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以多孔聚丙烯(PP)膜为原材料, 通过压缩气体膨化工艺和电晕极化方法成功制备出PP压电驻极体膜, 并研究了该功能膜的压电和声学性能. 结果表明PP压电驻极体膜厚度方向和横向的杨氏模量分别为1.4和480 MPa, 因此压电系数d33比d31和d32高2个量级以上, d33是该类压电膜压电效应的主要性能指标, 而 d31和d32可以忽略不计. PP压电驻极体膜的准静态压电系数d33在15-35 kPa的压强范围内具有良好的线性度. 在2-300 Hz的测试频率范围内, 300 Hz 下的d33是2 Hz下的81%, 这主要是由PP膜的杨氏模量随频率增大而增强引起的. 在100 Hz-100 kHz 的音频和超声波频率范围内, PP压电驻极体膜具有平坦的频响曲线; 在1 kHz下其开路电压灵敏度和压电系数d33分别为0.85 mV/Pa和164 pC/N.Piezoelectrets are made from cellular polypropylene(pp)foam sheets by using a pressed-gas expansion followed by corona charging process. The elastic modulus, piezoelectricity and the acoustic response of such fabricated films are investigated. The results show that the Youngs modulus in the thickness direction is more than two orders of magnitude higher than those in the transverse directions. The d33 coefficient remains linear in an applied pressure range from 15 to 35 kPa. As measuring frequency increases from 2 to 300 Hz, d33 coefficient decreases to 81%, which is probably associated with the enhancement of elastic modulus of the film with pressure increasing. In a range from 100 Hz to 100 kHz, the PP piezoelectric films exhibit flat frequency response curves. The open circuit voltage sensitivity and d33 coefficient at 1 kHz are 0.84 mV/Pa and 164 pC/N, respectively.
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Keywords:
- polypropylene piezoelectrets /
- piezoelectricity /
- acoustic response
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[3] Bauer S, Gerhard-Multhaupt R, Sessler G M 2004 Phys. Today 57 37
[4] Lindner M, Hoislbauer H, Schödiauer R, Bauer-Gogonea S, Bauer S 2004 IEEE Trans. Dielectr. Electr. Insul. 11 255
[5] Zhang X, Hillenbrand J, Sessler G M 2004 Appl. Phys. Lett. 85 1226
[6] Zhang X Q, Huang J F, Wang F P, Xia Z F, 2008 Acta Phys. Sin. 52 1902 (in Chinese) [张晓青, 黄金峰, 王飞鹏, 夏钟福 2008 52 1902]
[7] Zhang P F, Xia Z F, Qiu X L, Wang F P, Wu X Y 2006 Acta Phys. Sin. 55 904 (in Chinese) [张鹏锋, 夏钟福, 邱勋林, 王飞鹏, 吴贤勇 2006 55 904]
[8] Zhang X, Hillenbrand J, Sessler G M, Haberzettl S, Lou K 2012 Appl. Phys. A 107 621
[9] You Q, Lou K, Zhang X, Zhang Y 2011 Proceedings of the 2011 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (USA NJ: IEEE Operations Center) p395
[10] Graz I, Kaltenbrunner M, Keplinger C, Schwödiauer R, Bauer S, Lacour S P, Wagner S 2006 Appl. Phys. Lett. 89 073501
[11] Hillenbrand J, Sessler G M 2004 J. Acoust. Soc. Am. 116 3267
[12] Kressmann R 2004 J. Acoust. Soc. Am. 109 1412
[13] Zhang X, Hillenbrand J, Sessler G M 2004 J. Phys. D: Appl. Phys. 37 2146
[14] Mellinger A 2003 IEEE Trans. Dielectr. Electrl. Insul. 10 842
[15] Kressmann R 2001 J. Appl. Phys. 90 3489
[16] Sessler G M, Hillenbrand J 1999 Appl. Phys. Lett. 75 3405
[17] Wan Y, Xie L, Lou K, Zhang X, Zhong Z 2012 J. Mech. Phys. Sol. 60 1310
[18] Lagakos N, Jarzynski J, Cole J H, Bucaro J A 1986 J. Appl. Phys. 59 4017
[19] Gibson L J, Ashby M F 1997 Cellular Solids (London: Cambridge University Press)
[20] Zhang X, Hillenbrand J, Sessler G M 2007 J. Appl. Phys. 101 054114
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[1] Klempner D, Frisch K C 1991 Handbook of Polymeric Foams and Foam Technology (Muchen: Hanser Publisher)
[2] Lekkala J, Poramo R, Nyholm K, Kaikkonen T 1996 Med. Biol. Eng. Comput. 34 67
[3] Bauer S, Gerhard-Multhaupt R, Sessler G M 2004 Phys. Today 57 37
[4] Lindner M, Hoislbauer H, Schödiauer R, Bauer-Gogonea S, Bauer S 2004 IEEE Trans. Dielectr. Electr. Insul. 11 255
[5] Zhang X, Hillenbrand J, Sessler G M 2004 Appl. Phys. Lett. 85 1226
[6] Zhang X Q, Huang J F, Wang F P, Xia Z F, 2008 Acta Phys. Sin. 52 1902 (in Chinese) [张晓青, 黄金峰, 王飞鹏, 夏钟福 2008 52 1902]
[7] Zhang P F, Xia Z F, Qiu X L, Wang F P, Wu X Y 2006 Acta Phys. Sin. 55 904 (in Chinese) [张鹏锋, 夏钟福, 邱勋林, 王飞鹏, 吴贤勇 2006 55 904]
[8] Zhang X, Hillenbrand J, Sessler G M, Haberzettl S, Lou K 2012 Appl. Phys. A 107 621
[9] You Q, Lou K, Zhang X, Zhang Y 2011 Proceedings of the 2011 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (USA NJ: IEEE Operations Center) p395
[10] Graz I, Kaltenbrunner M, Keplinger C, Schwödiauer R, Bauer S, Lacour S P, Wagner S 2006 Appl. Phys. Lett. 89 073501
[11] Hillenbrand J, Sessler G M 2004 J. Acoust. Soc. Am. 116 3267
[12] Kressmann R 2004 J. Acoust. Soc. Am. 109 1412
[13] Zhang X, Hillenbrand J, Sessler G M 2004 J. Phys. D: Appl. Phys. 37 2146
[14] Mellinger A 2003 IEEE Trans. Dielectr. Electrl. Insul. 10 842
[15] Kressmann R 2001 J. Appl. Phys. 90 3489
[16] Sessler G M, Hillenbrand J 1999 Appl. Phys. Lett. 75 3405
[17] Wan Y, Xie L, Lou K, Zhang X, Zhong Z 2012 J. Mech. Phys. Sol. 60 1310
[18] Lagakos N, Jarzynski J, Cole J H, Bucaro J A 1986 J. Appl. Phys. 59 4017
[19] Gibson L J, Ashby M F 1997 Cellular Solids (London: Cambridge University Press)
[20] Zhang X, Hillenbrand J, Sessler G M 2007 J. Appl. Phys. 101 054114
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