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本文针对低少子寿命铸造多晶硅片进行试验, 通过一种将多温度梯度磷扩散吸杂工艺与低温退火工艺结合的新型低温退火吸杂工艺, 去除低少子寿命多晶硅片中影响其电性能的Fe杂质及部分晶体缺陷, 提高低少子寿命多晶硅所生产的太阳电池各项电性能. 通过低温退火磷扩散吸杂工艺与其他磷扩散吸杂工艺的比较, 证明了低温退火吸杂工艺具有更好的磷吸杂和修复晶体缺陷的作用. IV-measurement发现经过低温退火工艺处理后的低少子寿命多晶硅, 制备的太阳电池光电转换效率比其他实验组高0.2%, 表明该工艺能有效地提高低少子寿命多晶硅太阳电池各项电性能参数及电池质量. 本研究结果表明新型低温退火磷吸杂工艺可将低少子寿命硅片应用于大规模太阳电池生产中, 提高铸造多晶硅材料在太阳能领域的利用率, 节约铸造多晶硅的生产成本.A new low-temperature annealing phosphorous gettering process (LTAPGP) was developed to improve the electrical properties of multi-crystalline silicon which has a low minority carrier lifetime. LTAPGP combined a multi-plateau temperature phosphorous gettering process and a low-temperature annealing process. LTAPGP can remove the iron impurities and crystallographic defects of multi-crystalline silicon, and improve the electrical properties of silicon solar cells that were produced from low minority carrier lifetime silicon wafers. Compared with multi-plateau and two-plateau temperature phosphorous gettering process, LTAPGP was more effective in gettering iron impurities and repairing crystallographic defects. The multi-crystalline silicon wafers with a low minority carrier lifetime went through an LTAPGP process were utilized to produce solar cells. The IV-measurement data prove that the efficiency of the new solar cells is 0.2% higher than that of specimens subject to the multi-plateau and two-plateau temperature processes. The results indicat that LTAPGP can make the low minority carrier lifetime silicon wafers to be used in solar cell industry, improve the utilization ratio and reduce the production cost of cast polysilicon.
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Keywords:
- low-temperature annealing /
- phosphorous gettering /
- low minority carrier lifetime silicon /
- solar cell
[1] Deng H, Yang D R, Tan J, Xi Z Q, Que D L 2007 Acta Energi. 28 2 (in Chinese) [邓海, 杨德仁, 唐骏, 席珍强, 阙端麟 2005 太阳能学报 28 2]
[2] Shi X B, Xu Z Q, Shi Z R, Zhu T, Wang Y 2006 Journal of Sothern Yangtze University (Natural Science Edition) 5(6) (in Chinese) [石湘波, 许志强, 施正荣, 朱拓 2006 江南大学学报 5 6]
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[46] Jha A Solar cell technology and applications 2009: Auerbach Publications
[47] -
[1] Deng H, Yang D R, Tan J, Xi Z Q, Que D L 2007 Acta Energi. 28 2 (in Chinese) [邓海, 杨德仁, 唐骏, 席珍强, 阙端麟 2005 太阳能学报 28 2]
[2] Shi X B, Xu Z Q, Shi Z R, Zhu T, Wang Y 2006 Journal of Sothern Yangtze University (Natural Science Edition) 5(6) (in Chinese) [石湘波, 许志强, 施正荣, 朱拓 2006 江南大学学报 5 6]
[3] [4] [5] Min J, Li J H 1995 Research Progress of SSE 15 3 (in Chinese) [闵靖, 陈一, 宗祥福 1995 固体电子学研究与进展 15 3]
[6] [7] Ji X B, Zhou Q G, Liu B, Xu J 2009 Chinese J. Rare Metals 32 6 (in Chinese) [籍小兵, 周旗钢, 刘 斌, 徐继平 2009 稀有金属 32 6]
[8] Seidel T, Meek R, Cullis A 1975 J. Appl. Phys. 46 2
[9] [10] [11] Tan J, Cuevas A, Macdonald D, Trupke T, Bardos R, Roth K 2008 Prog Photovoltaics 16 2
[12] [13] Shabani M B, Yamashita T, Morita E. 2008 Solid State Phenom 131
[14] Prichaud I 2002 Sol. Energ. Mat. Sol. C 72 1
[15] [16] Khedher N, Hajji M, Hassen M, Ben Jaballah A, Ouertani B, Ezzaouia H, Bessais B, Selmi A, Bennaceur R 2005 Sol. Energ. Mat. Sol. C 87 1
[17] [18] [19] Chen J X, Xi Z Q, Wu D D, Yang D R 2007 Acta Energi 28 2
[20] Pletzer T, Stegemann E, Windgassen H, Suckow S, Btzner D, Kurz H. 2011 Prog Photovoltaics 19 8
[21] [22] Shockley W 1952 Proceedings of the IRE 40 11
[23] [24] [25] Hall R N 1952 Physical Review 87 2
[26] [27] Krain R, Herlufsen S, Schmidt J 2008 Appl. Phys. Lett. 93
[28] Geranzani P, Pagani M, Pello C, Borionetti G 2002 Internal gettering in silicon: experimental and theoretical studies based on fast and slow diffusing metals Scitec Publications; 1999 p381-386
[29] [30] [31] Istratov A A, Vinl H, Huber W, Weber E R 2005 Semiconductor Science and Tech 20
[32] Istratov A A, Hieslmair H, Weber E 1999 Appl. Phys. A-Mater 69 1
[33] [34] [35] Istratov A A, Hieslmair H, Weber E 2000 Appl. Phys. A-Mater 70 5
[36] Komatsu Y, Galbiati G, Lamers M, Venema P, Harris M, Stassen A F, Meyer C, van den Donker M, Weeber A 2009 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany., 2009, 1063-1067
[37] [38] Komatsu Y, Koorn M, Vlooswijk A H G, Venema P R, Stassen A F 2011 Energy Procedia 8
[39] [40] Manshanden P, Geerligs L 2006 Sol. Energ. Mat. Sol. C 90 7
[41] [42] [43] Nelson J 2003 The physics of solar cells Vol.57 2003: World Scientific.
[44] [45] Green M A 1982 Englewood Cliffs, NJ, Prentice-Hall, Inc., 1982. 288 p1
[46] Jha A Solar cell technology and applications 2009: Auerbach Publications
[47]
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