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利用金属有机化合物化学气相淀积(MOCVD)生长了发射层厚度为150 nm、掺杂浓度为1.6×1017 cm-3的透射式GaN光电阴极,并在超高真空激活系统中对其进行了激活.通过多信息量测试系统进行了测试,发现透射式负电子亲和势(NEA)GaN光电阴极的量子效率曲线成一个"门"的形状,在255—355 nm波段有较大且平坦的响应,在290 nm处取得最大值为13%,由于AlN缓冲层对短波段光的吸收系数较大,在小于255 nm的波段量子效率出现了下降,当波长大于3
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关键词:
- 透射式 /
- NEA GaN光电阴极 /
- 量子效率
Transmission-mode GaN photocathodes with the emission layer thickness of 150 nm and the doping concentration of 1.6×1017 cm-3 were grown by metal-organic chemical vapor deposition (MOCVD) and were activated in ultra-high vacuum system. The result was tested by Multi-information test system. The shape of transmission-mode NEA GaN photocathode quantum yield curves looks like the Chinese charocter 门 for "door", the photocathode had flat and high response between 255 and 355 nm, the highest quantum yield of 13% appeared at 290 nm. When the wavelength was less than 255 nm the quantum yield was decreased because of the high absorption coefficient of AlN buffer layer at short wavelengths. The quantum yield was also decreased beyond 355 nm and fell to 3.5% at the threshold of 365 nm, the quantum yield at 385 nm was reduced to 0.1% and the cut-off character of long wave was well shown. The quantum yield formula of transmission-mode GaN photocathode has been solved from diffusion equations, and the main factors affecting the quantum yield mostly, including electron diffusion length, electron escape probability, active-layer thickness and the back-interface recombination velocity, were analysed and discussed. The future work is optimizing the structure of the photocathodes.-
Keywords:
- transmission-mode /
- NEA GaN photocathodes /
- quantum efficiency
[1] Qiao J L, Chang B K, Qian Y S, Du X Q, Zhang Y J, Gao P, Wang X H, Guo X Y, Niu J, Gao Y T 2010 Acta Phys. Sin. 59 3577 (in Chinese) [乔建良、常本康、钱芸生、杜晓晴、张益军、高 频、王晓晖、郭向阳、牛 军、高有堂 2010 59 3577]
[2] Jia L, Xie E Q, Pan X J, Zhang Z X 2009 Acta Phys. Sin. 58 3377 (in Chinese) [贾 璐、谢二庆、潘孝军、张振兴 2009 58 3377]
[3] Feng Q, Wang F X, Hao Y 2004 Acta Phys. Sin. 53 3587 (in Chinese) [冯 倩、王峰祥、郝 跃 2004 53 3587]
[4] Machuca F, Sun Y, Liu Z, Loakeimidi K, Pianetta P, Pease R F W 2000 J. Vac. Sci. Technol. 18 3042
[5] Machuca F, Liu Z, Maldonado J R, Coyle S T, Pianetta P, Pease R F W 2004 J. Vac. Sci. Technol. 22 3565
[6] Zhou M, Zhao D G 2008 Acta Phys. Sin. 57 4570 (in Chinese) [周 梅、赵德刚 2008 57 4570]
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[8] Oswald H W, Siegmund, Anton S, Tremsin, John V, Vallerga, Jason B, McPhate, Jeffrey S, Hull, James M, Amir M D 2008 Proc. SPIE 7021 70211B
[9] Mizuno I, T Nihashi, T Nagai, M Niigaki, Y Shimizu, K Shimano, K Katoh, T Ihara, K Okano, M Matsumoto, M Tachino 2008 Proc. SPIE 6945 69451N
[10] Ulmer M P, Wessels B W, Han B, Gregie J, Tremsin A S, Siegmund O H W 2003 Proc. SPIE 5164 144
[11] Spicer W E 1958 Phys. Rev. 112 114
[12] Spicer W E, HerreraGómez A 1993 Proc. SPIE 2022 18
[13] Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese) [乔建良、常本康、杜晓晴、牛 军、邹继军 2010 59 2855]
[14] Antypas G A, James L W, Uebbing J J 1970 J. Appl. Phys. 41 2888
[15] Du X Q, Chang B K, Zong Z Y 2004 J. Vac. Sci. Technol. 24 195 (in Chinese) [杜晓晴、常本康、宗志园 2004 真空科学与技术学报 24 195]
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[1] Qiao J L, Chang B K, Qian Y S, Du X Q, Zhang Y J, Gao P, Wang X H, Guo X Y, Niu J, Gao Y T 2010 Acta Phys. Sin. 59 3577 (in Chinese) [乔建良、常本康、钱芸生、杜晓晴、张益军、高 频、王晓晖、郭向阳、牛 军、高有堂 2010 59 3577]
[2] Jia L, Xie E Q, Pan X J, Zhang Z X 2009 Acta Phys. Sin. 58 3377 (in Chinese) [贾 璐、谢二庆、潘孝军、张振兴 2009 58 3377]
[3] Feng Q, Wang F X, Hao Y 2004 Acta Phys. Sin. 53 3587 (in Chinese) [冯 倩、王峰祥、郝 跃 2004 53 3587]
[4] Machuca F, Sun Y, Liu Z, Loakeimidi K, Pianetta P, Pease R F W 2000 J. Vac. Sci. Technol. 18 3042
[5] Machuca F, Liu Z, Maldonado J R, Coyle S T, Pianetta P, Pease R F W 2004 J. Vac. Sci. Technol. 22 3565
[6] Zhou M, Zhao D G 2008 Acta Phys. Sin. 57 4570 (in Chinese) [周 梅、赵德刚 2008 57 4570]
[7] Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Technol. B 21 1863
[8] Oswald H W, Siegmund, Anton S, Tremsin, John V, Vallerga, Jason B, McPhate, Jeffrey S, Hull, James M, Amir M D 2008 Proc. SPIE 7021 70211B
[9] Mizuno I, T Nihashi, T Nagai, M Niigaki, Y Shimizu, K Shimano, K Katoh, T Ihara, K Okano, M Matsumoto, M Tachino 2008 Proc. SPIE 6945 69451N
[10] Ulmer M P, Wessels B W, Han B, Gregie J, Tremsin A S, Siegmund O H W 2003 Proc. SPIE 5164 144
[11] Spicer W E 1958 Phys. Rev. 112 114
[12] Spicer W E, HerreraGómez A 1993 Proc. SPIE 2022 18
[13] Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese) [乔建良、常本康、杜晓晴、牛 军、邹继军 2010 59 2855]
[14] Antypas G A, James L W, Uebbing J J 1970 J. Appl. Phys. 41 2888
[15] Du X Q, Chang B K, Zong Z Y 2004 J. Vac. Sci. Technol. 24 195 (in Chinese) [杜晓晴、常本康、宗志园 2004 真空科学与技术学报 24 195]
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