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采用脉冲激光烧蚀技术,在室温、低压Ar气条件下通过改变气体压强及靶与衬底间距,对纳米Si晶粒成核的气压阈值进行了研究.根据扫描电子显微镜图像、拉曼散射谱和X射线衍射谱对制备样品的表征结果,确定了在室温、激光能量密度为4 J/cm2、靶与衬底间距为3 cm条件下形成纳米Si晶粒的阈值气压为0.6 Pa.结合流体力学模型和成核分区模型,对纳米晶粒的成核动力学过程进行了分析.通过Monte Carlo数值模拟,表明在气相成核过程中,烧蚀Si原子的温度和过饱和密度共同影响着纳米晶粒的成核.
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关键词:
- 脉冲激光烧蚀 /
- 成核 /
- 气压阈值 /
- Monte Carlo数值模拟
Si nano-crystal grains are prepared by pulsed laser ablation in low pressure Ar at room temperature through changing the gas pressure and the distance between target and substrate. The morphologies and compositions of samples are characterized by scanning electron microscopy images, Raman scattering spectra and X-ray diffraction spectra.The pressure threshold for Si grain formation is obtained to be 0.6 Pa at a laser fluence of 4 J/cm2, distance between target and substarate of 3 cm, and room temperature.Combining the fluid mechanics model and the nucleation division model, the dynamics process of nucleation is analyzed.The Monte Carlo simulation shows that the nucleation of nano-crystal grains is determined jointly by temperature and supersaturated density.-
Keywords:
- pulsed laser ablation /
- nucleation /
- pressure threshold /
- Monte Carlo simulation
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[2] [3] Song C, Chen G R, Xu J, Wang T, Sun H C, Liu Y, Li W, Chen K J 2009 Acta Phys. Sin. 58 7878 (in Chinese)[宋 超、陈谷然、徐 骏、王 涛、孙红程、刘 宇、李 伟、陈坤基 2009 58 7878]
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[14] [15] Kim J H, Jeon K A, Choi J B, Lee S Y 2003 Mater. Sci. Eng. B 101 146
[16] [17] Wang Y L, Xu W, Zhou Y, Chu L Z, Fu G S 2007 Laser Part. Beams 25 9
[18] [19] Fu G S, Wang Y L,Chu L Z, Zhou Y, Yu W, Han L, Peng Y C 2005 Europhys. Lett. 69 758
[20] Chu L Z, Lu L F, Wang Y L, Fu G S 2007 Acta Phys. Sin. 56 3374 (in Chinese) [褚立志、卢丽芳、王英龙、傅广生 2007 56 3374 ]
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[26] Ali A M, Inokuma T, Kurata Y, Hasegawa S 2002 Jpn. J. Appl. Phys. 41 169
[27] [28] [29] Wang Y L, Deng Z C, Chu L Z, Fu G S, Peng Y C 2009 Europhys. Lett. 86 15001
[30] Chen G R, Song C, Xu J, Wang D Q, Xu L, Ma Z Y, Li W, Huang X F, Chen K J 2010 Acta Phys. Sin 59 5681 (in Chinese) [陈谷然、宋 超、徐 骏、王旦清、徐 岭、马忠元、李 伟、黄信凡、陈坤基 2010 59 5681]
[31] -
[1] Petrova V, Muschik T 1992 Appl. Phys. Lett. 61 943
[2] [3] Song C, Chen G R, Xu J, Wang T, Sun H C, Liu Y, Li W, Chen K J 2009 Acta Phys. Sin. 58 7878 (in Chinese)[宋 超、陈谷然、徐 骏、王 涛、孙红程、刘 宇、李 伟、陈坤基 2009 58 7878]
[4] Masini G, Colace L, Assanto G 2002 Mater. Sci. Eng. B 89 2
[5] [6] Lowndes D H, Rouleau C M, Thundat T, Duscher G, Kenik E A, Pennycook S J 1998 Appl. Surf. Sci. 127 355
[7] [8] Wang Y L, Deng Z C, Fu G S, Zhou Y, Chu L Z, Peng Y C 2006 Thin Solid Films 515 1897
[9] [10] [11] Yoshida T, Takeyama S, Yamada Y, Mutoh K 1996 Appl. Phys. Lett. 68 1772
[12] [13] Fu G S, Ding X C, Guo R Q, Zhai X L, Chu L Z, Deng Z C, Liang W H, Wang Y L 2011 Acta Phys. Sin. 60 018102 (in Chinese) [傅广生、丁学成、郭瑞强、翟小林、褚立志、邓泽超、梁伟华、王英龙 2011 60 018102 ]
[14] [15] Kim J H, Jeon K A, Choi J B, Lee S Y 2003 Mater. Sci. Eng. B 101 146
[16] [17] Wang Y L, Xu W, Zhou Y, Chu L Z, Fu G S 2007 Laser Part. Beams 25 9
[18] [19] Fu G S, Wang Y L,Chu L Z, Zhou Y, Yu W, Han L, Peng Y C 2005 Europhys. Lett. 69 758
[20] Chu L Z, Lu L F, Wang Y L, Fu G S 2007 Acta Phys. Sin. 56 3374 (in Chinese) [褚立志、卢丽芳、王英龙、傅广生 2007 56 3374 ]
[21] [22] [23] Deng Z C, Luo Q S, Chu L Z, Ding X C, Liang W H, Fu G S, Wang Y L 2010 Acta Phys. Sin. 59 4802 (in Chinese) [邓泽超、罗青山、褚立志、丁学成、梁伟华、傅广生、王英龙 2010 59 4802 ]
[24] [25] Qiu S H, Chen C Z, Liu C Q, Wu Y D, Li P, Lin X Y, Yu C Y 2009 Acta Phys. Sin. 58 565 (in Chinese ) [邱胜桦、陈城钊、刘翠青、吴燕丹、李 平、林璇英、余楚迎 2009 58 565]
[26] Ali A M, Inokuma T, Kurata Y, Hasegawa S 2002 Jpn. J. Appl. Phys. 41 169
[27] [28] [29] Wang Y L, Deng Z C, Chu L Z, Fu G S, Peng Y C 2009 Europhys. Lett. 86 15001
[30] Chen G R, Song C, Xu J, Wang D Q, Xu L, Ma Z Y, Li W, Huang X F, Chen K J 2010 Acta Phys. Sin 59 5681 (in Chinese) [陈谷然、宋 超、徐 骏、王旦清、徐 岭、马忠元、李 伟、黄信凡、陈坤基 2010 59 5681]
[31]
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