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Taking account difference in sputtering rate between Cu and Al, we use a polycrystalline CuAlO2 target with a ratio between Cu and Al being 0.9 ∶1 to prepare the Cu-Al-O film by RF magnetron sputtering. The electrical and the optical properties of the thin film are influenced by the temperature of the substrate. When the substrate temperature is around 500 ℃, the film has a good transmission of 70% in the range of the visible light. Calculated by the fitted formula, the direct band gap is 3.52 eV,and it is in good agreement with the theoretical value. Near room temperature, the thin film conforms to the semiconductor thermal activation mechanism, when the substrate temperature is about 500 ℃, the film conductivity reaches 2.4810-3 Scm-1.
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Keywords:
- Cu-Al-O thin films /
- substrate temperature /
- conductivity /
- transmittance
[1] Feng F F, Liu J L, Qiu C, Wang G X, Jiang F Y 2010 Acta Phys. Sin. 59 5706 (in Chinese) [封飞飞、刘军林、邱 冲、王光绪、江风益 2010 59 5706]
[2] Xing H Y, Fan G H,Zhou T M 2009 Acta Phys. Sin. 58 3324 (in Chinese) [邢海英、范广涵、周天明 2009 58 3324]
[3] [4] [5] Li W H, Zhuang Y Q, Du L, Bao J L 2009 Acta Phys. Sin. 58 7183 (in Chinese)[李伟华、庄奕琪、杜 磊、包军林 2009 58 7183]
[6] [7] Kawazoe H, Yasukawa M, Hyodo H 1997 Nature 389 939
[8] [9] Tonooka K, Bando H, Aiura Y 2003 Thin Solid Films 445 327
[10] Ding J A, Sui Y M, Fu W Y, Yang H B, Liu S K, Zeng Y, Zhao W Y, Guo J, Chen H, Li M H 2010 Appl. Surf. Sci. 256 6441
[11] [12] [13] Liu Q J, Liu Z T, Feng L P 2010 Physica. B: Condens. Matter 405 2028
[14] [15] Laskowski R, Christensen N E, Blaha P 2009 Phys. Rev. B 79 165209
[16] [17] Chen D G,Wang Y J, Lin Z 2010 Cryst. Growth Des. 10 2057
[18] Cao Y R, Ma X H, Hao Y,Hu S G 2010 Chin. Phys. B 19 047307
[19] [20] Ma X H, Cao Y R, Hao Y 2010 Chin. Phys. B 19 117308
[21] [22] [23] Ghosh C K, Popuri S R, Mahesh T U 2009 J. Sol-Gel Sci. Technol. 52 75
[24] [25] Lockman Z, Lin L P, Yew C K 2009 Sol. Energy Mater. Sol. Cells 93 1383
[26] Chen G H, Deng J X 2002 Innovative Electronic Thin Films (Beijing: Chemical Industry Press) pp.428 (in Chinese) [陈光华、邓金祥 2002 新型电子薄膜材料,北京:化学工业出版社,第428页]
[27] [28] [29] Lan W 2007 Ph. D. Dissertation (Lanzhou: Lanzhou University) (in Chinese) [兰 伟 2007 博士学位论文 (兰州:兰州大学)]
[30] [31] Misra S K, Chaklader A C D 1975 J. Am. Ceram. Soc. 58 192
[32] Ngamnit W, Thitinai G 2009 Physics Procedia 2 101
[33] [34] [35] Chopra K L 1969 Thin Film Phenomenon (New York: Mc Graw-Hill)
[36] Robertson J, Xiong K, Clark S J 2006 Thin Solid Films 496 1
[37] [38] [39] Katayama-Yoshida H, Koyanagi T, Funashima H 2003 Solid State Commun. 126 135
-
[1] Feng F F, Liu J L, Qiu C, Wang G X, Jiang F Y 2010 Acta Phys. Sin. 59 5706 (in Chinese) [封飞飞、刘军林、邱 冲、王光绪、江风益 2010 59 5706]
[2] Xing H Y, Fan G H,Zhou T M 2009 Acta Phys. Sin. 58 3324 (in Chinese) [邢海英、范广涵、周天明 2009 58 3324]
[3] [4] [5] Li W H, Zhuang Y Q, Du L, Bao J L 2009 Acta Phys. Sin. 58 7183 (in Chinese)[李伟华、庄奕琪、杜 磊、包军林 2009 58 7183]
[6] [7] Kawazoe H, Yasukawa M, Hyodo H 1997 Nature 389 939
[8] [9] Tonooka K, Bando H, Aiura Y 2003 Thin Solid Films 445 327
[10] Ding J A, Sui Y M, Fu W Y, Yang H B, Liu S K, Zeng Y, Zhao W Y, Guo J, Chen H, Li M H 2010 Appl. Surf. Sci. 256 6441
[11] [12] [13] Liu Q J, Liu Z T, Feng L P 2010 Physica. B: Condens. Matter 405 2028
[14] [15] Laskowski R, Christensen N E, Blaha P 2009 Phys. Rev. B 79 165209
[16] [17] Chen D G,Wang Y J, Lin Z 2010 Cryst. Growth Des. 10 2057
[18] Cao Y R, Ma X H, Hao Y,Hu S G 2010 Chin. Phys. B 19 047307
[19] [20] Ma X H, Cao Y R, Hao Y 2010 Chin. Phys. B 19 117308
[21] [22] [23] Ghosh C K, Popuri S R, Mahesh T U 2009 J. Sol-Gel Sci. Technol. 52 75
[24] [25] Lockman Z, Lin L P, Yew C K 2009 Sol. Energy Mater. Sol. Cells 93 1383
[26] Chen G H, Deng J X 2002 Innovative Electronic Thin Films (Beijing: Chemical Industry Press) pp.428 (in Chinese) [陈光华、邓金祥 2002 新型电子薄膜材料,北京:化学工业出版社,第428页]
[27] [28] [29] Lan W 2007 Ph. D. Dissertation (Lanzhou: Lanzhou University) (in Chinese) [兰 伟 2007 博士学位论文 (兰州:兰州大学)]
[30] [31] Misra S K, Chaklader A C D 1975 J. Am. Ceram. Soc. 58 192
[32] Ngamnit W, Thitinai G 2009 Physics Procedia 2 101
[33] [34] [35] Chopra K L 1969 Thin Film Phenomenon (New York: Mc Graw-Hill)
[36] Robertson J, Xiong K, Clark S J 2006 Thin Solid Films 496 1
[37] [38] [39] Katayama-Yoshida H, Koyanagi T, Funashima H 2003 Solid State Commun. 126 135
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