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研究磁性半导体中负磁电阻产生机理对正确理解载流子与磁性离子间的sp-d磁交换作用是非常重要的.通过变温(10300 K)磁输运和变温(5300 K)磁化率实验研究了一系列不同Mn含量非简并p型Hg1-xMnxTe单晶(x0.17)的负磁电阻和顺磁增强效应. 实验结果表明其负磁电阻与温度的关系和磁化率与温度的关系基本一致, 两者都包含一个呈指数型变化的温度函数exp(-K/T).根据磁性半导体的杂质能级理论, 非简并p型Hg1-xMnxTe单晶在低磁场范围内出现负磁电阻效应的主要物理机理 为外磁场的磁化效应使得受主杂质或受主型束缚磁极化子的有效电离能减小.It is important to study the mechanism of negative magnetoresistance (MR) in magnetic semiconductors for the correct understanding of the sp-d interactions between carriers and magnetic ions. In this work, temperature-dependent Hall effect (10300 K) and magnetic susceptibility (5300 K) are measured for the study of negative MR and paramagnetic enhancement of nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal. As temperature decreases, both negative MR and susceptibility show the same behaviors, each of which contains an exponentially changing temperature function \exp(-K/T). According to the theory of impurity energy level in semimagnetic semiconductor, magnetic field can lead to the spin-splitting of acceptor level and result in reducing the binding energy of acceptors, which is responsible mainly for the negative MR in nondegenerate p-type Hg1-xMnxTe monocrystal.
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Keywords:
- magnetic semiconductors /
- negative magnetoresistance /
- paramagnetic enhancement /
- spin splitting
[1] Furdyna J K 1982 J. Vac. Sci. Technol. 21 220
[2] Rogalski A 1991 Infrared Phys. 31 117
[3] Becla P 1988 J. Vac. Sci. Technol. A 6 2725
[4] Becla P 1993 Proc. SPIE 2021 22
[5] Piotrowski J, Rogalski A 2004 Infrared Phys. Technol. 46 115
[6] Anderson J R, Görska R M, Azevedo L J, Venturini E L 1986 Phys. Rev. B 33 4706
[7] Nagata S, Galazka R R, Mullin D P, Akbarzadeh H, Khattak G D, Furdyna J K, Keesom P H 1980 Phys. Rev. B 22 3331
[8] Wang Z W, Jie W Q 2007 Acta Phys. Sin. 56 1141 (in Chinese) [王泽温, 介万奇 2007 56 1141]
[9] Wojtowicz T, Mycielski A 1983 Physica B 117---118 476
[10] Sawicki M, Dietl T, Kossut J, Igalson J, Wojtowicz T, Plesiewicz W 1986 Phys. Rev. Lett. 56 508
[11] Wojtowicz T, Dietl T, Sawicki M, Plesiewicz W, Jaroszynski J 1986 Phys. Rev. Lett. 56 2419
[12] Dillon J F, Furdyna J K, Debska U, Mycielski A 1990 J. Appl. Phys. 67 4917
[13] Krenn H, Zawadzki W, Bauer G 1985 Phys. Rev. Lett. 55 1510
[14] Gui Y S, Liu J, Ortner K, Daumer V, Becker C R, Buhmann H, Molenkamp L W 2001 Appl. Phys. Lett. 79 1321
[15] Gui Y S, Becker C R, Liu J, König M, Daumer V, Kiselev M N, Buhmann H, Molenkamp L W 2004 Phys. Rev. B 70 195328
[16] Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2008 Phys. Rev. Lett. 101 146802
[17] Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1977 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 53 1977]
[18] Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 55 2955]
[19] Shapira Y, Oliveira N F, Ridgley D H, Kershaw R, Dwight K, Wold A 1986 Phys. Rev. B 34 4187
[20] Shapira Y, Oliveira N F, Becla P, Vu T Q 1990 Phys. Rev. B 41 5931
[21] Kolodziejski L A, Sakamoto T, Gunshor R L, Datta S 1984 Appl. Phys. Lett. 44 799
[22] Aggarwal R L, Furdyna J K, von Molnar S 1987 Diluted Magnetic (Semimagnetic) Semiconductors (Pennsylvania: Materials Research Society) p209
[23] Hagston W E, Stirner T, Harrison P, Holbrook O F, Goodwin J P 1994 Phys. Rev. B 50 5264
[24] Anderson J R, Johnson W B, Stone D R 1983 J. Vac. Sci. Technol. A 1 1761
[25] Johnson W B, Anderson J R, Stone D R 1984 Phys. Rev. B 29 6679
[26] Shen J X, Zheng G Z, Guo S L, Tang D Y 1993 Solid State Commun. 85 57
[27] Galazka R R, Nagata S, Keesom P H 1980 Phys. Rev. B 22 3344
[28] Spalek J, Lewicki A, Tarnawski Z, Furdyna J K, Galazka R R, Obuszko Z 1986 Phys. Rev. B 33 3407
[29] Shapira Y, Ridgley D H, Dwight K, Wold A, Martin K P, Brooks J S 1985 J. Appl. Phys. 57 3210
[30] Shapira Y, Kautz R L 1974 Phys. Rev. B 10 4781
[31] Chu J H 2005 Narrow-gap Semiconductor Physics (Beijing: Science Press) pp283---303 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第283---303页]
[32] Krenn H, Kaltenegger K 1989 Phys. Rev. B 39 10918
[33] Warnock J, Wolff P A 1985 Phys. Rev. B 31 6579
[34] Nhung T H, Planel R, Benoit C, Guillaume L, Bhattacharjee A K 1985 Phys. Rev. B 31 2388
[35] Xia J B, Ge W K, Chang K 2008 Semiconductor Spintronics (Beijing: Science Press) pp51---56 (in Chinese) [夏建白, 葛惟昆, 常凯 2008 半导体自旋电子学 (北京: 科学出版社) 第51---56页]
[36] Dietl T, Spalek J 1983 Phys. Rev. B 28 1548
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[1] Furdyna J K 1982 J. Vac. Sci. Technol. 21 220
[2] Rogalski A 1991 Infrared Phys. 31 117
[3] Becla P 1988 J. Vac. Sci. Technol. A 6 2725
[4] Becla P 1993 Proc. SPIE 2021 22
[5] Piotrowski J, Rogalski A 2004 Infrared Phys. Technol. 46 115
[6] Anderson J R, Görska R M, Azevedo L J, Venturini E L 1986 Phys. Rev. B 33 4706
[7] Nagata S, Galazka R R, Mullin D P, Akbarzadeh H, Khattak G D, Furdyna J K, Keesom P H 1980 Phys. Rev. B 22 3331
[8] Wang Z W, Jie W Q 2007 Acta Phys. Sin. 56 1141 (in Chinese) [王泽温, 介万奇 2007 56 1141]
[9] Wojtowicz T, Mycielski A 1983 Physica B 117---118 476
[10] Sawicki M, Dietl T, Kossut J, Igalson J, Wojtowicz T, Plesiewicz W 1986 Phys. Rev. Lett. 56 508
[11] Wojtowicz T, Dietl T, Sawicki M, Plesiewicz W, Jaroszynski J 1986 Phys. Rev. Lett. 56 2419
[12] Dillon J F, Furdyna J K, Debska U, Mycielski A 1990 J. Appl. Phys. 67 4917
[13] Krenn H, Zawadzki W, Bauer G 1985 Phys. Rev. Lett. 55 1510
[14] Gui Y S, Liu J, Ortner K, Daumer V, Becker C R, Buhmann H, Molenkamp L W 2001 Appl. Phys. Lett. 79 1321
[15] Gui Y S, Becker C R, Liu J, König M, Daumer V, Kiselev M N, Buhmann H, Molenkamp L W 2004 Phys. Rev. B 70 195328
[16] Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2008 Phys. Rev. Lett. 101 146802
[17] Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1977 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 53 1977]
[18] Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 55 2955]
[19] Shapira Y, Oliveira N F, Ridgley D H, Kershaw R, Dwight K, Wold A 1986 Phys. Rev. B 34 4187
[20] Shapira Y, Oliveira N F, Becla P, Vu T Q 1990 Phys. Rev. B 41 5931
[21] Kolodziejski L A, Sakamoto T, Gunshor R L, Datta S 1984 Appl. Phys. Lett. 44 799
[22] Aggarwal R L, Furdyna J K, von Molnar S 1987 Diluted Magnetic (Semimagnetic) Semiconductors (Pennsylvania: Materials Research Society) p209
[23] Hagston W E, Stirner T, Harrison P, Holbrook O F, Goodwin J P 1994 Phys. Rev. B 50 5264
[24] Anderson J R, Johnson W B, Stone D R 1983 J. Vac. Sci. Technol. A 1 1761
[25] Johnson W B, Anderson J R, Stone D R 1984 Phys. Rev. B 29 6679
[26] Shen J X, Zheng G Z, Guo S L, Tang D Y 1993 Solid State Commun. 85 57
[27] Galazka R R, Nagata S, Keesom P H 1980 Phys. Rev. B 22 3344
[28] Spalek J, Lewicki A, Tarnawski Z, Furdyna J K, Galazka R R, Obuszko Z 1986 Phys. Rev. B 33 3407
[29] Shapira Y, Ridgley D H, Dwight K, Wold A, Martin K P, Brooks J S 1985 J. Appl. Phys. 57 3210
[30] Shapira Y, Kautz R L 1974 Phys. Rev. B 10 4781
[31] Chu J H 2005 Narrow-gap Semiconductor Physics (Beijing: Science Press) pp283---303 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第283---303页]
[32] Krenn H, Kaltenegger K 1989 Phys. Rev. B 39 10918
[33] Warnock J, Wolff P A 1985 Phys. Rev. B 31 6579
[34] Nhung T H, Planel R, Benoit C, Guillaume L, Bhattacharjee A K 1985 Phys. Rev. B 31 2388
[35] Xia J B, Ge W K, Chang K 2008 Semiconductor Spintronics (Beijing: Science Press) pp51---56 (in Chinese) [夏建白, 葛惟昆, 常凯 2008 半导体自旋电子学 (北京: 科学出版社) 第51---56页]
[36] Dietl T, Spalek J 1983 Phys. Rev. B 28 1548
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