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高分子有机场效应晶体管中退火引起的自组织微观结构变化的研究

田雪雁 赵谡玲 徐征 姚江峰 张福俊 贾全杰 陈雨 龚伟 樊星

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高分子有机场效应晶体管中退火引起的自组织微观结构变化的研究

田雪雁, 赵谡玲, 徐征, 姚江峰, 张福俊, 贾全杰, 陈雨, 龚伟, 樊星

Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors

Jia Quan-Jie, Chen Yu, Tian Xue-Yan, Yao Jiang-Feng, Zhao Su-Ling, Gong Wei, Fan Xing, Xu Zheng, Zhang Fu-Jun
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  • 为了进一步洞悉高分子薄膜自组织机理和高分子有机场效应晶体管(OFET)载流子迁移率之间的直接关联性,本工作采用先进的同步辐射掠入射X射线衍射(GIXRD)技术,研究了高分子OFET中高分子半导体高度区域规则的聚(3-己基噻吩)(RR-P3HT)工作层薄膜,由不同退火温度所导致的薄膜自组织微观结构的变化.GIXRD测试实验结果显示了,对于不同高分子薄膜制备方法(旋涂法及滴膜法)及不同溶液浓度(RR-P3HT溶液浓度为2.5 mg/ml及3.5 mg/ml)制备的RR-P3HT有机半导体工作层,在氮气气氛下,
    With the aim of understanding the relationships between polymer self-organization and charge carrier mobility of polymer organic field-effect transistor (OFET), we investigate crystalline microstructure change of annealing-induced self-organization of regioregular poly(3-hexylthiophene) (RR-P3HT) active thin layer in polymer OFET by synchrotron radiation grazing incident X-ray diffraction (GIXRD). The crystalline microstructures of RR-P3HT thin film with different preparation methods (spin-coating and drop-casting) and different concentrations (2.5 mg/ml and 3.5 mg/ml) at various annealing temperatures are studied. These results present that, the crystalline structures of RR-P3HT active layers annealed at 150 ℃ are better and enhanced to charge transport, which tend to pack form the thiophene rings are perpendicular and the π-π interchain stacking parallel to the substrate. Furthermore, we find that an appropriate annealing temperature can facilitate the crystal structure of edge-on form, resulting in field-effect mobility enhancement of polymer OFET.
    • 基金项目: 国家自然科学基金(批准号:60978060,10974013,10804006,10774013),教育部博士点基金(批准号:20090009110027,20070004024),博士点新教师基金(批准号:20070004031),北京市科技新星计划(批准号:2007A024),北京市自然科学基金(批准号:1102028),国家杰出青年科学基金(批准号:60825407),北京市科委(批准号:Z090803044009001),973项目(批准号:2010CB327705)资助的课题.
    [1]

    Z Bao, J A Rogers, H E Katz 1999 J. Mater. Chem.9 1895

    [2]

    Drury C J, Mutsaers C M J, Hart C M, Matters M, Leeuw D M de 1998 Appl. Phys. Lett. 73 108

    [3]

    Kawase T, Shimoda T, Newsome C, Sirringhaus H, Friend R H 2003 Thin Solid Films 438 279

    [4]

    Kawase T, Sirringhaus H, Friend R H, Shimoda T 2001 Adv. Mater. 13 1601

    [5]

    Crone B K, Dodabalapur A, Sarpeshkar R, Filas R W, Lin Y Y, Bao Z, O'Neill J H, Li W, Katz H E 2001 J. Appl. Phys. 89 5125

    [6]

    Steudel S, Myny K, Arkhipov V, Deibel C, Vusser S de, Genoe J, Heremans P 2005 Nat. Mater. 8 597

    [7]

    Gundlach D J 2007 Nat. Mater. 6 173

    [8]

    Chabinyc M L, Salleo A 2004 Chem. Mater. 16 4509

    [9]

    Wisnieff R 1998 Nature (London) 394 225

    [10]

    Yuan G C, Xu Z, Zhao S L, Zhang F J, Huang J Z, Huang J Y, Tian X Y, Xu X R 2008 Chin. Phys. B 17 3822

    [11]

    Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Song D D, Zhu H N, Li S Y, Huang J Y, Huang H, Xu X R 2008 Chin. Phys. B 17 1887

    [12]

    Bao Z, Dodabalapur A, Lovinger A J 1996 Appl. Phys. Lett. 69 4108

    [13]

    Ong B S, Wu Y, Liu P, Gardner S 2004 J. Am. Chem. Soc. 126 3378

    [14]

    Tian X Y, Xu Z, Zhao S L, Zhang F J, Xu X R, Yuan G C, Li J, Sun Q J 2010 Chin. Phys. B 19 018103

    [15]

    Sirringhaus H 2009 Proceedings of the IEEE 97 1570

    [16]

    Yang H, LeFevre S W, Ryu C Y, Bao Z 2007 Appl. Phys. Lett.90 172116

    [17]

    Sirringhaus H, Brown P J, Friend R H, Nielsen M M, Bechgaard K, Langeveld-Voss B M W, Spiering A J H, Janssen R A J, Meijer E W, Herwig, P de Leeuw D M 1999 Nature (London) 401 685

    [18]

    Lan Y K, Huang C 2008 J. Phys. Chem. B 112 14857

    [19]

    Kline R J, McGehee M D, Toney M F 2006 Nature (London) 5 222

    [20]

    Jiang X M, Jia Q J, Zheng W L, Liu Peng, Xi D C, Jiang Z M, Wang X 2000 High Energy Phys. And Nucl. Phys. 24 424 (in Chinese) [姜晓明、贾全杰、郑文莉、刘 鹏、冼鼎昌、蒋最敏、王 迅 2000高能物理与核物理 24 424]

    [21]

    Cowley R A, Ryan T W 1987 J. Phys. D: Appl. Phys. 20 61

    [22]

    Gay J M, Stocker P, Rhemore F 1993 J. Appl. Phys. 73 816

    [23]

    Fuoss P H, Liang K S, Eisenberger P, ed. R Z Bachrach 1989 Plenum, New York

    [24]

    Zhang J D, Mo Z S 2009 University Chem. 24 1(in Chinese) [张吉东、莫志深 2009大学化学24 1]

    [25]

    Tian X Y, Zhao S L, Xu Z, Yao J F, Zhang F J, Jia Q J, Chen Y, Gong W, Fan X 2011 Acta Phys. Sin.60 027201 (in Chinese)[田雪雁、赵谡玲、徐 征、姚江峰、张福俊、贾全杰、陈 用、龚 伟、樊 星 2011 60 027201]

    [26]

    Kim D H, Park Y D, Jang Y, Yang H, Kim Y H, Han J I, Moon D G, Park S, Chang T, Chang C, Joo M, Ryu C Y 2005 Adv. Funct. Mater. 15 77

    [27]

    Loo Y 2007 AIChE Journal 531066

    [28]

    Kline R J, Mcgehee M D, Toney M F, 2006 Nature (London) 5 222

    [29]

    Chang J F, Sun B, Breiby D W, Nielsen M M, Sölling T I, Giles M, McCulloch I, Sirringhaus H 2004 Chem. Mater. 16 4772

    [30]

    Zen A, Pflaum J, Hirschmann S, Zhuang W, Jaiser F, Asawapirom U, Rabe R P, Scherf U, Neher D 2004 Adv. Funct. Mater. 14 757

  • [1]

    Z Bao, J A Rogers, H E Katz 1999 J. Mater. Chem.9 1895

    [2]

    Drury C J, Mutsaers C M J, Hart C M, Matters M, Leeuw D M de 1998 Appl. Phys. Lett. 73 108

    [3]

    Kawase T, Shimoda T, Newsome C, Sirringhaus H, Friend R H 2003 Thin Solid Films 438 279

    [4]

    Kawase T, Sirringhaus H, Friend R H, Shimoda T 2001 Adv. Mater. 13 1601

    [5]

    Crone B K, Dodabalapur A, Sarpeshkar R, Filas R W, Lin Y Y, Bao Z, O'Neill J H, Li W, Katz H E 2001 J. Appl. Phys. 89 5125

    [6]

    Steudel S, Myny K, Arkhipov V, Deibel C, Vusser S de, Genoe J, Heremans P 2005 Nat. Mater. 8 597

    [7]

    Gundlach D J 2007 Nat. Mater. 6 173

    [8]

    Chabinyc M L, Salleo A 2004 Chem. Mater. 16 4509

    [9]

    Wisnieff R 1998 Nature (London) 394 225

    [10]

    Yuan G C, Xu Z, Zhao S L, Zhang F J, Huang J Z, Huang J Y, Tian X Y, Xu X R 2008 Chin. Phys. B 17 3822

    [11]

    Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Song D D, Zhu H N, Li S Y, Huang J Y, Huang H, Xu X R 2008 Chin. Phys. B 17 1887

    [12]

    Bao Z, Dodabalapur A, Lovinger A J 1996 Appl. Phys. Lett. 69 4108

    [13]

    Ong B S, Wu Y, Liu P, Gardner S 2004 J. Am. Chem. Soc. 126 3378

    [14]

    Tian X Y, Xu Z, Zhao S L, Zhang F J, Xu X R, Yuan G C, Li J, Sun Q J 2010 Chin. Phys. B 19 018103

    [15]

    Sirringhaus H 2009 Proceedings of the IEEE 97 1570

    [16]

    Yang H, LeFevre S W, Ryu C Y, Bao Z 2007 Appl. Phys. Lett.90 172116

    [17]

    Sirringhaus H, Brown P J, Friend R H, Nielsen M M, Bechgaard K, Langeveld-Voss B M W, Spiering A J H, Janssen R A J, Meijer E W, Herwig, P de Leeuw D M 1999 Nature (London) 401 685

    [18]

    Lan Y K, Huang C 2008 J. Phys. Chem. B 112 14857

    [19]

    Kline R J, McGehee M D, Toney M F 2006 Nature (London) 5 222

    [20]

    Jiang X M, Jia Q J, Zheng W L, Liu Peng, Xi D C, Jiang Z M, Wang X 2000 High Energy Phys. And Nucl. Phys. 24 424 (in Chinese) [姜晓明、贾全杰、郑文莉、刘 鹏、冼鼎昌、蒋最敏、王 迅 2000高能物理与核物理 24 424]

    [21]

    Cowley R A, Ryan T W 1987 J. Phys. D: Appl. Phys. 20 61

    [22]

    Gay J M, Stocker P, Rhemore F 1993 J. Appl. Phys. 73 816

    [23]

    Fuoss P H, Liang K S, Eisenberger P, ed. R Z Bachrach 1989 Plenum, New York

    [24]

    Zhang J D, Mo Z S 2009 University Chem. 24 1(in Chinese) [张吉东、莫志深 2009大学化学24 1]

    [25]

    Tian X Y, Zhao S L, Xu Z, Yao J F, Zhang F J, Jia Q J, Chen Y, Gong W, Fan X 2011 Acta Phys. Sin.60 027201 (in Chinese)[田雪雁、赵谡玲、徐 征、姚江峰、张福俊、贾全杰、陈 用、龚 伟、樊 星 2011 60 027201]

    [26]

    Kim D H, Park Y D, Jang Y, Yang H, Kim Y H, Han J I, Moon D G, Park S, Chang T, Chang C, Joo M, Ryu C Y 2005 Adv. Funct. Mater. 15 77

    [27]

    Loo Y 2007 AIChE Journal 531066

    [28]

    Kline R J, Mcgehee M D, Toney M F, 2006 Nature (London) 5 222

    [29]

    Chang J F, Sun B, Breiby D W, Nielsen M M, Sölling T I, Giles M, McCulloch I, Sirringhaus H 2004 Chem. Mater. 16 4772

    [30]

    Zen A, Pflaum J, Hirschmann S, Zhuang W, Jaiser F, Asawapirom U, Rabe R P, Scherf U, Neher D 2004 Adv. Funct. Mater. 14 757

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出版历程
  • 收稿日期:  2010-04-04
  • 修回日期:  2010-05-23
  • 刊出日期:  2011-05-15

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