Bi-Sb-Te基热电薄膜温差电池离子束溅射制备与表征

范平; 蔡兆坤; 郑壮豪; 张东平; 蔡兴民; 陈天宝

doi:10.7498/aps.60.098402

摘要

本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi2Te3热电薄膜和p型Sb2Te3热电薄膜.在退火时间同为1 h的条件下,对所制备的Bi2Te3薄膜和Sb2Te3薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150 ℃时,制备的n型Bi2Te3

关键词:

In this paper, N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films are deposited by ion beam sputtering with Bi/Te and Sb/Te binary compound target. Sb2Te3 thin films and Bi2Te3 thin films are annealed at different annealing temperatures for 1 h and their thermoelectric properties are characterized. When the annealing temperature is 150 ℃, both the Seebeck coefficient and power factor of the Bi2Te3 thin films have maximal values of -148 μVK-1 and 0.893×10-3 Wm-1K-2 respectively. Sb2Te3 thermoelectric thin film has a seebeck coefficient of 117 μVK-1 and a maximal power factor of 0.797×10-3 Wm-1K-2 when the annealing temperature is 200 ℃. Therefore, Sb2Te3 thin films at the annealing temperature of 200 oC and Bi2Te3 thin films at the annealing temperature of 150 ℃ are selected to fabricate the single thin film thermoelectric generation. When the temperature difference between the cold side and the heat side is 50K, the output voltage of the single thin film thermoelectric generation is 15.26 mV and the maximal output power is 0.129 μW.

Keywords:

作者及机构信息

1.
深圳大学物理科学与技术学院,薄膜物理与应用研究所,深圳市传感器技术重点实验室,深圳 518060

基金项目: 深圳市南山区高等院校、科研机构研发项目(批准号: 南科院2009035)和深圳大学应用技术开发项目(批准号: 201059)资助的课题.

Authors and contacts

1.
College of Physical Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen key laboratory of sensor technology, Shenzhen University, Shemzhen 518060, China

参考文献

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施引文献

[1]	Bell L E 2008 Science 321 1457
[2]	DiSalvo F J 1999 Science 285 703
[3]	Wei Wang,Falong Jia,Qinghua Huang,Jianzhong Zhang 2005 Microelectronic Engineering 77 223
[4]	Ichiro Matsubara, Ryoji Funahashi, Tomonari Takeuchi, Satoshi Sodeoka, Tadaaki Shimizu, Kazuo Ueno 2001 American Institute of Physics 78 3627
[5]	Wenjie Xie, Jian He, Hye Jung Kang, Xinfeng Tang, Song Zhu, Mark Laver, Shanyu Wang, John, Paothep Pichanusakorn,Prabhakar Bandaru 2010 Science and Engineering R 67 19
[6]	Copley R D, Brown C M, Zhang Q J, Tritt T M 2010 Nano Lett. 10 3283
[7]	Mu W D, Cheng H F, Tang G P, Wu Z Q 2009 Acta Phys. Sin. 58 1212 (in Chinese) [穆武第、程海峰、唐耿平、吴志桥 2009 58 1212]
[8]	Fan P, Zhang D P, Liang G X, Zheng Z H 2009 State Intellectual Property Office of P.R.C CN101483218 (in Chinese) [范平、张东平、梁广兴、郑壮豪 2009 中华人民共和国国家知识产权局 CN101483218]
[9]	Kwon S D, Ju B K,Yoon S J,Kim J S 2009 Journal of Electronic Materials 38 920
[10]	Liao C N, She T H 2007 Thin Solid Films 515 8059
[11]	Jiang M B, Wu Z X, Zhou M, Huang R J, Li L F 2010 Acta Phys. Sin. 59 7314 (in Chinese) [蒋明波、吴智雄、周敏、黄荣进、李来风 2010 59 7314]
[12]	Zheng Z H, Fan P, Liang G X, Zhang D P, Cai X M, Chen T B 2010 Journal of Physics and Chemistry of Solid 71 1713
[13]	Helin Zou, Rowe D M, Gao Min 2001 Journal of Crystal Growth 222 82
[14]	Fan P, Zheng Z H, Liang G X, Cai X M, Zhang D P 2010 Chin. Phys. Lett. 27 087201
[15]	Fan P, Zheng Z H, Liang G X, Zhang D P, Cai X M 2010 Journal of Alloys and Compounds 505 278
[16]	Gao X H,Yang Q Y,Zhu W,Bao S Q,Pan X A,Duan X K 2006 Science in China Series E 1273 (in Chinese) [郜鲜辉、杨君友、朱文、侯杰、鲍思前、樊希安、段兴凯 2006 中国科学E 36 1273]
[17]	Fan P, Zheng Z H, Liang G X, Zhang D P, Cai X M 2010 Acta Phys. Sin. 59 1243 (in Chinese) [范平、郑壮豪、梁广兴、张东平、蔡兴民 2010 59 1243]
[18]	Takashiri M, Shirakawa T, Miyazaki K, Tsukamoto T 2007 Sensors and Actuators A 138 329

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