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Absorption of substrates, small angle for total reflection, and heat generated by photon blocking of electrode, all can lead to saturation and performance degradation of AlGaInP light emitting diodes(LEDs). In this paper, a novel LED composed of compound current spreading layer, compound DBR reflectors, and current blocking layer, is proposed, the saturation characteristic and lifetime are also tested. Simulation results show that there is only tiny invalid photocurrent through the electrode in the novel LEDs. Experimental results indicate that the novel LEDs have higher extraction efficiency and better saturation characteristics. Saturation current of the novel LEDs is as high as 110 mA, and the light intensity is enhanced by treble at saturation current as compared to the conventional LEDs. The accelerated aging test shows that the lifetime of the novel LEDs is as long as 17.8×104 hours, which means the novel LEDs have high reliability and can be used with high current.
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Keywords:
- current blocking layer /
- saturation characteristic /
- lifetime
[1] Lee Y J, Tseng H C, Kuo H C, Wang S C, Chang C W, Hsu T C, Yang Y L, Hsieh M H, Jou M J, Lee B J 2005 IEEE Photonics Technol. Lett. 17 1041
[2] Windisch R, Rooman C, Meinlschmidt S, Kiesel P, Zipperer D, Dohler G H, Drtta B, Kuijk M, Borghs G, Heremans P 2001 Appl. Phys. Lett. 79 2315
[3] Yamakoshi S, Hasegawa O, Hamaguchi H, Abe M, Yamaoka T 1977 Appl. Phys. Lett. 31 627
[4] Chitnis A, Sun J, Mandavilli V, Pachipulusu R, Wu S, Gaevski M, Adivarahan V, Zhang J P, Khan M A, Sarua A, Kubal M 2002 Appl. Phys. Lett. 81 3491
[5] Cao X A, LeBoeuf S F, Rowland L B, Yan C H, Liu H 2003 Appl. Phys. Lett. 82 3614
[6] Pavei M, Manfredi M, Salviati G, Armani N, Rossi F, Meneghesso G, Levada S, Zanoni E, Du S, Eliashevich I 2004 Appl. Phys. Lett. 84 3403
[7] Chang S J, Chang C S, Su Y K 1997 IEEE Photon. Technol. Lett. 9 1822184
[8] Sugawara H, Itaya K, Hatakoshi G 1994 Jpn J. Appl. Phys. 33 619526198
[9] Chen Y X, Zheng W H, Chen W, Chen L H, Tang Y D, Shen G D 2010 Acta Phys. Sin. 59 8083 (in Chinese) [陈依新, 郑婉华, 陈薇, 陈良惠, 汤益丹, 沈光地2010 59 8083]
[10] Yan L J, Sheu J K, Wen W C, Liao T F, Tsai M J, Chang C S 2008 IEEE Photon. Techn. Lett. 20 1724
[11] Hofler G E, Vanderwater D A, DeFevere D C 1996 Appl. Phys. Lett. 69 8032805
[12] Chang S J, Sheu J K, Su Y K 1996 Jpn. J Appl. Phys. 35 419924202
[13] Sugawara H, Ishikawa M, Yoshihiro N, Nishikawa Y, Naritsuka S 1991 U. S. Patent 5 048 035[1991-09-10]
[14] Liu E K, Zhu B S, Luo J S 2008 The Physics of Semi-conductor (Beijing: National Defense Industry Press) p70 (in Chinese) [刘恩科, 朱秉升, 罗晋升 2008 半导体物理学 (北京电子工业出版社)第70页]
[15] Schubert E F 2006 Light-emitting diodes (Cambridge University Press) p54
[16] Chen Y X, Shen G D, Gao Z Y, Guo W L, Zhang G C, Han J, Zhu Y X 2011 Acta Phys. Sin. 60 087206 (in Chinese) [陈依新, 沈光地, 高志远, 郭伟玲, 张光沉, 韩军, 朱彦旭 2011 60 087206]
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[1] Lee Y J, Tseng H C, Kuo H C, Wang S C, Chang C W, Hsu T C, Yang Y L, Hsieh M H, Jou M J, Lee B J 2005 IEEE Photonics Technol. Lett. 17 1041
[2] Windisch R, Rooman C, Meinlschmidt S, Kiesel P, Zipperer D, Dohler G H, Drtta B, Kuijk M, Borghs G, Heremans P 2001 Appl. Phys. Lett. 79 2315
[3] Yamakoshi S, Hasegawa O, Hamaguchi H, Abe M, Yamaoka T 1977 Appl. Phys. Lett. 31 627
[4] Chitnis A, Sun J, Mandavilli V, Pachipulusu R, Wu S, Gaevski M, Adivarahan V, Zhang J P, Khan M A, Sarua A, Kubal M 2002 Appl. Phys. Lett. 81 3491
[5] Cao X A, LeBoeuf S F, Rowland L B, Yan C H, Liu H 2003 Appl. Phys. Lett. 82 3614
[6] Pavei M, Manfredi M, Salviati G, Armani N, Rossi F, Meneghesso G, Levada S, Zanoni E, Du S, Eliashevich I 2004 Appl. Phys. Lett. 84 3403
[7] Chang S J, Chang C S, Su Y K 1997 IEEE Photon. Technol. Lett. 9 1822184
[8] Sugawara H, Itaya K, Hatakoshi G 1994 Jpn J. Appl. Phys. 33 619526198
[9] Chen Y X, Zheng W H, Chen W, Chen L H, Tang Y D, Shen G D 2010 Acta Phys. Sin. 59 8083 (in Chinese) [陈依新, 郑婉华, 陈薇, 陈良惠, 汤益丹, 沈光地2010 59 8083]
[10] Yan L J, Sheu J K, Wen W C, Liao T F, Tsai M J, Chang C S 2008 IEEE Photon. Techn. Lett. 20 1724
[11] Hofler G E, Vanderwater D A, DeFevere D C 1996 Appl. Phys. Lett. 69 8032805
[12] Chang S J, Sheu J K, Su Y K 1996 Jpn. J Appl. Phys. 35 419924202
[13] Sugawara H, Ishikawa M, Yoshihiro N, Nishikawa Y, Naritsuka S 1991 U. S. Patent 5 048 035[1991-09-10]
[14] Liu E K, Zhu B S, Luo J S 2008 The Physics of Semi-conductor (Beijing: National Defense Industry Press) p70 (in Chinese) [刘恩科, 朱秉升, 罗晋升 2008 半导体物理学 (北京电子工业出版社)第70页]
[15] Schubert E F 2006 Light-emitting diodes (Cambridge University Press) p54
[16] Chen Y X, Shen G D, Gao Z Y, Guo W L, Zhang G C, Han J, Zhu Y X 2011 Acta Phys. Sin. 60 087206 (in Chinese) [陈依新, 沈光地, 高志远, 郭伟玲, 张光沉, 韩军, 朱彦旭 2011 60 087206]
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