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利用磁控溅射方法在不同溅射压强条件下制备了TiN/SiNx纳米多层膜.多层膜的微观结构及力学性能分别用X射线衍射仪、原子力显微镜及纳米压痕仪来表征.结果表明随着溅射压强的增大,多层膜的界面变模糊,TiN层的择优取向由(200)晶面过渡到(111)晶面.与此同时,多层膜的表面粗糙度增大,硬度和弹性模量随溅射压强的增大而减小.多层膜力学性能的差异主要是由于薄膜的周期性结构及致密度存在差异所致.
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关键词:
- TiN/SiNx多层膜 /
- 界面宽度 /
- 表面形貌
TiN/SiNx multilayer coatings were deposited at different deposition pressure by reactive magnetron sputtering. The microstructure and mechanical properties of the coatings were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM) and nanoindentation. The results showed that the layer structure became rough and the preferred orientation of TiN transferred from (200) to (111) plane with the increase of deposition pressure. Surface roughness of the coatings increased but the hardness and elastic modulus decreased with increasing deposition pressure. The variation of mechanical properties are attributed to the changes in layer structures and the densities of the coatings.-
Keywords:
- TiN/SiNx multilayer coatings /
- interface width /
- topography
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[2] Veprek S, Niederhofer A, Moto K, Bolom T, Mannling H D, Nesladek P, Dollinger G, Bergmaier A 2000 Surf. Coat. Technol. 133-134 152
[3] Yu L H, Dong S R, Xu J H, Li G Y 2008 Acta Phy. Sin. 57 7063 (in Chinese) [喻利花、董师润、许俊华、李戈扬 2008 57 7063]
[4] Kong M, Wei L, Dong Y S, Li G Y 2006 Acta Phy. Sin. 55 0770 (in Chinese) [孔 明、魏 仑、董云杉、李戈扬 2006 物 理学报 55 0770] 〖5] Xu J H, Yu L H, Azuma Y, Fujimoto T, Umehara H, Kojima I 2002 Appl. Phys. Lett. 81 4139
[5] Hu X P, Zhang H J, Dai J W, Li G Y, Gu M Y 2005 J. Vac. Sci. Technol. A 23 114
[6] Soderberg H, Odén M, Larsson T, Hultman L, Molina-Aldareguia J M 2006 Appl. Phys. Lett. 88 191902
[7] Jonathan F S, Feng H, John A B 2005 J. Vac. Sci. Technol. A 23 78
[8] Huang J H, Lau K W, Yu G P 2005 Surf. Coat. Technol. 191 17
[9] Musil J, Polakova H, Suna J, Vlcek J 2004 Surf. Coat. Technol. 177-178 289
[10] Yang B C, Wang W S 1994 Thin Film Physics and Technology (Chengdu: University of Electronic Science and Technology Press) pp60—103 (in Chinese) [杨邦朝、王文生 1994 薄膜物理与技术 (成都:电子科技大学出版社) 第60—103页]
[11] Wainfan N, Parratt L G 1960 J. Appl. Phys. 31 1331
[12] Zheng W T 2004 Thin Film Materials and Technology (Beijing: Chemical Industry Press) pp47—134 (in Chinese) 郑伟涛 2004 薄膜材料与薄膜技术 (北京:化学工业出版社) 第47—134
[13] Pelleg J, Zevin L Z, Lungo S 1991 Thin Solid Films 197 117
[14] Greene, J E, Sundgren J-E, Hultman L, Petrov I, Bergstrom D B 1995 Appl. Phys. Lett. 67 2928
[15] Chu X, Barnett S A 1995 J. Appl. Phys. 77 4403
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[1] Derflinger V, Brandle H, Zimmermann H 1999 Surf. Coat. Technol. 113 286
[2] Veprek S, Niederhofer A, Moto K, Bolom T, Mannling H D, Nesladek P, Dollinger G, Bergmaier A 2000 Surf. Coat. Technol. 133-134 152
[3] Yu L H, Dong S R, Xu J H, Li G Y 2008 Acta Phy. Sin. 57 7063 (in Chinese) [喻利花、董师润、许俊华、李戈扬 2008 57 7063]
[4] Kong M, Wei L, Dong Y S, Li G Y 2006 Acta Phy. Sin. 55 0770 (in Chinese) [孔 明、魏 仑、董云杉、李戈扬 2006 物 理学报 55 0770] 〖5] Xu J H, Yu L H, Azuma Y, Fujimoto T, Umehara H, Kojima I 2002 Appl. Phys. Lett. 81 4139
[5] Hu X P, Zhang H J, Dai J W, Li G Y, Gu M Y 2005 J. Vac. Sci. Technol. A 23 114
[6] Soderberg H, Odén M, Larsson T, Hultman L, Molina-Aldareguia J M 2006 Appl. Phys. Lett. 88 191902
[7] Jonathan F S, Feng H, John A B 2005 J. Vac. Sci. Technol. A 23 78
[8] Huang J H, Lau K W, Yu G P 2005 Surf. Coat. Technol. 191 17
[9] Musil J, Polakova H, Suna J, Vlcek J 2004 Surf. Coat. Technol. 177-178 289
[10] Yang B C, Wang W S 1994 Thin Film Physics and Technology (Chengdu: University of Electronic Science and Technology Press) pp60—103 (in Chinese) [杨邦朝、王文生 1994 薄膜物理与技术 (成都:电子科技大学出版社) 第60—103页]
[11] Wainfan N, Parratt L G 1960 J. Appl. Phys. 31 1331
[12] Zheng W T 2004 Thin Film Materials and Technology (Beijing: Chemical Industry Press) pp47—134 (in Chinese) 郑伟涛 2004 薄膜材料与薄膜技术 (北京:化学工业出版社) 第47—134
[13] Pelleg J, Zevin L Z, Lungo S 1991 Thin Solid Films 197 117
[14] Greene, J E, Sundgren J-E, Hultman L, Petrov I, Bergstrom D B 1995 Appl. Phys. Lett. 67 2928
[15] Chu X, Barnett S A 1995 J. Appl. Phys. 77 4403
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