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采用两线测量模式对固相烧结方法制备的Nd1-xAxMnO3 (A= Ba, Ca, Sr,x= 00.9) 陶瓷样品电脉冲诱导电阻转变(EPIR)效应和I-V特性进行了测量. 结果表明, 与Nd0.7Sr0.3MnO3一样, 相同浓度掺杂的Nd0.7Ba0.3MnO3和Nd0.7Ca0.3MnO3 样品也能诱发稳定的室温EPIR效应. 进一步对Nd1-xSrxMnO3系列样品的EPIR研究表明, 这种界面相关的EPIR效应与样品中电子或空穴掺杂浓度密切相关, 在半掺杂 (x= 0.5)附近, 样品与电极接触界面能诱发稳定的EPIR效应. 然而, 随掺杂浓度的进一步增大或降低, EPIR效应逐渐出现减弱、不明显到完全消失的过程. 产生这种现象的原因可能与锰氧化物中由于掺杂浓度差异所导致的界面缺陷在不同极性脉冲激励下重新分布而产生的内电场强弱有关.
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关键词:
- 电脉冲诱导电阻转变效应 /
- 深能级陷阱 /
- 锰氧化物 /
- I-V非线性
Electric-pulse-induced resistances (EPIRs) and I-V characteristics of polycrystalline Nd1-xAxMnO3 (A = Ca, Ba, Sr, x = 0-0.9) ceramics synthesized by solid state reaction are investigated. The results show that similar to Nd0.7Sr0.3MnO3, compounds Nd0.7Ba0.3MnO3 and Nd0.7Ca0.3MnO3, with the same doped concentration as that of Nd0.7Sr0.3MnO3, can also exhibit a nonlinear I-V behaviour and a stable EPIR effect at room temperature. Further studies on the Nd1-xSrxMnO3 series indicate that the stability of EPIR is closely correlated with the Sr doped concentration. Around the half doping x= 0.5, the EPIR effect can be observed stably. With Sr concentration increasing or decreasing, however, the EPIR becomes weaker gradually and disappears completely if Sr concentration further increases or decreases. The redistribution of various defects between the electrode and bulk interface with polar pulses is proposed to explain the unique transport behaviour.-
Keywords:
- electric-pulse-induced resistance /
- deep-level trap defects /
- manganite /
- I-V nonlinearity
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[32] Zhang T, Su Z H, Chen H J, Ding L H, Zhang W F 2008 Appl. Phys. Lett. 93 172104
[33] Xie Y W, Sun J R, Wang D J, Liang S, Shen B G 2006 J. Appl. Phys. 100 033704
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[35] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (the 7th edition) (Beijing: Publishing House of Electronics Industry) pp63-70 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学(第7版)(北京:电子工业出版社) 第63—70页]
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[1] Zener C 1951 Phys. Rev. 82 403
[2] Kanamori J 1960 J. Appl. Phys. 31 14S
[3] Jonker G H, van Santen J H 1950 Physica 16 337
[4] Jahn H A, Teller E 1937 Proc. Roy. Soc. A 161 220
[5] Tan G T , Chen Z H, Zhang X Z 2005 Acta Phys. Sin. 54 379 (in Chinese) [谈国太, 陈正豪, 章晓中 2005 54 379]
[6] Coey M 2005 Nature Mater. 4 9
[7] Wang S B, Zhang J C, Cao G X, Yu J, Jing C, Cao S X 2006 Acta Phys. Sin. 55 367 (in Chinese) [王仕鹏, 张金仓, 曹桂新, 俞坚, 敬超, 曹世勋 2006 55 367]
[8] Li B H, Xianyu W X, Wan X, Zhang J, Shen B G 2000 Acta Phys. Sin. 49 1366 (in Chinese) [李宝河, 鲜于文旭, 万欣, 张健, 沈保根 2000 49 1367]
[9] Yang C P, Chen S S, Dai Q, Guo D H, Wang H 2007 Acta Phys. Sin. 56 4908 (in Chinese) [杨昌平, 陈顺生, 戴琪, 郭定和, 王浩 2007 56 4908]
[10] Chen S S, Yang C P, Deng H, Sun Z G 2008 Acta Phys. Sin. 57 3798 (in Chinese) [陈顺生, 杨昌平, 邓恒, 孙志刚 2008 57 3798]
[11] Chen S S, Yang C P, Wang H, Medvedeva I V, Bärner K 2010 Mat. Sci. Eng. B 172 167
[12] Liu S Q, Wu N J, Ignative A 2000 Appl. Phys. Lett. 76 2749
[13] Tsui S, Baikalov A, Cmaidalka J, Sun Y Y, Wang Y Q, Xue Y Y, Chu C W, Chen L, Jacobson A J 2004 Appl. Phys. Lett. 85 317
[14] Odagawa A, Sato H, Inoue I H, Akoh H, Kawasaki M, Tokura Y, Kanno T, Adachi H 2004 Phys. Rev. B 70 224403
[15] Rozenberg M J, Inoue I H, Sanchez M J 2004 Phys. Rev. Lett. 92 178302
[16] Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K, Baek I G, Kim H J, Yim E K, Lee J E, Park S O, Kim H S, Chung U I, Moon J T, Ryu B I 2006 Appl. Phys. Lett. 88 202102
[17] Sawa A, Fujii T, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 18 4073
[18] Yang R, Li M X, Yu W D, Gao X D, Shang D S, Liu X J, Cao X, Wang Q, Chen L D 2009 Appl. Phys. Lett. 95 072105
[19] Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 957
[20] Shang D S, Wang Q, Chen L D, Dong R, Li X M, Zhang W Q 2006 Phys. Rev. B 73 245427
[21] Aoyama K, Waku K, Asanuma A, Uesu Y, Katsufuji T 2004 Appl. Phys. Lett. 85 1208
[22] Chen S S 2010 MS Dissertation (Wuhan: Hubei University) (in Chinese) [陈顺生 2010 硕士学位论文 (武汉:湖北大学)]
[23] Chen S S, Yang C P, Xu L F, Yang F J, Wang H B, Wang H, Xiong L B, Yu Y, Medvedeva I V, Bärner K 2010 Solid State Commun. 150 240
[24] Chen S S, Yang C P, Ren C L, Wang R L, Wang H, Medvedeva I V, Baerner K 2011 Bull. Mater. Sci. 34 1
[25] Chen S S, Huang C, Wang R L, Yang C P, Medvedeva I V, Sun Z G 2011 Acta Phys. Sin. 60 037304 (in Chinese) [陈顺生, 黄昌, 王瑞龙, 杨昌平, Medvedeva I V, 孙志刚 2011 60 037304]
[26] Yang C P, Chen S S, Dai Q, Song X P 2011 Acta Phys. Sin. 60 117202 (in Chinese) [杨昌平, 陈顺生, 戴琪, 宋学平 2011 60 117202]
[27] Pattabiraman M, Murugaraj P, Rangarajan G, Dimitropoulos C, Ansermet J P, Papavassiliou G, Balakrishnan G, Paul D M, Lees M R 2002 Phys. Rev. B 66 224415
[28] Tarashita H, Neumeier J J 2005 Phys. Rev. B 71 134420
[29] Chen P, Du Y W 2005 Chin. J. Phys. 39 357
[30] Reinaldo Azevedo Vargas, Rubens Chiba, Marco Andreoli, Emilia Satoshi Miyamaru Seo 2010 Mater. Sci. Forum 660-661 1113
[31] Woodward P M, Cox D E, Vogt T, Rao C N R, Cheetham A K 1999 Chem. Mater. 11 3528
[32] Zhang T, Su Z H, Chen H J, Ding L H, Zhang W F 2008 Appl. Phys. Lett. 93 172104
[33] Xie Y W, Sun J R, Wang D J, Liang S, Shen B G 2006 J. Appl. Phys. 100 033704
[34] Morchshakov V, Annaorazov M P, Aybar H S, Yang C P, Troyanchuk I O, Barner K 2009 J. Appl. Phys. 105 063704
[35] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (the 7th edition) (Beijing: Publishing House of Electronics Industry) pp63-70 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学(第7版)(北京:电子工业出版社) 第63—70页]
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