微结构对Eu掺杂Bi4Ti3O12铁电薄膜铁电性能的影响

吕业刚; 梁晓琳; 谭永宏; 郑学军; 龚跃球; 何林

doi:10.7498/aps.60.027701

摘要

采用金属有机物分解法在Pt/Ti/Si(111)基底上制备了退火温度分别为600℃,650℃,700℃的Bi3.15Eu0.85Ti3O12(BET)铁电薄膜,并对其结构及铁电性能进行了测试,再使用扫描探针显微镜对BET薄膜的电畴翻转进行了实时观测.BET薄膜c畴发生180°畴变的最小电压为+6V,而r畴由于其高四方性,即使极化电压增至+12V也不会发生翻转.薄膜的铁电性主要源于c畴的极化,随着退火温度的升高,c畴的区域面积增加,BET薄膜的剩余极化强度随之增大.退火温度为700℃的BET薄膜剩余极化强度达到84μC/cm2.

关键词:

Abstract

Eu-doped bismuth titanate Bi3.15Eu0.85Ti3O12 (BET) ferroelectric thin film was prepared on the Pt/Ti/Si(111) substrates by metal-organic decomposition (MOD) at different annealing temperatures of 600℃, 650℃ and 700℃. The structure and ferroelectric properties of BET thin film were analyzed. The nanoscale domain switching was investigated by scanning probe microscopy (SPM) via direct observation. When the polarizing voltage increases to +6V, the ferroelectric c-domain suffers 180° domain switching. The ferroelectric r-domain can not be reversed due to its highly tetragonal structure even if the polarized voltage value increases to +12V. The ferroelectric properties of the BET thin films are dependent on the polarization of ferroelectric c-domain. With the increasing annealing temperature, the area of c-domain becomes larger, and the remnant polarization (2Pr) values of BET films increase. The value of 2Pr reaches 84μC/cm for BET thin film annealed at the temperature of 700℃.

Keywords:

作者及机构信息

(1)湖南科技学院电子工程系,永州 425100; (2)湖南科技学院电子工程系,永州 425100;湘潭大学材料与光电物理学院,湘潭 411105; (3)湘潭大学材料与光电物理学院,湘潭 411105

基金项目: 湖南永州市科技局(批准号:永科发[2009]20号)资助的课题.

Authors and contacts

(1)Department of Electronic Engineering, Hunan University of Science and Engineering, Yongzhou 425100, China; (2)Department of Electronic Engineering, Hunan University of Science and Engineering, Yongzhou 425100, China;Faculty of Material and Photoelectronic Physics, Xiangtan University, Xiangtan 411105, China; (3)Faculty of Material and Photoelectronic Physics, Xiangtan University, Xiangtan 411105, China

参考文献

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施引文献

[1]	Funakubo H, Watanabe T, Kojima T, Sakai T, Noguchi Y, Miyayama M, Osada M, Kakihana M, Saito K 2003 J. Cryst. Growth 248 180
[2]	Lee H N, Hesse D, Zakharov N 2002 Science 296 2006
[3]	[刘洪、蒲朝辉、龚小刚、王志红、黄惠东、李言荣、肖定金、朱建国 2006 55 6123]
[4]	Zhong X L, Wang J B, Zheng X J, Zhou Y C, Yang G W 2004 Appl. Phys. Lett. 85 5661
[5]	Wu Y Y, Wang X H, Li L T 2010 Chin. Phys. B 19 037701
[6]	Fu C, Huang Z, Li J, Guo D 2008 Sci. China Ser. E 51 1439
[7]	Wu X M, Chen H, Zhai Y, Lu X M, Liu Y F, Zhu J S 2010 Chin. Phys. B 19 036802
[8]	Chon U, Jang H M, Kim M G, Chang C H 2002 Phys. Rev. Lett. 89 087601
[9]	Lim K T, Kim K T, Kim D P, Kim C 2004 Thin Solid Films 447 337
[10]	Liu H, Pu C H, Gong X G, Wang Z H, Huang H D, Li Y R, Xiao D Q, Zhu J G 2006 Acta Phys. Sin. 55 6123 (in Chinese)
[11]	Zeng H R, Yu H F, Chu R Q, Li G R, Yin Q R, Tang X G 2005 Acta Phys. Sin. 54 1437 (in Chinese) [曾华荣、余寒峰、初瑞清、李国荣、殷庆瑞、唐新桂 2005 54 1437]
[12]	Anbusathaiah V, Nagarajan V, Aggarwal S 2006 Appl. Phys. Lett. 89 132912
[13]	Wang L H, Yu J, Liu F, Zheng C D, Li J, Wang Y B, Gao J X, Wang Z H, Zeng H Z, Zhao S L 2006 Acta Phys. Sin. 55 2590 (in Chinese) [王龙海、于军、刘峰、郑朝丹、李佳、王耘波、高峻雄、王志红、曾慧中、赵素玲 2006 〖13] Tan C B, Zhong X L, Wang J B, Liao M, Zhon Y C, Pan W 2007 Acta Phys. Sin. 56 6084 (in Chinese) [谭丛兵、钟向丽、王金斌、廖敏、周益春、潘伟 2007 56 6084]
[14]	Oh Y N, Yoon S G 2005 Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23 1029
[15]	Yau C Y, Palan R, Tran K, Buchanan R C 2005 Appl. Phys. Lett. 86 032907
[16]	Guo D Y, Wang Y B, Yu J, Gao J X, Li M Y 2006 Acta Phys. Sin. 55 5551 (in Chinese) [郭冬云、王耘波、于军、高俊雄、李美亚 2006 55 5551]
[17]	Zheng X J, He L, Zhou Y C, Tang M H 2006 Appl. Phys. Lett. 89 252908
[18]	Kelman M B, Schloss L F, McIntyre P C, Hendrix B C, Bilodeau S M, Roeder J F 2002 Appl. Phys. Lett. 80 1258
[19]	Chen X, Zhu W, Tan O K, Yao X 2002 Mater. Chem. Phys. 75 90
[20]	Cheng S Y, Ho N J, Lu H Y 2008 J. Am. Ceram. Soc. 91 3721

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