球壳量子点中极化子和量子比特的声子效应

赵翠兰; 丛银川

doi:10.7498/aps.61.186301

摘要

采用求解能量本征方程、LLP幺正变换、变分相结合的方法研究球壳量子点中极化子和量子比特的声子效应. 数值计算表明: 声子效应使极化子的基态(或激发态)能量小于电子的基态(或激发态)能量, 使量子比特的振荡周期减小, 且内径给定时, 随着外径的增大声子效应对极化子和量子比特振荡周期的影响越大; 声子效应不改变量子比特内电子概率密度分布的幅值, 量子比特内中心球面处概率密度幅值最大, 界面处概率密度为零, 其它处的概率密度幅值介于最大和最小之间, 且各个空间点的概率密度随半径和方位角的变化而变化, 随时间做周期性振荡.

关键词:

Abstract

The influence of phonon on the properties of polaron and qubit in spherical shell quantum dot is studied by solving accurately the time-independent Schrödinger equation, Lee-Low-Pines unitary transformation and variation methods. The numerical results indicate that phonon effect leads to a lower energy of ground (or excited) state of polaron than electronic energy of ground (or excited) state and the increased oscillating period of a qubit, and the phonon effect becomes more obvious with outer radius increasing when inner radius is const. The numerical results also show that the phonon effect cannot influence the amplitude of probability density distribution of electrons in quantum bit, and that the probability density distribution of electrons is dependent on co-ordinate and time and its amplitude is maximal in centre spherical surface and but zero in boundary surface. The probability density of electrons at each position oscillates periodically with time.

Keywords:

作者及机构信息

1.
内蒙古民族大学物理与电子信息学院, 通辽 028043

基金项目: 国家自然科学基金(批准号: 10964005);内蒙古高等学校科研基金(批准号: NJzy08085)资助的课题.

Authors and contacts

1.
College of Physics and Electronic Information, Inner Mongolia University for Nationalities, Tongliao 028043, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 10964005), the Science Research Foundation of Institution of Higher Education of Inner Mongolia Autonomous Region, China (Grant No. NJzy08085).

参考文献

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施引文献

[1]	Feynman R P 1982 Int. J. Theor. Phys. 21 467
[2]	Feynman R P 1986 Foundations of Physics 16 507
[3]	Pellizzari T, Gardiner S A, Cirac J I, Zoller P 1995 Phys. Rev. Lett. 75 3788
[4]	Cirac J I, Zoller P 1995 Phys. Rev. Lett. 74 4091
[5]	Gershenfeld N A, Chuang I L 1997 Science 275 350
[6]	Nakamura Y, Pashkin Y A, Tsai J S 1999 Nature 398 786
[7]	Li S S, Long G L, Bai F S, Zheng H Z 2001 Proc. Nat. Acad. Sci. 98 11847
[8]	Li X Q, Yan Y J 2002 Phys. Rev. B 65 205301
[9]	Gao K Y, Zhao C L 2008 Acta Phys. Sin. 57 4446 (in Chinese) [高宽云, 赵翠兰 2008 57 4446]
[10]	Cong Y C, Zhao C L 2009 Reseach & Progress of Sclid State Electronic 29 538 (in Chinese) [从银川, 赵翠兰 2009 固体电子学研究与进展 29 538]
[11]	Zhang Y F, Jia J F, Han T Z, Tang Z, Shen Q T, Guo Y, Xue Q K 2005 Chin. Phys. 14 1910
[12]	Liu X J, Gao K, Li Y, Wei J H, Xie S J 2007 Chin. Phys. 16 2091
[13]	Oliveira B P W, Haas S 2009 Phys. Rev. B 79 155102
[14]	Stauber T, Vasilevskiy M I 2009 Phys. Rev. B 79 113301
[15]	Harouni M B, Roknizadeh R, Naderi M H 2009 Phys. Rev. B 79 165304
[16]	Zhao C L, Xiao J L 2010 J. Low. Temp. Phys. 160 209
[17]	Xiao J L, Zhao C L 2011 Superlatt. Microstuct. 49 9
[18]	Xiao J L, Ding Z H 2011 J. Low. Tem. Phys. 163 302
[19]	Ding Z H, Xiao J L 2011 Chin. Phys. B 20 097104
[20]	Jiang F S, Zhao C L 2009 Acta Phys. Sin. 58 6786 (in Chinese) [姜福仕, 赵翠兰 2009 58 6786]
[21]	Zhao C L, Gao K Y 2010 Acta Phys. Sin. 59 4857 (in Chinese) [赵翠兰, 高宽云 2010 59 4857]
[22]	Mews A, Eychmüller A, Giersig M, Schooss D, Weller H 1994 J. Phys. Chem. 98 934
[23]	Eychmüller A, Mews A, Weller H 1993 Chem. Phys. Lett. 208 59
[24]	Eychmüller A, Vossmeyer T, Mews A, Weller H 1994 J. Lumin. 58 223
[25]	Kane C L, Mele E J 2005 Phys. Rev. Lett. 95 226801
[26]	Kane C L, Mele E J 2005 Phys. Rev. Lett. 95 146802
[27]	Hasan M Z, Kane C L 2010 Rev. Mod. Phys. 82 3045
[28]	Chang K, Xiao J B 1998 Phys. Rev. B 57 9780
[29]	Chang K, Lou W K 2011 Phys. Rev. Lett. 106 206802

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