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Time-of-flight mass spectroscopy and quartz crystal oscillator are used to analyze the evaporation properties of the reservoir oxide cathode coated nano-particle carbonates in decomposing and activating process at different temperatures. The results show that the purity of the reservoir oxide cathode is high. It can fully be decomposed and activated in the conventional technologic process with more freed Ba and lower evaporation rate, compared with the conventional reservoir oxide cathode.
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Keywords:
- time-of-fight mass spectroscopy /
- quartz crystal oscillation /
- nano-particle carbonates /
- reservoir oxide cathode
[1] Poret F, Roquais J M 2005 Appl. Sur. Sci. 251 31
[2] Wang X X, Liao X H, Luo J R, Zhao Q L 2006 J. Electron. Inf. Tech. 28 2179(in Chinese)[王小霞、廖显恒、罗积润、赵庆兰 2006 电子与信息学报 28 2179]
[3] Wang X X, Liao X H, Luo J R, Zhao Q L 2008 Acta Phys. Sin. 57 1924 (in Chinese)[王小霞、廖显恒、罗积润、赵庆兰 2008 57 1924]
[4] Wang Q F, Wang X X, Luo J R, Zhao Q L 2010 Acta Phys. Sin. 59 7375(in Chinese)[王其富、王小霞、罗积润、赵青兰 2010 59 7375]
[5] Becker J A 1929 Phys. Rev. 34 1323
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[7] Gren M C, Skinner H B, Tuck H A 1981 Appl. Surf. Sci. 8 13
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[9] Wooren L A, Ruehie A E 1955 J. Appl. Phys. 26 44
[10] Mooke G E, Aeeison H W 1950 Phys. Rev. 77 246
[11] Florio J V 1963 J. Appl. Phys. 34 200
[12] Leverton W F, Sepherd W G 1952 J. App.l Phys. 23 787
[13] Dudley K 1961 Vacuum 1 154
[14] Verhoeven A Th, Vandoveren H 1981 Appl. Surf. Sci. 8 95
[15] Liu Y W, Tian H, Han Y, Zhu H, Li Y T, Xu Z Y, Meng M F, Yi H X, Lu Y X, Zhang H L, Liu P K 2009 Acta Phys. Sin. 58 8635 (in Chinese)[刘燕文、田 宏、韩 勇、朱 虹、李玉涛、徐振英、孟鸣风、易红霞、陆玉新、张洪来、刘濮鲲 2009 58 8635]
[16] Yin S Y, Zhang H L, Wang Y, Liu Y W, Tian H, Zhang M C, Li Y T, Ding Y G 2006 J. Vac. Sci. Technol. 26 70 (in Chinese)[阴生毅、张洪来、王 宇、刘燕文、田 宏、张明晨、李玉涛、丁耀根 2006 真空科学与技术学报 26 70]
[17] Wiley W C, Mclaren I H 1955 Rev. Sci. Instrum. 26 1150
[18] Μαсникоб О Ю,Ущакоб А Б 2003 Availability Thermionic Cathodes (Moscow: Moscow College of Technology Physics) (in Russian)
[19] Wang X X, Liao X H, Luo J R, Zhao Q L, Zhang X W 2009 Acta Phys. Sin. 58 1280 (in Chinese)[王小霞、廖显恒、罗积润、赵庆兰、张晓伟 2009 58 1280]
[20] Xue Z Q, Liu W M 2003 Nanoeletronics (Beijing: Publishing House of Electronics Industry) (in Chinese)[薛增泉、刘惟敏 2003 纳米电子学 (北京: 电子工业出版社)]
[21] Zhang E Q 1974 Acta Phys. Sin. 23 341 (in Chinese)[张恩虬 1974 23 341]
[22] Zhang E Q 1976 Acta Phys. Sin. 25 23 (in Chinese)[张恩虬 1976 25 23]
[23] Weon B M, Dam A van, Park G S, Kim I W, Seol S K, Kwon Y B, Hwu Y, Tsai W L, Ruterana P 2003 J. Vac. Sci. Technol. B 21 2184
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[1] Poret F, Roquais J M 2005 Appl. Sur. Sci. 251 31
[2] Wang X X, Liao X H, Luo J R, Zhao Q L 2006 J. Electron. Inf. Tech. 28 2179(in Chinese)[王小霞、廖显恒、罗积润、赵庆兰 2006 电子与信息学报 28 2179]
[3] Wang X X, Liao X H, Luo J R, Zhao Q L 2008 Acta Phys. Sin. 57 1924 (in Chinese)[王小霞、廖显恒、罗积润、赵庆兰 2008 57 1924]
[4] Wang Q F, Wang X X, Luo J R, Zhao Q L 2010 Acta Phys. Sin. 59 7375(in Chinese)[王其富、王小霞、罗积润、赵青兰 2010 59 7375]
[5] Becker J A 1929 Phys. Rev. 34 1323
[6] Brodie I, Jenbinsand R O, Trodden W G 1959 J. Electr. Contr. 6 149
[7] Gren M C, Skinner H B, Tuck H A 1981 Appl. Surf. Sci. 8 13
[8] Guo W X 1984 J. Electron. Inf. Tech. 6 166 (in Chinese)[郭文湘 1984 电子与信息学报 6 166]
[9] Wooren L A, Ruehie A E 1955 J. Appl. Phys. 26 44
[10] Mooke G E, Aeeison H W 1950 Phys. Rev. 77 246
[11] Florio J V 1963 J. Appl. Phys. 34 200
[12] Leverton W F, Sepherd W G 1952 J. App.l Phys. 23 787
[13] Dudley K 1961 Vacuum 1 154
[14] Verhoeven A Th, Vandoveren H 1981 Appl. Surf. Sci. 8 95
[15] Liu Y W, Tian H, Han Y, Zhu H, Li Y T, Xu Z Y, Meng M F, Yi H X, Lu Y X, Zhang H L, Liu P K 2009 Acta Phys. Sin. 58 8635 (in Chinese)[刘燕文、田 宏、韩 勇、朱 虹、李玉涛、徐振英、孟鸣风、易红霞、陆玉新、张洪来、刘濮鲲 2009 58 8635]
[16] Yin S Y, Zhang H L, Wang Y, Liu Y W, Tian H, Zhang M C, Li Y T, Ding Y G 2006 J. Vac. Sci. Technol. 26 70 (in Chinese)[阴生毅、张洪来、王 宇、刘燕文、田 宏、张明晨、李玉涛、丁耀根 2006 真空科学与技术学报 26 70]
[17] Wiley W C, Mclaren I H 1955 Rev. Sci. Instrum. 26 1150
[18] Μαсникоб О Ю,Ущакоб А Б 2003 Availability Thermionic Cathodes (Moscow: Moscow College of Technology Physics) (in Russian)
[19] Wang X X, Liao X H, Luo J R, Zhao Q L, Zhang X W 2009 Acta Phys. Sin. 58 1280 (in Chinese)[王小霞、廖显恒、罗积润、赵庆兰、张晓伟 2009 58 1280]
[20] Xue Z Q, Liu W M 2003 Nanoeletronics (Beijing: Publishing House of Electronics Industry) (in Chinese)[薛增泉、刘惟敏 2003 纳米电子学 (北京: 电子工业出版社)]
[21] Zhang E Q 1974 Acta Phys. Sin. 23 341 (in Chinese)[张恩虬 1974 23 341]
[22] Zhang E Q 1976 Acta Phys. Sin. 25 23 (in Chinese)[张恩虬 1976 25 23]
[23] Weon B M, Dam A van, Park G S, Kim I W, Seol S K, Kwon Y B, Hwu Y, Tsai W L, Ruterana P 2003 J. Vac. Sci. Technol. B 21 2184
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