直拉单晶硅中洁净区形成后铜沉淀行为的研究

张光超; 徐进

doi:10.7498/aps.62.076103

摘要

本文研究了直拉单晶硅中形成洁净区后过渡族金属杂质铜的沉淀行为. 样品经过高低高三步常规热处理形成洁净区后, 在不同温度下引入杂质铜, 然后对样品分别进行普通热处理和快速热处理, 通过腐蚀和光学显微镜研究发现, 在700 ℃引入铜杂质后经过普通热处理和快速热处理都不会破坏洁净区, 在900 ℃和1100 ℃引入铜杂质后经过普通热处理不会破坏洁净区, 而经过快速热处理会破坏洁净区. 研究表明, 快速热处理可以使硅片体内产生大量的空位, 空位的外扩散是破坏洁净区的主要原因.

关键词:

直拉单晶硅 /
铜沉淀 /
洁净区

Abstract

The precipitation behavior of copper in denuded zone (DZ) of Czochralski silicon has been systematically investigated by means of etching and optical microscopy (OM). Firstly, the samples were treated in a conventional furnace by high-low-high annealing for the formation of denuded zone. Subsequently, copper contamination was introduced at different temperatures. Finally, samples were treated with rapid thermal annealing (RTA) and conventional furnace annealing separately. It was found that, copper precipitates could be observed in DZ through OM only in the samples which experienced RTA followed by contamination in 900 ℃ and 1100 ℃. This indicates that the out-diffusion of vacancy which is produced in the process of RTA is the main cause for the copper precipitation in DZ.

Keywords:

作者及机构信息

张光超¹,
徐进^1,2

1.
厦门大学材料学院, 厦门 361005;

2.
浙江大学硅材料国家重点实验室, 杭州 310027

基金项目: 国家自然科学基金 (批准号: 50902116)、硅材料国家重点实验室开放基金(批准号: SKL2012-17)和福建省高等学校新世纪优秀人才支持计划资助的课题.

Authors and contacts

Zhang Guang-Chao¹,
Xu Jin^1,2

1.
College of Materials, Xiamen University, Xiamen 361005, China;

2.
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 50902116), the Opening Project of State Key Laboratory of Silicon Materials (Grant No. SKL2012-17), and the Prgram for New Century Excellent Talents in Fujian Province University.

参考文献

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施引文献

[1]	ThomPson S, Parthasarathy S 2006 MaterialsThday 9 20
[2]	Liu B C, Huang T Y 2006 China Materials Engineering Dictionary (Vol. 11) (beijing: Chemical Industry Press) p116-119 (in Chinese) [柳百成, 黄天佑 2006 中国材料工程大典(11 卷) (北京: 化学工业出版社) 第116–119页]
[3]	Bergholz W, Gilles D 2000 Phys. Stat. Sol. (b) 5 222
[4]	Shimura F, Willardson R K 1994 Academic Press 41
[5]	Isomae S, Aoki S, Watanabe K 1983 J. Appl. Phys. Lett. 55 817
[6]	Broniatowski A 1989 Phys. Rev. Lett. 62 3074
[7]	Davis J R, Rohatgi A 1980 J. Cryst. Growth. 75 67
[8]	Bains S K, Griffiths D P, Wilkes J G, Series R W, Barraclough K G 1990 J. Electrochem. Soc. 137 647
[9]	Hamet J F, Abdelaoui R, Nouet G 1990 J. Appl. Phys. 68 638
[10]	Xu J, Li F L, Yang D R 2007 Acta Phy. Sin. 4113 56 (in Chinese) [徐进, 李福龙, 杨德仁 2007 56 4113]
[11]	Zhu X, Yang D R, Li M, Chen T, Wang L, Que D L 2008 Chin. Phys. Lett. 25 651
[12]	Seibt M, Griess M, Istraov A A, Hedemann H, Sattler A 1998 Phys. Stat. Sol. (a) 166 171
[13]	Istratov A A, Weber E R 1998 Appl. Phys. A 66 123
[14]	Sachdeva R, Istratov A A, Weber E R 2001 Appl. Phys. Lett. 79 2937
[15]	Istratov A A, Weber E R 2002 J. Electrochem. Soc. 79 2397
[16]	Goetzberger A, Shockley W 1960 J. Appl. Phys. 31 1821
[17]	Miyazaki M, Sano M, Sumita S, Fujino N 1991 Jpn. J. Appl. Phys. 30 L295
[18]	Honda K, Ohsawa A, Toyokura N 1984 Appl. Phys. Lett. 45 270
[19]	Hiramoto K, Sano M, Sadamitsu S, Fujino N 1989 Jpn. J. Appl. Phys. 28 L2109
[20]	Wendt H, Cerva H, Lehmann V, Pamler W 1989 J. Appl. Phys. 65 2402
[21]	Istratov A A, Flink C, Hieslmair H 2000 Mater. Sci. Eng. B 72 99
[22]	Andrei A, Istratov A A, Weber E R 2002 J. Electrochem. Soc. G21 149
[23]	Xi Z Q, Yang D R, Xu J 2003 Appl. Phys. Lett. 83 3048
[24]	Istratova A A, Weber E R 1998 Appl. Phys. A: Mater. Sci. Pro. A66 123
[25]	Tan T Y, Gardner E E, Tice W K 1977 Appl. Phys. Lett. 30 175
[26]	Nakamura K, Saishoji T, Kubota T, Iida T, Shimanuki Y, Kotooka T 1997 J. Cryst. Growth. 180 31
[27]	Frewen T A, Sinno T 2006 Appl. Phys. Lett. 89 191903
[28]	Strunk H, Gosele U, Kolbesen B O 1979 Appl. Phys. Lett. 34 530
[29]	Cristiano F, Grisolia J, Colombeau B 2000 J. Appl. Phys. 87 8420
[30]	Wang Y Z, Wang N T, Ji C, Zhang G C, Xu J 2012 Acta Phy. Sin. 61 016105 (in Chinese) [王永志, 王娜婷, 吉川, 张光超, 徐进 2012 61 016105]

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