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Under different annealing treatment conditions, the low temperature PL properties of unintentionally doped 4H-SiC epilayer have been studied by photoluminescence (PL) technique at 10 K. The results show that there are three emission peaks in the range from 370 nm to 400 nm and the maximum energy is about 3.26 eV, which is in accordance with the energy gaps (Eg) of 4H-SiC at room temperature. The 386 nm and 388 nm peaks (corresponding to ~3.21 eV and ~3.19 eV, respectively) are related with N impurity. When keeping annealing time at 30 min, the PL intensity of 386 nm and 388 nm peaks increases and then decreases with the annealing temperature increasing and reaches a maximum at 1573 K. The PL at 386 nm and 388nm change in quite the same manner with annealing time during isothermal annealing at temperature of 1573 K, whereas the difference is small. With the same annealing treatment, the low temperature PL results of 386 nm and 388 nm coincide with that of intrinsic defects in unintentionally doped 4H-SiC, which results from the interaction of infinitesimal disturbance potential energy between N impurity and native defects.
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Keywords:
- photoluminescence /
- annealing treatment /
- energy level /
- 4H-SiC
[1] Sriram S, Ward A, Henning J, Allen S T 2005 MRS Bull. 30 308
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[5] Alfieri G, Kimoto T 2007 J. Phys. Condens. Matter 19 306204
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[7] Srman E, Son N T, Chen W M, Kordina O, Hallin C, Janzén E 2000 Phys. Rev. B 61 2613
[8] Zvanut M E, Tol J van 2007 Phys. B 401-402 73
[9] Young C F, Xie K, Poindexter E H, Gerardi G J, Keeble D J 1997 Appl. phys. Lett. 70 1858
[10] Gerstmann U, Rauls E, Greulich-Weber S, Kalabukhova E N, Savchenko D V, Poppl A, Mauri F 2007 Mater. Sci. Forum 556 391
[11] Goldberg Y, Levinshtein M E, Rumyantsev S L 2001 Eds. Levinshtein M E, Rumyantsev S L, Shur M S, John Wiley & Sons, Inc., New York 93
[12] Yang Y T, Han R, Wang P 2008 Chin. Phys. B 17 3459
[13] Gao X, Sun G S, Li J M, Zhao W S, Wang L, Zhang Y X, Zeng Y P 2005 Chin. J. Semicond. 26 936 (in Chinese) [高 欣、 孙国胜、 李晋闽、 赵万顺、 王 雷、 张永兴、 曾一平 2005 半导体学报 26 936]
[14] Ivanov V Y, Godlewski M, Kalabukhova E N, Dimitriadis C A, Zekentes K 2008 Opt. Mater. 30 746
[15] Cheng P, Zhang Y M, Zhang Y M, Wang Y H, Guo H 2010 Acta Phys . Sin. 59 3542 (in Chinese) [程 萍、 张玉明、 张义门、 王悦湖、 郭 辉 2010 59 3542]
[16] Cheng P, Zhang Y M, Zhang Y M, Guo H 2010 Chin. Phys. B 19 097802
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[1] Sriram S, Ward A, Henning J, Allen S T 2005 MRS Bull. 30 308
[2] Son N T, Carlsson P, Gllstrm A, Magnusson B, Janzén E 2007 Phys. B 401 67
[3] Janzén E, Son N T, Magnusson B, Ellison A 2006 Microelectron. Eng. 83 130
[4] Carlos W E, Garces N Y, Glaser E R 2006 Phys. Rev. B 74 235201
[5] Alfieri G, Kimoto T 2007 J. Phys. Condens. Matter 19 306204
[6] Son N T, Chen W M, Lindstrm J L, Monemar B, Janzén E 1999 Phys. Scr. T79 162 46
[7] Srman E, Son N T, Chen W M, Kordina O, Hallin C, Janzén E 2000 Phys. Rev. B 61 2613
[8] Zvanut M E, Tol J van 2007 Phys. B 401-402 73
[9] Young C F, Xie K, Poindexter E H, Gerardi G J, Keeble D J 1997 Appl. phys. Lett. 70 1858
[10] Gerstmann U, Rauls E, Greulich-Weber S, Kalabukhova E N, Savchenko D V, Poppl A, Mauri F 2007 Mater. Sci. Forum 556 391
[11] Goldberg Y, Levinshtein M E, Rumyantsev S L 2001 Eds. Levinshtein M E, Rumyantsev S L, Shur M S, John Wiley & Sons, Inc., New York 93
[12] Yang Y T, Han R, Wang P 2008 Chin. Phys. B 17 3459
[13] Gao X, Sun G S, Li J M, Zhao W S, Wang L, Zhang Y X, Zeng Y P 2005 Chin. J. Semicond. 26 936 (in Chinese) [高 欣、 孙国胜、 李晋闽、 赵万顺、 王 雷、 张永兴、 曾一平 2005 半导体学报 26 936]
[14] Ivanov V Y, Godlewski M, Kalabukhova E N, Dimitriadis C A, Zekentes K 2008 Opt. Mater. 30 746
[15] Cheng P, Zhang Y M, Zhang Y M, Wang Y H, Guo H 2010 Acta Phys . Sin. 59 3542 (in Chinese) [程 萍、 张玉明、 张义门、 王悦湖、 郭 辉 2010 59 3542]
[16] Cheng P, Zhang Y M, Zhang Y M, Guo H 2010 Chin. Phys. B 19 097802
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