磁场辅助热处理金属化碳纳米管场发射性能

叶芸; 陈填源; 郭太良; 蒋亚东

doi:10.7498/aps.63.086802

摘要

利用化学镀方法对多壁碳纳米管（multi-walled carbon nanotubes，MWNTs）表面金属化镀镍（MWNTs/Ni），采用丝网印刷制备MWNTs/Ni场发射阴极，并在磁场辅助下热处理所得阴极，研究磁场辅助热处理对MWNTs/Ni阴极的场发射性能的影响. 经300 mT磁场辅助热处理的MWNTs/Ni的场发射阴极开启场强约为0.80 V-1，场增强因子约为16068. 对单根MWNTs/Ni在磁场中的受力情况进行建模分析，实验结果表明：磁场辅助热处理有助于提高MWNTs/Ni在阴极表面的直立分布，提高了MWNTs/Ni的场发射性能.

关键词:

Abstract

The effect of magnetic field assisted heat-treatment on the field emission properties of metalized multi-walled carbon nanotubes (MWNTs) is investigated. The metalized MWNTs are prepared via an electroless plating method, and then the MWNTs/Ni cathodes are fabricated by screen printing. The morphology and composition of MWNTs/Ni were studied by transmission electron microscopy and energy dispersive X-ray detector, and the difference between MWNTs/Ni cathodes heat-treated with or without magnetic field was observed by scanning electron microscopy. The force of a single MWNT coated with Ni was simulated, and the results demonstrate that the magnetic field force could induce the rotation of MWNTs/Ni during magnetic field assisted heat-treatment. The field emission characteristics show that the MWNTs/Ni cathodes heat-treated with magnetic field has a low turn-on field of 0.80 Vm-1 and high field enhancement factor of 16068, which are attributed to the embossment of MWNTs/Ni from substrates under the magnetic field.

Keywords:

field emission /
metalized multi-walled carbon nanotubes /
magnetic field /
electroless plating

作者及机构信息

1.
福州大学物理与信息工程学院, 福州 350002;

2.
电子科技大学电子, 薄膜与集成国家重点实验室, 成都 610054

基金项目: 国家高技术研究发展计划重大专项（批准号：2013AA030601）、国家自然科学基金（批准号：61106053，61101169）和电子薄膜与集成器件国家重点实验室开放基金（批准号：KFJJ201309）资助的课题.

Authors and contacts

1.
College of Physics and Telecommunication Engineering, Fuzhou University, Fuzhou 350002, China;

2.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2013AA030601), the National Natural Science Foundation of China (Grant Nos. 61106053, 61101169), and the State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201309).

参考文献

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施引文献

[1]	Iijima S 1991 Nature 354 56
[2]	Hu X Y, Wang S M, Pei Y H, Tian H W, Zhu P W 2013 Acta Phys. Sin. 62 038101 (in Chinese) [胡小颖, 王淑敏, 裴艳慧, 田宏伟, 朱品文 2013 62 038101]
[3]
[4]
[5]	Gu G R, Ito T 2009 Chin. Phys. B 18 4547
[6]	Shrestha S, Choi W C, Song W, Kwon Y T, Shrestha S P, Park C Y 2010 Carbon 48 54
[7]
[8]
[9]	Rakhi R B, Lim X, Gao X, Wang Y, Wee A T S, Sethupathi K, Ramaprabhu S, Sow C H 2010 Appl. Phys. A 98 195
[10]
[11]	Kyung S J, Park J B, Voronko M, Lee J H, Yeom G Y 2007 Carbon 45 649
[12]	Yu J, Chen J, Deng S Z, Xu N S 2011 Appl. Surf. Sci. 258 738
[13]
[14]	Kim Y C, Sohn K H, Cho Y M, Yoo E H 2004 Appl. Phys. Lett. 84 5350
[15]
[16]	Tasi I S, Huang C W, Huang H K, Jehng J M, Pan T C 2008 Journal of SID Shanghai China, March 12-15, 2007 p639
[17]
[18]	Ajiki H, Ando T 1993 J. Phy. Soc. Jpn. 62 2470
[19]
[20]	Anshu S, Balram T, Vijay Y K 2010 J. Mem. Sci. 361 89
[21]
[22]	Fujiwara M, Oki E, Hamada M, Tonimoto Y 2001 J. Phys. Chem. A 105 4383
[23]
[24]	Jang B K, Sakka Y 2009 Mater. Lett. 63 2545
[25]
[26]
[27]	Lee S H, Ma C C M, Yuen S M, Teng C C, Liao S H, Huang Y L, Tsai M C, Su A, Wang I 2011 Thin Solid Films 519 4166
[28]
[29]	Lee S H, Ma C C M, Yuen S M, Teng C C, Yen M Y, Huang Y L, Yu K C 2012 Diamon Related Mater. 25 111
[30]	Zheng L W, Hu L Q, Xiao X J, Yang F, Lin H, Guo T L 2011 Chin. Phys. B 20 128502
[31]
[32]
[33]	Zhou Z Y, Wang Z L, Lin L W 2007 MEMS and Na-notechnology (Vol. 3) (Beijing: Science Press) p486 (in Chinese) [周兆英, 王中林, 林立伟 2007 微系统和纳米技术 (第3卷) (北京: 科学出版社) 第486页]
[34]	Sano N, Naito M, Kikuchi T 2007 Carbon 45 78
[35]
[36]	Liu G L, Yang Z H, Fang G L 2009 Acta Phys. Sin. 58 3364 (in Chinese) [刘贵立, 杨忠华, 方戈亮 2009 58 3364]
[37]
[38]
[39]	Yang C J, Park J I, Cho Y R 2007 Adv. Eng. Mater. 9 88
[40]
[41]	Vink T J, Gillies M, Kriege J C, Laar H W J J 2003 Appl. Phys. Lett. 83 3552
[42]	Ding H, Feng T, Zhang Z J, Wang K, Qian M, Chen Y W, Sun Z 2010 Appl. Surf. Sci. 256 6595
[43]
[44]	Lee H J, Lee Y D, Cho W S, Ju B K 2006 Appl. Phys. Lett. 88 093115
[45]
[46]
[47]	L W H, Zhang S 2012 Acta Phys. Sin. 61 018801 (in Chinese) [吕文辉, 张帅 2012 61 018801]

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