高k栅介质GeOI金属氧化物半导体场效应管阈值电压和亚阈斜率模型及其器件结构设计

范敏敏; 徐静平; 刘璐; 白玉蓉; 黄勇

doi:10.7498/aps.63.087301

摘要

通过求解沟道与埋氧层的二维泊松方程，同时考虑垂直沟道与埋氧层方向的二阶效应，建立了高k栅介质GeOI金属氧化物半导体场效应管（MOSFET）的阈值电压和亚阈斜率解析模型，研究了器件主要结构参数对器件阈值特性、亚阈特性、短沟道效应、漏极感应势垒降低效应及衬偏效应的影响，提出了优化器件性能的结构参数设计原则及取值范围. 模拟结果与TCAD仿真结果符合较好，证实了模型的正确性与实用性.

关键词:

An analytical model on threshold voltage and subthreshold swing for high-k gate dielectric GeOI MOSFET (metal-oxide-semiconductor field-effect transistor) is established by considering the two-dimensional effects in both channel and buried-oxide layers and solving two-dimensional Poisson’s equation. The influences of the main structural parameters of the device on threshold voltage and subthreshold swing, and the short-channel effects, drain induction barrier lower effect and substrate-biased effect are investigated using the model, and the design principles and value range of the structural parameters are presented to optimize the electrical performances of the device. The simulated results are in good agreement with the TCAD simulated data, confirming the validity of the model.

Keywords:

作者及机构信息

1.
华中科技大学光学与电子信息学院, 武汉 430074

基金项目: 国家自然科学基金（批准号：61274112）资助的课题.

Authors and contacts

1.
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61274112).

参考文献

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施引文献

[1]	Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y, Wong H S P 2001 Proc. IEEE 89 259
[2]	Qin S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q, Shu Y 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒钰 2011 60 058501]
[3]	Choi Y K, Asano K, Lindert N, Subramanian V, King T J, Bokor J, Hu C 2000 IEEE Electron Dev. Lett. 21 254
[4]	Zhang X F, Xu J P, Lai P T, Li C X, Guan J G 2007 Chin. Phys. 16 3820
[5]	Luo X R, Luo Y C, Fan Y, Hu G Y, Wang X W, Zhang Z Y, Fan Y H, Cai J Y, Wang P, Zhou K 2013 Chin. Phys. B 22 027304
[6]	Hu M J, Li C, Xu J F, Lai H K, Chen S Y 2011 Acta Phys. Sin. 60 078102 (in Chinese) [胡美娇, 李成, 徐剑芳, 赖虹凯, 陈松岩 2011 60 078102]
[7]	Le Royer C, Clavelier L, Tabone C, Romanjek K, Deguet C, Sanchez L, Hartmann J M, Roure M C, Grampeix H, Soliveres S, Le Carval G, Truche R, Pouydebasque A, Vinet M, Deleonibus S 2008 Solid State Electron. 52 1285
[8]	De Jaeger B, Kaczer B, Zimmerman P, Opsomer K, Winderickx G, van Steenbergen J, van Moorhem E, Bonzom R, Leys F, Arena C, Bauer M, Werkhoven C, Meuris M, Heyns M 2007 Semicond. Sci. Technol. 22 S221
[9]	Young K K 1989 IEEE Trans. Electron Dev. 36 399
[10]	Joachim H O, Yamaguchi Y, Ishikawa K, Inoue Y, Nishimura T 1993 IEEE Trans. Electron Dev. 40 1812
[11]	Suzuki K, Pidin S 2003 IEEE Trans. Electron Dev. 50 1297
[12]	Ortiz-Conde A, Rodrguez J, Garca Sanchez F J, Liou J J 1998 Solid State Electron. 42 1743
[13]	Sim J H, Kuo J B 1993 IEEE Trans. Electron Dev. 40 755
[14]	Hu P H, Wu Y S, Su P 2009 Semicond. Sci. Technol. 24 045017
[15]	Yan R H, Abbas O, Lee K F 1992 IEEE Trans. Electron Dev. 39 1704
[16]	Balestra F, Benachir M, Brini J, Ghibaudo G 1990 IEEE Trans. Electron Dev. 37 2303
[17]	Salcedo J A, Ortiz-Conde A, Sánchez E J G, Muci J, Liou J J, Yue Y 2001 IEEE Trans. Electron Dev. 48 809
[18]	El Hamid H A, Guitart J R, Iñ\’iguez B 2007 IEEE Trans. Electron Dev. 54 1402
[19]	van Den Daelea W, Augendre E, Le Royer C, Damlencourt J F, Grandchamp B, Cristoloveanu S 2010 Solid State Electron. 54 205
[20]	Omura Y, Konishi H, Sato S 2006 IEEE Trans. Electron Dev. 53 677

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