InGaAs薄膜表面的粗糙化过程

罗子江; 周勋; 王继红; 郭祥; 张毕禅; 周清; 刘珂; 丁召

doi:10.7498/aps.62.036802

摘要

采用STM分析InGaAs表面形貌演变研究InGaAs表面的粗糙化和预粗糙化等相变过程, 特别针对In0.15Ga0.85As薄膜表面预粗糙化过程进行了深入研究. 发现In0.15Ga0.85As薄膜在不同的衬底温度和As等效束流压强下表现出不同的预粗糙化过程. 在低温低As等效束流压强下, 薄膜表面将经历从有序平坦到预粗糙并演变成粗糙的过程, 起初坑的形成是表面形貌演变的主要形式, 随着退火时间的延长, 大量坑和岛的共同形成促使表面进入粗糙状态; 在高温高As等效束流压强下薄膜表面将率先形成小岛, 退火时间延长后小岛逐渐增加并最终达到平衡态, 表面形貌将长期处于预粗糙状态.

关键词:

InGaAs 薄膜 /
粗糙化 /
预粗糙化

Abstract

Roughening and pre-roughening processes on InGaAs surface are studied using scanning tunneling microscopy. There are different roughening and pre-roughening processes for InGaAs films at different substrate temperatures and As beam equivalent pressure. Under low temperature and low As beam equivalent pressure, pits is main mechanism in the beginning of InGaAs morphology evolution, with the increase of annealing time, a great number of pits and islands are observed which make the surface rough. Small islands should play a leading role during the InGaAs morphology evolution at high temperature and high As beam equivalent pressure, and the number of islands will increase gradually with the increase of annealing time till it reaches an equilibrium state.

Keywords:

作者及机构信息

1.
贵州大学理学院, 贵阳 550025;

2.
贵州财经大学教育管理学院, 贵阳 550004;

3.
贵州师范大学物理与电子科学学院, 贵阳 550001

基金项目: 国家自然科学基金(批准号: 60866001)、教育部博士点基金(批准号: 20105201110003)、贵州省优秀科技教育人才省长专项基金(批准号: 黔省专合字(2009)114号)、贵州省科学技术基金(批准号: 黔科篔字[2011]2095号)、贵州省留学人员科技项目(批准号: Z103233)和贵州财经大学2010博士基金资助的课题.

Authors and contacts

1.
College of Science, Guizhou University, Guiyang 550025, China;

2.
School of Education Administration, Guizhou University of Finance and Economics, Guiyang 550004, China;

3.
School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60866001), Specialties Doctor Degree Foundation of Ministry of Education of China (Grant No. 20105201110003), the Governor' Foundation for Science and Education Elites of Guizhou Province, China (Grant No. (2009)114), the Science-Technology Foundation of Guizhou Province of China (Grant No. (2011)2095), the Foundation for Oversea Elites of Guizhou Province of China (Grant No. Z103233) and the Foundation for Doctoral students of Guizhou University of Finance and Economics of China (Grant No. 2010)

参考文献

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[2]	den Nijs M, Rommelse K 1987 Phys. Rev. B 40 4709
[3]	Ding Z, Bullock D W, Thibado P M, LaBella V P, Mullen K 2003 Surf. Sci. 540 491
[4]	Madelung O 1991 Semiconducting Group IV Elements and V/III Compound (Berlin: Spinger-Verlag) p60
[5]	Niu Z C, Zhou Z Q, Lin Y W, Li X F 1997 Acta Phys. Sin. 46 969 (in Chinese) [牛智川, 周增圻, 林耀望, 李新峰 1997 46 969]
[6]	Zhou H Z, Cheng M T, Xue Q K 2005 Acta Phys. Sin. 54 4141 (in Chinese) [周慧君, 程木田, 薛其坤 2005 54 4141]
[7]	Wang B R, Sun Z, Xu Z Y, Sun B Q, Ji Y 2008 Acta Phys. Sin. 57 1908 (in Chinese) [王宝瑞, 孙征, 徐仲英, 孙宝权, 姬扬 2008 57 1908]
[8]	Sears L E 2009 Ph. D. Dissertation (Michigan: Michigan University, USA)
[9]	Zhou X, Yang Z R, Luo Z J, He Y Q, He H, Ding Z 2011 Acta Phys. Sin. 60 016109 (in Chinese) [周勋, 杨再荣, 罗子江, 贺业全, 何浩, 丁召 2011 60 016109]
[10]	Luo Z J, Zhou X, Yang Z R, He Y Q, He H, Ding Z 2010 J. Funct. Mater. 41 704 (in Chinese) [罗子江, 周勋, 杨再荣, 贺业全, 何浩, 丁召 2010 功能材料 41 704]
[11]	Luo Z J, Zhou X, Yang Z R, He Y Q, He H, Ding Z 2011 J. Funct. Mater. 42 816 (in Chinese) [罗子江, 周勋, 杨再荣, 贺业全, 何浩, 丁召 2011 功能材料 42 816]
[12]	Zhang B C, Zhou X, Luo Z J, Ding Z 2012 Chin. Phys. B 21 048101
[13]	Priester C, Lannoo M 1995 Phys. Rev. Lett. 75 93
[14]	Slanina F, Krug J, Kotrla M 2005 Phys. Rev. E 71 041605
[15]	Sato M 2011 Phys. Rev. E 84 061604
[16]	Riposan A, Martin G K M, Millunchik J M 2003 Appl. Phys. Lett. 83 4518
[17]	Pamplin B R 1975 Crystal Growth (Oxford: Pergamum Press) p22
[18]	Zhou X, Luo Z J, Ding Z 2012 Chin. Phys. B 21 046103
[19]	Ding Z, Bullock D W, Oliver W F, Thibado P M, LaBella V P 2003 J. Crystal Growth 251 35
[20]	LaBella V P, Bullock D W, Anser M, Ding Z, Thibado P M 2000 Phys. Rev. Lett. 84 4152

施引文献

[1]	den Nijs M 1990 Phys. Rev. Lett. 64 435
[2]	den Nijs M, Rommelse K 1987 Phys. Rev. B 40 4709
[3]	Ding Z, Bullock D W, Thibado P M, LaBella V P, Mullen K 2003 Surf. Sci. 540 491
[4]	Madelung O 1991 Semiconducting Group IV Elements and V/III Compound (Berlin: Spinger-Verlag) p60
[5]	Niu Z C, Zhou Z Q, Lin Y W, Li X F 1997 Acta Phys. Sin. 46 969 (in Chinese) [牛智川, 周增圻, 林耀望, 李新峰 1997 46 969]
[6]	Zhou H Z, Cheng M T, Xue Q K 2005 Acta Phys. Sin. 54 4141 (in Chinese) [周慧君, 程木田, 薛其坤 2005 54 4141]
[7]	Wang B R, Sun Z, Xu Z Y, Sun B Q, Ji Y 2008 Acta Phys. Sin. 57 1908 (in Chinese) [王宝瑞, 孙征, 徐仲英, 孙宝权, 姬扬 2008 57 1908]
[8]	Sears L E 2009 Ph. D. Dissertation (Michigan: Michigan University, USA)
[9]	Zhou X, Yang Z R, Luo Z J, He Y Q, He H, Ding Z 2011 Acta Phys. Sin. 60 016109 (in Chinese) [周勋, 杨再荣, 罗子江, 贺业全, 何浩, 丁召 2011 60 016109]
[10]	Luo Z J, Zhou X, Yang Z R, He Y Q, He H, Ding Z 2010 J. Funct. Mater. 41 704 (in Chinese) [罗子江, 周勋, 杨再荣, 贺业全, 何浩, 丁召 2010 功能材料 41 704]
[11]	Luo Z J, Zhou X, Yang Z R, He Y Q, He H, Ding Z 2011 J. Funct. Mater. 42 816 (in Chinese) [罗子江, 周勋, 杨再荣, 贺业全, 何浩, 丁召 2011 功能材料 42 816]
[12]	Zhang B C, Zhou X, Luo Z J, Ding Z 2012 Chin. Phys. B 21 048101
[13]	Priester C, Lannoo M 1995 Phys. Rev. Lett. 75 93
[14]	Slanina F, Krug J, Kotrla M 2005 Phys. Rev. E 71 041605
[15]	Sato M 2011 Phys. Rev. E 84 061604
[16]	Riposan A, Martin G K M, Millunchik J M 2003 Appl. Phys. Lett. 83 4518
[17]	Pamplin B R 1975 Crystal Growth (Oxford: Pergamum Press) p22
[18]	Zhou X, Luo Z J, Ding Z 2012 Chin. Phys. B 21 046103
[19]	Ding Z, Bullock D W, Oliver W F, Thibado P M, LaBella V P 2003 J. Crystal Growth 251 35
[20]	LaBella V P, Bullock D W, Anser M, Ding Z, Thibado P M 2000 Phys. Rev. Lett. 84 4152

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