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采用射频共溅射方法制备了FexZn1-xO (x=0.80, 0.86, 0.93)非晶薄膜, 该薄膜具有较强的室温铁磁性, 制备态的Fe0.93Zn0.07O 的饱和磁化强度Ms可达333.29 emu/cm3, 磁性能是各向同性的. 与多晶的FexZn1-xO (x≤ 20%)不同的是样品出现了明显的异常霍尔效应(AHE), 样品均为n型半导体, 载流子浓度约为1019—1020 cm-3. 退火后的样品在低温222 K 下存在着电阻极小值现象. 薄膜的低温电阻导电机理属于自旋依赖的电子变程跃迁机理, 上述实验结果表明高Fe含量的非晶FeZnO体系有作为新型自旋电子学器件材料的可能.The FexZn1-xO (x=0.80, 0.86, 0.93)amorphous films were fabricated by RF sputtering method. The films each have a strong ferromagnetism at room temperature. The saturation magnetization Ms can reacl 333.29 emu/cm3 in the as-sputtered Fe0.93Zn0.07O. Magnetism is isotropic. The sample obviously exhibits an anomalous Hall effect, which is different from the polycrystalline FexZn1-xO (x≤ 20%). The samples are of n-type semiconductor, with a carrier concentration of about 1019—1020 cm-3. After being annealed, the samples each present a resistance minimum phenomenon at a low temperature (222 K). The conductive mechanism is of the spin dependent variable range hopping resistance in the low-temperature. The experimental results show that amorphous FeZnO system of high Fe composition is a potential candidate of the new spintronic device materials.
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Keywords:
- amorphous FeZnO /
- anomalous Hall effect /
- magnetic semiconductor /
- spinpolarized transport
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[1] Ohno H 1998 Science 281 951
[2] Sato K, Bergqvist L, Kudrnovský J, Dederichs P H, Eriksson O, Turek I, Sanyal B, Bouzerar G, Katayama-Yoshida H, Dinh V A, Fukushima T, Kizaki H, Zeller R 2010 Rev. Mod. Phys. 82 1633
[3] Editorial Staff 2005 Science 309 82
[4] Dietal T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019
[5] Zener C 1951 Phys. Rev. 81 440
[6] Sato K, Yoshida H K 2000 Jpn. J. Appl. Phys. 39 L555
[7] Chambers S A 2006 Surf. Sci. Reports 61 345
[8] Pan F, Ding B F, Fa T, Cheng F F, Zhou Sh Q, Yao Sh D 2011 Acta. Phys. Sin. 60 108501 (in Chinese) [潘峰, 丁斌峰, 法涛, 成枫锋, 周生强, 姚淑德 2011 60 108501]
[9] Kataoka T, Kobayashi M, Sakamoto Y, Song G S, Fujimori A, Chang F H, Lin H J, Huang D J, Chen C T, Ohkochi T, Takeda Y, Okane T, Saitoh Y, Yamagami H, Tanaka A, Mandal S K, Nath T K, Karmakar D, Dasgupta I 2010 J. Appl. Phys. 107 033718
[10] Yoon S W, Cho S B, We S C, Yoon S, Suh B J 2003 J. Appl. Phys. 93 7879
[11] Shim J H, Hwang T, Lee S, Park J H, Han S J, Jeong Y H 2005 Appl. Phys. Lett. 86 082503
[12] Shinagawa T, Izaki M, Inui H, Murase K, Awakura Y 2005 J. ElectroChem. Soc. 152 G736
[13] Sato K, Yoshida H K 2001 Physica B 308-310 904
[14] Debernardi A, Fanciulli M 2011 Phys. Rev. B 84 024415
[15] Debernardi A, Fanciulli M 2007 Appl. Phys. Lett. 90 212510
[16] Deng B, Guo Zh Y, Sun H Q 2010 Appl. Phys. Lett. 96 172106
[17] Park M S, Min B I 2003 Phys. Rev. B 68 224436
[18] Yan Sh Sh, Mei L M, Chen Y X, Liu G L, Song H Q, Zhang Y P, Tian Y F, Qiao R M 2011 J. Shandong University (Natural Science) 46 81 (in Chinese) [颜世申, 梅良模, 陈延学, 刘国磊, 宋红强, 张云鹏, 田玉峰, 乔瑞敏 2011 山东大学学报(理学版) 46 81]
[19] Liu H J, Yao K, Yang P, Du Y H, He Q, Gu Y L, Li X L, Wang S S, Zhou X T, Wang J 2010 Phys. Rev. B 82 064108
[20] Wang Y X, Wang J, Li H H, Li R P, Guo Y X 2005 Acta. Phys. Sin. 54 5474 (in Chinese) [王雅新, 王劼, 李红红, 李锐鹏, 郭玉献 2005 54 5474]
[21] Liu X Ch, Chen Zh Zh, Shi E W, Liao D Q, Zhou K J 2011 Chin. Phys. B 20 037501
[22] Kapplus R, Luttinger J M 1954 Phys. Rev. 95 1154
[23] Lee W L, Watauchi S, Miller V L, Cava R J, Ong N P 2004 Science 303 1647
[24] Philip J, Punnoose A, Kim B I, Reddy K M, Layne S, Holmes J O, Satpati B, LeClair P R, Santos T S, Moodera J S 2006 Nat. Mater. 5 298
[25] Han S J, Song J W, Yang C H, Park S H, Park J H. Jeong Y H, Rhie K W 2002 Appl. Phys. Lett. 81 4212
[26] Wang F, Huang W W, Li Sh Y, Lian A Q, Zhang X T, Cao W 2012 J. Magn. Magn. Mater. for submitted
[27] Kittel C, translated by Xiang J Z, Wu X H 2005 Introduction to Solid State Physics (Beijing: Chemical Industry Press) p132 (in Chinese) [Kittel C 著, 项金钟, 吴兴惠译, 2005 固体物理学导论 (北京: 化学工业出版社) 第132页]
[28] Song C, Zeng F, Geng K W, Liu X J, Pan F, He B, Yan W S 2007 Phys. Rev. B 76 045215
[29] Song C, Zeng F, Shen Y X, Geng K W, Xie Y N, Wu Z Y, Pan F 2006 Phys. Rev. B 73 172412
[30] Coey J M D, Venkatesan M, Fitzgerald C B 2005 Nat. Mater. 4 173
[31] Anderson P W 1958 Phys. Rev. 109 1492
[32] Yan S S, Liu J P, Mei L M, Tian Y F, Song H Q, Chen Y X, Liu G L 2006 J. Phys. Condensed Matter 18 10469
[33] Tian Y F, Yan Sh Sh, Zhang Y P, Song H Q, Ji G, Liu G L, Chen Y X, Mei L M, Liu J P, Altuncevahir B, Chakka V 2006 J. Appl. Phys. 100 103901-1
[34] Huang K, revised by Hang R Q 1988 Solid State Physics (Beijing: Higher Education Press) p315 (in Chinese) [黄昆原著, 韩汝琦改编 1988 固体物理学 (北京: 高等教育出版社)第323页]
[35] Sun N K, Li Y B, Li D, Zhang Q, Du J, Xiong,D K, Zhang W S, Ma S, Liu J J, Zhang Z D 2007 Journal of Alloys and Compounds. 429 29
[36] Zhao B, Kaspar T C, Droubay T C, McCloy J, Bowden M E, Shutthanandan V, Heald S M, Chambers S A 2011 Phys. Rev. B 84 0245325
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