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H2-N2混合气体电容性耦合射频放电在有机低介电系数材料刻蚀中具潜在研究意义. 采用particle-in-cell/Monte Carlo模型模拟了双频（13.56 MHz/27.12 MHz）电压源分别接在结构对称的两个电极上的H2-N2容性耦合等离子体特征，研究了其电非对称效应. 模拟结果表明，通过调节两谐波间的相位角θ，可以改变其电场、等离子体密度、离子流密度的轴向分布及离子轰击电极的能量分布. 当相位角θ 为0°时，低频电极（晶片）附近主要离子（H3+）的密度最小，离子（H3+，H2+，H+）轰击低频电极的流密度及平均能量最高；当θ从0°变化90°时，低频电极的自偏压从-103 V到106 V 近似线性增加，轰击电极的离子流密度变化约±18%，H+离子轰击低频电极的最大能量约减小2.5 倍，轰击电极的平均能量约变化2倍，表明氢离子能量和离子流几乎能独立控制.A N2-H2 capacitively coupled rf discharge has potential applications in etching of organic low dielectric constant (low-k) material for microelectronics technology. In this paper, we investigate the characteristic and electrical asymmetry effect (EAE) on the N2-H2 capacitively coupled plasma used for low-k material etching by particle-in-cell/Monte Carlo (PIC/MC) model, in which the two frequency sources of 13.56 MHz and 27.12 MHz are applied separately to the two electrodes in geometrically in symmetry. It is found that the plasma density profiles, the ion flux density profiles and the energy distribution of ion bombarding electrodes can be changed by adjusting the phase angle θ between the two harmonics. When the phase angle θ is 0°, the density of primary ion (H3+) near low frequencie electrode (LFE) (wafer) is smallest, whereas flux and average energy of ion (H+, H3+, H2+) bombarding LFE are biggest; if the phase angle θ is tuned from 0° to 90°, the dc self-bias increases almost linearly from -103 V to 106 V, ion flux bombarding the LFE decreases by ±18%, the maximum of the ion bombarding energy at the LFE decreases by a factor of 2.5. For the N2-H2 capacitively coupled rf discharge, for the case of two frequencies (13.56 MHz/27.12 MHz) applied separately to the two electrodes, can realize separate control of ion energy and flux via the EAE, and is generally in qualitative agreement with experimental and modeling investigation on the Ar and O2 plasma for a dual-frequency voltage source of 13.56 MHz and 27.12 MHz is applied to the powered electrode. This work supplies a references basis for experimental research and technology that the EAE on the H2-N2 plasmas is used for organic low-k material etching process.
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[1] Chen S T, Chen G S, Yang T J, Chang T C, Yang W H 2003 Electrochem. Solid-State Lett. 6 4
[2] Nagai H, Hiramatsu M, Hori M, Goto T 2003 Jpn. J. Appl. Phys. 42 L212
[3] van Laer K, Tinck S, Samara V, de Marneffe J F, Bogaerts A 2013 Plasma Sources Sci. Technol. 22 025011
[4] Liu X M, Song Y H, Wang Y N 2011 Chin. Phys. B 20 065205
[5] Jiang X Z, Liu Y X, Bi Z H, Lu W Q, Wang Y N 2012 Acta Phys. Sin. 61 015204(in Chinese)[蒋相站, 刘永新, 毕振华, 陆文琪, 王友年 2012 61 015204]
[6] Lee J K, Manuilenko O V, Babaeva N Y, Kim H C, Shon J W 2005 Plasma Sources Sci. Technol. 14 89
[7] Kawamura E, Lieberman M A, Lichtenberg A J 2006 Phys. Plasmas 13 053506
[8] Heil B G, Czarnetzki U, Brinkmann R P, Mussenbrock T 2008 J. Phys. D: Appl. Phys. 41 165202
[9] Donkó Z, Schulze J, Heil B G, Czarnetzki U 2009 J. Phys. D: Appl. Phys. 42 025205
[10] Czarnetzki U, Schulze J, Schunge E, Donko Z 2011 Plasma Sources Sci. Technol. 20 024010
[11] Schulze J, Schngel E, Czarnetzki U, Donkó Z 2009 J. Appl. Phys. 106 063307
[12] Schulze J, Donko Z, Luggenholscher D, Czarnetzki U 2009 Plasma Sources Sci. Technol. 18 034011
[13] Schulze J, Derzsi A, Donko Z 2011 Plasma Sources Sci. Technol. 20 045008
[14] Schulze J, Schungel E, Donko Z, Czarnetzki U 2010 Plasma Sources Sci. Technol. 19 045028
[15] Schungel E, Eremin D, Schulze J, Mussenbrock T, Czarnetzki U 2012 J. Appl. Phys. 112 053302
[16] Zhang Q Z, Jiang W, Hou L J, Wang Y N 2011 J. Appl. Phys. 109 013308
[17] Schungel E, Zhang Q Z, Iwashita S, Schulze J, Hou L J, Wang Y N, Czarnetzki U 2011 J. Phys. D: Appl. Phys. 44 285205
[18] Zhang Q Z, Zhao S X, Jiang W, Wang Y N 2012 J. Phys. D: Appl. Phys. 45 305203
[19] Shon C H, Makabe T 2004 IEEE Trans. Plasma Sci. 32 390
[20] Ishihara K, Shimada T, Yagisawa T, Makabe T 2006 Plasma Phys. Control. Fusion 48 B99
[21] Zhang L Z, Yao F B, Zhao G M, Hao Y Y, Sun Q 2014 Plasma Sci. Technol. 16 203
[22] Uchida S, Takashima S, Hori M, Fukasawa M, Ohshima K, Nagahata K, Tatsumi T 2008 J. Appl. Phys. 103 073303
[23] Nanbu K 2000 IEEE Trans. Plasma Sci. 28 917
[24] Zhang L Z, Meng X L, Zhang S, Gao S X, Zhao G M 2013 Acta Phys. Sin. 62 075201(in Chinese)[张连珠, 孟秀兰, 张素, 高书侠, 赵国明 2013 62 075201]
[25] Wakayama G, Nanbu K 2003 IEEE Trans. Plasma Sci. 31 638
[26] Itikawa Y, Hayashi M, Ichimura A 1986 J. Phys. Chem. Ref. Data. 15 985
[27] Itikawa Y 2006 J. Phys. Chem. Ref. Data. 35 31
[28] Bogaerts A, Gijbels R 2002 Spectrochim. Acta B 57 1071
[29] Itikawa Y, Yoon J S, Song M Y, Han J M, Hwang S H 2008 J. Phys. Chem. Ref. Data. 37 913
[30] Phelps A V 1991 J. Phys. Chem. Ref. Data. 20 557
[31] Tosi P, Dmitrijev O, Bassi B 1992 J. Chem. Phys. 97 3333
[32] Phelps A V 1990 J. Phys. Chem. Ref. Data. 19 653
[33] Phelps A V 2009 Phys. Rev. E 79 066401
[34] Simko T, Martisovits V 1997 Phys. Rev. E 56 5908
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