, 黄翊东, 彭江得 2010 59 8640]
[4]	Sadao A 1987 J. Appl. Phys. 61 4869
[5]	Magri R, Zunger A, Kroemer H 2005 J. Appl. Phys. 98 043701
[6]	Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 Appl. Phys. Rev. 89 5815
[7]	Guo X 2009 M. S. Thesis (Changchun: Jilin University) (in Chinese) [郭欣 2009 硕士学位论文 (长春: 吉林大学)]
[8]	Rodriguez J B, Cerutti L, Tournié E 2009 Appl. Phys. Lett. 94 023506
[9]	Zhang Y, Wang Y B, Xu Y Q, Xu Y, Niu Z C, Song G F 2012 J. Semicond. 33 044006
[10]	Barrios P, Gupta J, Lapointe J, Aers G, Storey C 2010 Rev. Cub. Fisica 27 42
[11]	Gupta J A, Barrios P J, Lapointe J, Aers G C, Storey C, Waldron P 2009 IEEE Photon. Technol. Lett. 21 1532
[12]	Williams C K, Glisson T H, Hauser J R, Littlejohn M A 1978 J. Electron. Mater. 7 639
[13]	Moon R L, Antypas G A, James L W 1974 J. Electron. Mater. 3 635
[14]	Qteish A, Needs R J 1992 Phys. Rev. B 45 1317
[15]	Van de Walle C G 1989 Phys. Rev. B 39 1871
[16]	Choi H K, Turner G W 1997 Phys. Scr. T69 17
[17]	Dewinter J C, Pollack M A, Srivastava A K, Zyskind J L 1985 J. Electron. Mater. 14 729
[18]	Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 53 218]
[19]	Zhang Y, Wang G W, Tang B, Xu Y Q, Xu Y, Song G F 2011 J. Semicond. 32 103002
[20]	Shterengas L, Belenky G, Kisin M V, Donetsky D 2007 Appl. Phys. Lett. 90 011119
[21]	Paajaste J 2013 Ph. D. Dissertation (Tampere: Tampere University of Technology)
[22]	Zhang Y G, Zheng Y L, Lin C, Li A Z, Liu S 2006 Chin. Phys. Lett. 23 2262
[23]	Bi W G, Li A Z, Zheng Y L, Wang J X, Li C C 1992 J. Infrared Mlllim. Waves 11 415 (in Chinese) [毕文刚, 李爱珍, 郑燕兰, 王建新, 李存才 1992 红外与毫米波学报 11 415]

施引文献

[1]	Xing J L, Zhang Y, Xu Y Q, Wang G W, Wang J, Xiang W, Ni H Q, Ren Z W, He Z H, Niu Z C 2014 Chin. Phys. B 23 017805
[2]	Yang P L, Dai S X, Yi C S, Zhang P Q, Wang X S, Wu Y H, Xu Y S, Lin C G 2014 Acta Phys. Sin. 63 014210 (in Chinese) [杨佩龙, 戴世勋, 易昌申, 张培晴, 王训四, 吴越豪, 许银生, 林常规 2014 63 014210]
[3]	Xing W X, Zhang W, Shi L C, Wang W, Zhao H, Li Z G, Huang Y D, Peng J D 2010 Acta Phys. Sin. 59 8640 (in Chinese) [邢文鑫, 张巍, 石立超, 王雯, 赵红, 李志广, 黄翊东, 彭江得 2010 59 8640]
[4]	Sadao A 1987 J. Appl. Phys. 61 4869
[5]	Magri R, Zunger A, Kroemer H 2005 J. Appl. Phys. 98 043701
[6]	Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 Appl. Phys. Rev. 89 5815
[7]	Guo X 2009 M. S. Thesis (Changchun: Jilin University) (in Chinese) [郭欣 2009 硕士学位论文 (长春: 吉林大学)]
[8]	Rodriguez J B, Cerutti L, Tournié E 2009 Appl. Phys. Lett. 94 023506
[9]	Zhang Y, Wang Y B, Xu Y Q, Xu Y, Niu Z C, Song G F 2012 J. Semicond. 33 044006
[10]	Barrios P, Gupta J, Lapointe J, Aers G, Storey C 2010 Rev. Cub. Fisica 27 42
[11]	Gupta J A, Barrios P J, Lapointe J, Aers G C, Storey C, Waldron P 2009 IEEE Photon. Technol. Lett. 21 1532
[12]	Williams C K, Glisson T H, Hauser J R, Littlejohn M A 1978 J. Electron. Mater. 7 639
[13]	Moon R L, Antypas G A, James L W 1974 J. Electron. Mater. 3 635
[14]	Qteish A, Needs R J 1992 Phys. Rev. B 45 1317
[15]	Van de Walle C G 1989 Phys. Rev. B 39 1871
[16]	Choi H K, Turner G W 1997 Phys. Scr. T69 17
[17]	Dewinter J C, Pollack M A, Srivastava A K, Zyskind J L 1985 J. Electron. Mater. 14 729
[18]	Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 53 218]
[19]	Zhang Y, Wang G W, Tang B, Xu Y Q, Xu Y, Song G F 2011 J. Semicond. 32 103002
[20]	Shterengas L, Belenky G, Kisin M V, Donetsky D 2007 Appl. Phys. Lett. 90 011119
[21]	Paajaste J 2013 Ph. D. Dissertation (Tampere: Tampere University of Technology)
[22]	Zhang Y G, Zheng Y L, Lin C, Li A Z, Liu S 2006 Chin. Phys. Lett. 23 2262
[23]	Bi W G, Li A Z, Zheng Y L, Wang J X, Li C C 1992 J. Infrared Mlllim. Waves 11 415 (in Chinese) [毕文刚, 李爱珍, 郑燕兰, 王建新, 李存才 1992 红外与毫米波学报 11 415]

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