PCDTBT作为发光层的有机电致发光器件研究

陈海涛; 徐征; 赵谡玲; 赵玲; 刘志民; 高松; 杨一帆; 刘志方; 申崇渝; 徐叙瑢

doi:10.7498/aps.63.167802

摘要

使用PCDTBT作为发光层材料，制备了发光波长为705 nm的红色有机电致发光器件，其结构为ITO/PEDOT：PSS/PCDTBT/BCP/LiF/Al. 器件启亮电压为2 V，在9 V时器件达到最高亮度，为29000 cd/m2，最大电流效率为3.5 cd/A. 还研究了不同退火温度对器件发光性能的影响. 实验结果表明，退火温度为50℃时器件的性能最佳，其原因是此时既有利于溶剂挥发，又保持了分子结构的稳定性，而高温退火降低了PCDTBT的π-π堆积的有序性，从而使得器件性能下降.

关键词:

Abstract

Here we report a red organic electroluminescent device (OLED) with an emission wavelength at 705 nm in which PCDTBT is used as an emitting layer with the structure ITO/PEDOT:PSS/PCDTBT/BCP/LiF/Al. The device shows good performances such as an onset voltage of 2 V, a maximum brightness of 29000 cd/m2 at 9 V and a maximum current efficiency of 3.5 cd/A. The effects of annealing on the luminescent property of the device are studied at different temperatures. The experimental results suggest that the device presents the best performance at an annealing temperature of 50℃, then the performance decreases with annealing temperature increasing. We find that relatively low temperature annealing is beneficial to the solvent evaporation, and the high temperature annealing is conducible to reducing the coherence length of the π-π stacking, which results in the degradation of the performance of the device.

Keywords:

作者及机构信息

1.
北京交通大学发光与光信息技术教育部重点实验室, 北京 100044;

2.
北京交通大学光电子技术研究所, 北京 100044

基金项目: 国家重点基础研究发展计划（批准号：2010CB327704）、教育部博士点基金（批准号：20130009130001，20120009130005）、国家自然科学基金（批准号：51272022）、教育部新世纪优秀人才支持计划（批准号：NCET-10-0220）和中央高等学校基本科研基金（批准号：2012JBZ001）资助的课题.

Authors and contacts

1.
Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;

2.
Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China

Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB327704), the Doctoral Foundation of Ministry of Education, China (Grant Nos. 20130009130001, 20120009130005), the National Natural Science Foundation of China (Grant No. 51272022), the Program for the New Century Excellent Talents in University of Ministry of Education, China (Grant No. NCET-10-0220), and the Fundamental Scientific Research Foundation for the Central Universities of China (Grant No. 2012JBZ001).

参考文献

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[12]	Jang H S, Lee K H, Lee S J, Kim Y K 2013 Electron. Mater. Lett. 9 759
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[20]	Blouin N, Michaud A, Leclerc M 2007 Adv. Mater. 19 2295
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[25]	Zhao L, Zhao S L, Xu Z, Gong W, Yang Q Q, Fan X, Xu X R 2013 Appl. Phys. A 114 1361
[26]	Liu J, Guo T F, Yang Y 2002 J. Appl. Phys. 91 1595
[27]	Zhao D F, Gao X Q 1995 Dyes. Ind. 32 1(in Chinese) [赵德丰, 高欣钦 1995 染料工业 32 1]
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[29]	Sirringhaus H, Brown P J, Friend R H, Nielsen M M, Bechgaard K, Langeveld-Voss B M W, Spiering A J H, Janssen R A J, Meijer E W, Herwig P, Leeuw D M 1999 Nature 401 685

施引文献

[1]	Tang C W, van Slyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Burroughes J H, Bradley D D C, Brown A R, Marks R N, Mackay K, Friend R H, Burns P L, Holmes A B 1990 Nature 347 539
[3]	Baldo M A, O'Brien D F, You Y, Shoustikov A, Sibley S, Thompson M E, Forrest S R 1998 Nature 395 151
[4]	Liu N L, Ai N, Hu D G, Yu S F, Peng J B, Cao Y, Wang J 2011 Acta Phys. Sin. 60 087805 (in Chinese) [刘南柳, 艾娜, 胡典钢, 余树福, 彭俊彪, 曹镛, 王坚 2011 60 087805]
[5]	Forrest S R 2004 Nature 428 911
[6]	Cao G H, Qin D S, Guan M, Cao J S, Zeng Y P, Li J M 2008 Chin. Phys. B 17 1911
[7]	Uoyama H, Goushi K, Shizu K, Nomura H, Adachi C 2012 Nature 492 234
[8]	White M S, Kaltenbrunner M, Glowacki E D, Gutnichenko K, Kettlgruber G, Graz I, Aazou S, Ulbricht C, Egbe D A M, Miron M C, Major Z, Scharber M C, Sekitani T, Someya T, Bauer S, Sariciftci N S 2013 Nat. Photon. 7 811
[9]	Li N, Oida S, Tulevski G S, Han S J, Hannon J B, Sadana D K, Chen T C 2013 Nat. Commun. 4 2294
[10]	Chen C H, Klubek K P, Shi J 1999 U. S. Patent 5908581
[11]	Lee K H, Kim S M, Kim J Y, Kim Y K, Yoon S S 2010 Bull. Korean Chem. Soc. 31 2884
[12]	Jang H S, Lee K H, Lee S J, Kim Y K 2013 Electron. Mater. Lett. 9 759
[13]	Tsuboyama A, Iwawaki H, Furugori M, Mukaide T, Kamatani J, Igawa S, Moriyama T, Miura S, Takiguchi T, Okada S, Hoshino M, Ueno K 2003 J. Am. Chem. Soc. 125 12971
[14]	Lepeltier M, Dumur F, Wantz G, Vila N, Mbomekallé I, Bertin D, Gigmes D, Mayer C R 2013 J. Lumin. 143 145
[15]	Cho S, Seo J H, Park S H, Beaupre S, Leclerc M, Heeger A J 2010 Adv. Mater. 22 1253
[16]	Yang S P, Kong W G, Liu B Y, Zheng W Y, Li B M, Liu X H, Fu G S 2011 Chin. Phys. Lett. 28 128401
[17]	Moon J S, Jo J, Heeger A J 2012 Adv. Energy Mater. 2 304
[18]	Fang G, Wu J, Fu Y Y, Meng B, Xie Z Y, Guo S J 2013 Chin. Phys. Lett. 30 068801
[19]	Jha P, Koiry S P, Saxena V, Veerender P, Gusain A, Chauhan A K, Debnath A K, Aswal D K, Gupta S K 2013 Org. Electron. 14 2635
[20]	Blouin N, Michaud A, Leclerc M 2007 Adv. Mater. 19 2295
[21]	Gao L Y, Zhao S L, Xu Z, Zhang F J, Sun Q J, Zhang T H, Yan G, Xu X R 2011 Acta Phys. Sin. 60 037203 (in Chinese) [高利岩, 赵谡玲, 徐征, 张福俊, 孙钦军, 张天慧, 闫光, 徐叙瑢 2011 60 037203]
[22]	Tian X Y, Zhao S L, Xu Z, Yao J F, Zhang F J, Jia Q J, Chen Y, Gong W, Fan X 2011 Acta Phys. Sin. 60 057201 (in Chinese) [田雪雁, 赵谡玲, 徐征, 姚江峰, 张福俊, 贾全杰, 陈雨, 龚伟, 樊星 2011 60 057201]
[23]	Beiley Z M, Hoke E T, Noriega R, Dacuña J, Burkhard G F, Bartelt J A, Salleo A, Toney M F, McGehee M D 2011 Adv. Energy Mater. 1 954
[24]	Gusain A, Saxena V,Veerender P, Jha P, Koiry S P, Chauhan A K, Aswal D K, Gupta S K 2013 Proceedings of the 57th DAE Solid State Physics Symposium 2012 Bombay, India, December 3-7, 2012 p776
[25]	Zhao L, Zhao S L, Xu Z, Gong W, Yang Q Q, Fan X, Xu X R 2013 Appl. Phys. A 114 1361
[26]	Liu J, Guo T F, Yang Y 2002 J. Appl. Phys. 91 1595
[27]	Zhao D F, Gao X Q 1995 Dyes. Ind. 32 1(in Chinese) [赵德丰, 高欣钦 1995 染料工业 32 1]
[28]	Wang T, Pearson A J, Dunbar A D F, Staniec P A, Watters D C, Yi H, Ryan A J, Jones R A L, Iraqi A, Lidzey D G 2012 Adv. Funct. Mater. 22 1399
[29]	Sirringhaus H, Brown P J, Friend R H, Nielsen M M, Bechgaard K, Langeveld-Voss B M W, Spiering A J H, Janssen R A J, Meijer E W, Herwig P, Leeuw D M 1999 Nature 401 685

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