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According to the ratios of the peak-values of photocurrents arising separately during the single Cs activation and during the Cs-O activation for negative electron affinity(NEA) GaAs photocathode, and the theoretical energy distributions of the photoelectrons passing separately through the single and the double potential barriers, a new method of evaluating the surface potential barrier parameters of NEA GaAs photocathode is presented. The results obtained by this method accord well with the double-dipole model theory and are in agreement with the results by fitting the experimental electrons energy distribution curve. The method is simple and efficave, which enriches the approaches to the evaluation of activation effect and surface characteristic of NEA GaAs photocathodes without increasing other test means.
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Keywords:
- GaAs /
- photocathode /
- surface potential barrier /
- energy distribution
[1] Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2009 Acta Phys. Sin. 58 5842 (in Chinese) [邹继军、常本康、杨智、张益军、乔建良物 2009 58 5842]
[2] Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[3] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese)[邹继军、常本康、杨 智 2007 56 2992]
[4] Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese)[牛 军、杨 智、常本康、乔建良、张益军 2009 58 5002]
[5] Su C Y, Chye P W, Pianetta P, Lindau I, Spicer W E 1979 Surface Scienc 86 894
[6] Su C Y, Lindau I, Spicer W E 1982 Chem. Phys. Lett. 87 523
[7] Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413
[8] Zou J J 2007 Theory and characterization techniques of GaAs photocathode(Nanjing: Nanjing University of Science and Technology) p28 (in Chinese)[邹继军 2007 GaAs光电阴极理论及其表征技术研究 (南京:南京理工大学)第28页]
[9] Fisher D G, Enstrom R E, Escher J S, Williams B F 1972 J. Appl. Phys. 43 3815
[10] Vergara G, Herrera-Gómez A, Spicer W E 1999 Surface Sciences 436 83
[11] Bartelink D J, Moll J L, Meyer N L 1963 Phys. Rev. 130 972
[12] Williams B F, Simon R E 1967 Phys. Rev. Lett. 18 85
[13] Escher J S, Schade H 1973 J. Appl. Phys. 44 5309
[14] Herrera-Gómez A, Spicer W E 1993 Proc. SPIE 2022 51
[15] Wang H M, Zhang Y F 2005 Acta Phys. Sin. 54 2226(in Chinese)[王洪梅、张亚非 2005 54 2226]
[16] Lui W W, M Fukuma 1986 J. Appl. Phys. 60 1555
[17] Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2009 J. Appl. Phys.105 013714
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[1] Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2009 Acta Phys. Sin. 58 5842 (in Chinese) [邹继军、常本康、杨智、张益军、乔建良物 2009 58 5842]
[2] Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[3] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese)[邹继军、常本康、杨 智 2007 56 2992]
[4] Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese)[牛 军、杨 智、常本康、乔建良、张益军 2009 58 5002]
[5] Su C Y, Chye P W, Pianetta P, Lindau I, Spicer W E 1979 Surface Scienc 86 894
[6] Su C Y, Lindau I, Spicer W E 1982 Chem. Phys. Lett. 87 523
[7] Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413
[8] Zou J J 2007 Theory and characterization techniques of GaAs photocathode(Nanjing: Nanjing University of Science and Technology) p28 (in Chinese)[邹继军 2007 GaAs光电阴极理论及其表征技术研究 (南京:南京理工大学)第28页]
[9] Fisher D G, Enstrom R E, Escher J S, Williams B F 1972 J. Appl. Phys. 43 3815
[10] Vergara G, Herrera-Gómez A, Spicer W E 1999 Surface Sciences 436 83
[11] Bartelink D J, Moll J L, Meyer N L 1963 Phys. Rev. 130 972
[12] Williams B F, Simon R E 1967 Phys. Rev. Lett. 18 85
[13] Escher J S, Schade H 1973 J. Appl. Phys. 44 5309
[14] Herrera-Gómez A, Spicer W E 1993 Proc. SPIE 2022 51
[15] Wang H M, Zhang Y F 2005 Acta Phys. Sin. 54 2226(in Chinese)[王洪梅、张亚非 2005 54 2226]
[16] Lui W W, M Fukuma 1986 J. Appl. Phys. 60 1555
[17] Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2009 J. Appl. Phys.105 013714
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