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为了研究碳纳米管薄膜的强流脉冲发射特性, 采用酞菁铁高温热解方法在机械抛光铜基底上直接生长了碳纳米管薄膜 (Cu-CNTs), Cu-CNTs生长方向各异. 在20 GW脉冲功率源系统中采用二极结构对Cu-CNTs的强流脉冲发射特性进行研究, 研究结果表明: 在单脉冲发射条件下, 随脉冲电场峰值的增大, Cu-CNTs薄膜的发射电流峰值呈线性增加, 当宏观场强为15.5 V/μ时, 发射脉冲电流的峰值可达到5.56 kA, 对应的发射电流密度0.283 kA/cm2, 当宏观场强达到32.0 V/μ时, 发射脉冲电流的峰值可达到18.19 kA, 对应的发射电流密度0.927 kA/cm2, 发射电流能力明显优于已有报道. 在相同峰值, 连续多脉冲情况下, 碳纳米管薄膜具有良好的发射可重复性, 且发射性能稳定.In order to study intense pulsed emission characteristics of carbon nanotube films (CNTs), CNTs were synthesized on the surface of Cu substrate (Cu-CNTs) by pyrolysis of iron phthalocyanine (FePc). Orientations of CNTs obtained are different from one another. Intense pulsed field emission of CNTs was measured on the 20GW pulse power system using a diode structure. For single pulse emission, the emission current peak of Cu-CNTs increases linearly with pulse field peak, at the applied peak electric field of ～15.5 V/μ; the current peak is ～5.56 kA, and equivalent emission current density is ～0.283 kA/cm2. At the applied peak electric field of ～32.0 V/μ, the current peak can achieve ～18.19kA, and the equivalent emission current density is～0.927 kA/cm2; the ability of emission current of CNTs is obviously better than that reported. In many continuous and similar peak pulse emissions, Cu-CNTs provide with good repeatability of pulsed emission, and present better emission stability.
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Keywords:
- intense pulsed emission /
- carbon nanotubes /
- copper substrate /
- stability
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[1] Iijima S 1991 Nature 354 56
[2] Yang D J, Wang S G, Zhang Q, Sellin P J, Chen G 2004 Phys. Lett. A 329 207
[3] Novak J P, Lay M D, Perkins F K, Snow E S 2004 Solid-State Ele. 48 1753
[4] Tsukagoshi K, Yoneya N, Uryu S, Aoyagi Y, Kanda A, Ootuka Y, Alphenaar B W 2002 Phys. B Condensed Matter 323 107
[5] Fennimore A M 2007 Nature 424 408
[6] Kawakita K, Hata K, Sato H, Saito Y 2006 J. Vac. Sci. Technol. B 24 950
[7] Teo K B K, Minoux E, Hudanski L, Peauger F, Schnell J P, Gangloff L, Legagneux P, Dieumegard D, Amaratunga G A J, Milne W I 2005 Nature 437 968
[8] Bonard J M, Dean K A, Coll B F, Klinke C 2002 Phys. Rev. Lett. 89 7602
[9] Seelaboyina R, Huang J, Choi W B2006 Appl. Phys. Lett. 88 194104
[10] Ma H L, Zhang X Y, Qiao S Z, Zhang R, Zeng F G, Xia L S 2012 Advanced Materials Research 586 130
[11] Zeng F G, Li X, Liu W H, Qiao S Z, Ma H L, Zhang R, Xia L S, Chen Y, Liu X G, Zhang H 2011 Chinese Sci Bull. 56 2379
[12] Miao Q L, Zhang Y, Xia L S, Huang Y H, Qi J J, Gao Z J, Zhang H 2007 Acta Phys. Sin. 56 5335 (in Chinese) [廖庆亮, 张跃, 夏连胜, 黄运华, 齐俊杰, 高战军, 张篁 2007 56 5335]
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[14] Zeng F G, Li X, Liu W H, Qiao S Z, Ma H L, Zhang R, Xia L S, Xia L S, Chen Y, Liu X G, Zhang H 2012 Chinese Sci. Bull. 57 1739
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