考虑晶粒尺寸效应的超薄(1050 nm) Cu电阻率模型研究

王宁; 董刚; 杨银堂; 陈斌; 王凤娟; 张岩

doi:10.7498/aps.61.016802

摘要

结合Marom模型与实验数据, 给出了晶粒尺寸与金属薄膜厚度的关系式. 基于已有的理论模型, 针对厚度为1050 nm Cu薄膜, 考虑到表面散射与晶界散射以及电阻率晶粒尺寸效应, 提出一种简化电阻率解析模型. 结果表明, 在1020 nm薄膜厚度范围内, 考虑晶粒尺寸效应后的简化模型与现有实验数据符合得更好. 相对于Lim, Wang与Marom模型, 所提模型的相对标准差分别降低74.24%, 54.85%, 78.29%.

关键词:

Abstract

A relation between grain size and metal film is given by combining the Marom model with experiment data. Based on available theory model, taking into account the surface scattering, boundary scattering and grain size effect, an analytical resistivity model is presented for the 1050 nm thick Cu films. In particular, within a range of 1020 nm, the findings show that the proposed model with consideration of grain size effects is in good agreement with experimental results. Compared with Lim, Wang and Marom' models, the proposed method can reduce the relative standard deviations by 74.24%, 54.85% and 78.29%, respectively.

Keywords:

作者及机构信息

1.
西安电子科技大学微电子所, 宽禁带半导体材料与器件教育部重点实验室, 西安 710071

基金项目: 国家自然科学基金(批准号: 60606006)和国家杰出青年基金(批准号: 60725415)资助的课题.

Authors and contacts

1.
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xian 710071, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60606006) and the National Science Fund for Distinguished Young Scholars of China (Grant No. 60725415).

参考文献

[1]	Sun T, Yao B, Warren A P, Barmak K, Toney M F, Peale R E, Coffey K R 2010 Phys. Rev. B 81 155454
[2]	Feldman B, Dunham S T 2009 Appl. Phys. Lett. 95 222101
[3]	Sun T, Yao B, Warren A P, Barmak K, Toney M F, Peale R E, Coffey K R 2009 Phys. Rev. B 79 41402
[4]	Barnat E V, Nagakura D, Wang P I, Lu T M 2002 J. Appl. Phys. 91 1667
[5]	Zhu Z M, Wang D J, Yang Y T 2010 Chin. Phys. B 19 097803
[6]	Bid A, Bora A, Raychaudhuri A K 2006 Phys. Rev. B 74 35426
[7]	Steinh Ogl W, Schindler G U, Steinlesberger G, Engelhardt M 2002 Phys. Rev. B 66 75414
[8]	Feldman B, Deng R, Dunham S T 2008 J. Appl. Phys. 103 113715
[9]	Dong G, Yang Y, Chai C C, Yang Y T 2010 Chin. Phys. B 19 110202
[10]	Dong G, Xue M, Li J W, Yang Y T 2011 Acta Phys. Sin. 60 036601 (in Chinese) [董刚, 薛萌, 李建伟, 杨银堂 2011 60 036601]
[11]	Dong G, Liu J, Xue M, Yang Y T 2011 Acta Phys. Sin. 60 046602 (in Chinese) [董刚, 刘嘉, 薛萌, 杨银堂 2011 60 046602]
[12]	Liu H D, Zhao Y P, Ramanath G, Murarka S P, Wang G C 2001 Thin Solid Films 384 151
[13]	Lim J W, Isshiki M 2006 J. Appl. Phys. 99 94909
[14]	Mayadas A F, Shatzkes M 1970 Phys. Rev. B 1 1382
[15]	Marom H, Eizenberg M 2004 J. Appl. Phys. 96 3319
[16]	Graham R L, Alers G B, Mountsier T, Shamma N, Dhuey S, Cabrini S, Geiss R H, Read D T, Peddeti S 2010 Appl. Phys. Lett. 96 42116
[17]	Wang M, Zhang B, Zhang G P, Yu Q Y, Liu C S 2009 J. Mater. Sci. Technol. 25 699
[18]	Emre Yarimbiyik A, Schafft H A, Allen R A, Vaudin M D, Zaghloul M E 2009 Microelectron. Eng. 49 127
[19]	Mayadas A F, Shatzkes M, Janak J F 1969 Appl. Phys. Lett. 14 345
[20]	Barmak K, Sun T, Coffey K R 2010 AIP Conference Proceedings Stress-induced Phenomena in Metallization: 11th International Workshop Bad Schandau, Germany April 12–14, 2010 p12
[21]	Onuki J, Khoo K, Sasajima Y, Chonan Y, Kimura T 2010 J. Appl. Phys. 108 44302
[22]	Carpenter D T, Rickman J M, Barmak K 1998 J. Appl. Phys. 84 5843
[23]	Marom H, Ritterband M, Eizenberg M 2006 Thin Solid Films 510 62
[24]	Sun T, Yao B, Warren A, Kumar V, Barmak K, Coffey K R 2008 2008 IEEE International Interconnect Technology Conference Burlingame, United States, June 1–4, 2008 p141
[25]	Liu W, Yang Y, Asheghi M 2006 Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference, San Diego, United States, May 30–June 2, 2006 p1171
[26]	Shojaei Zadeh S, Zhang S, Liu W, Yang Y, Sadeghipour S M, Asheghi M, Sverdrup P 2004 Thermomechanical Phenomena in Electronic Systems-Proceedings of the Intersociety Conference Las Vegas, NV United States, June 1–4, 2004 p575
[27]	Fenn M, Akuetey G, Donovan P E 1998 J. Phys.: Condens Matter 10 1707
[28]	Fenn M, Petford Long A K, Donovan P E 1999 J. Magn. Magn. Mater. 198 231
[29]	Marom H, Eizenberg M 2006 J. Appl. Phys. 99 123705
[30]	Rossnagel S M, Kuan T S 2004 J. Vac. Sci. Technol. B 240
[31]	Messaadi S, Medouer H, Daamouche M 2010 J. Alloys Compd. 489 609

施引文献

[1]	Sun T, Yao B, Warren A P, Barmak K, Toney M F, Peale R E, Coffey K R 2010 Phys. Rev. B 81 155454
[2]	Feldman B, Dunham S T 2009 Appl. Phys. Lett. 95 222101
[3]	Sun T, Yao B, Warren A P, Barmak K, Toney M F, Peale R E, Coffey K R 2009 Phys. Rev. B 79 41402
[4]	Barnat E V, Nagakura D, Wang P I, Lu T M 2002 J. Appl. Phys. 91 1667
[5]	Zhu Z M, Wang D J, Yang Y T 2010 Chin. Phys. B 19 097803
[6]	Bid A, Bora A, Raychaudhuri A K 2006 Phys. Rev. B 74 35426
[7]	Steinh Ogl W, Schindler G U, Steinlesberger G, Engelhardt M 2002 Phys. Rev. B 66 75414
[8]	Feldman B, Deng R, Dunham S T 2008 J. Appl. Phys. 103 113715
[9]	Dong G, Yang Y, Chai C C, Yang Y T 2010 Chin. Phys. B 19 110202
[10]	Dong G, Xue M, Li J W, Yang Y T 2011 Acta Phys. Sin. 60 036601 (in Chinese) [董刚, 薛萌, 李建伟, 杨银堂 2011 60 036601]
[11]	Dong G, Liu J, Xue M, Yang Y T 2011 Acta Phys. Sin. 60 046602 (in Chinese) [董刚, 刘嘉, 薛萌, 杨银堂 2011 60 046602]
[12]	Liu H D, Zhao Y P, Ramanath G, Murarka S P, Wang G C 2001 Thin Solid Films 384 151
[13]	Lim J W, Isshiki M 2006 J. Appl. Phys. 99 94909
[14]	Mayadas A F, Shatzkes M 1970 Phys. Rev. B 1 1382
[15]	Marom H, Eizenberg M 2004 J. Appl. Phys. 96 3319
[16]	Graham R L, Alers G B, Mountsier T, Shamma N, Dhuey S, Cabrini S, Geiss R H, Read D T, Peddeti S 2010 Appl. Phys. Lett. 96 42116
[17]	Wang M, Zhang B, Zhang G P, Yu Q Y, Liu C S 2009 J. Mater. Sci. Technol. 25 699
[18]	Emre Yarimbiyik A, Schafft H A, Allen R A, Vaudin M D, Zaghloul M E 2009 Microelectron. Eng. 49 127
[19]	Mayadas A F, Shatzkes M, Janak J F 1969 Appl. Phys. Lett. 14 345
[20]	Barmak K, Sun T, Coffey K R 2010 AIP Conference Proceedings Stress-induced Phenomena in Metallization: 11th International Workshop Bad Schandau, Germany April 12–14, 2010 p12
[21]	Onuki J, Khoo K, Sasajima Y, Chonan Y, Kimura T 2010 J. Appl. Phys. 108 44302
[22]	Carpenter D T, Rickman J M, Barmak K 1998 J. Appl. Phys. 84 5843
[23]	Marom H, Ritterband M, Eizenberg M 2006 Thin Solid Films 510 62
[24]	Sun T, Yao B, Warren A, Kumar V, Barmak K, Coffey K R 2008 2008 IEEE International Interconnect Technology Conference Burlingame, United States, June 1–4, 2008 p141
[25]	Liu W, Yang Y, Asheghi M 2006 Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference, San Diego, United States, May 30–June 2, 2006 p1171
[26]	Shojaei Zadeh S, Zhang S, Liu W, Yang Y, Sadeghipour S M, Asheghi M, Sverdrup P 2004 Thermomechanical Phenomena in Electronic Systems-Proceedings of the Intersociety Conference Las Vegas, NV United States, June 1–4, 2004 p575
[27]	Fenn M, Akuetey G, Donovan P E 1998 J. Phys.: Condens Matter 10 1707
[28]	Fenn M, Petford Long A K, Donovan P E 1999 J. Magn. Magn. Mater. 198 231
[29]	Marom H, Eizenberg M 2006 J. Appl. Phys. 99 123705
[30]	Rossnagel S M, Kuan T S 2004 J. Vac. Sci. Technol. B 240
[31]	Messaadi S, Medouer H, Daamouche M 2010 J. Alloys Compd. 489 609

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