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利用近共振激光驻波场操纵中性原子实现纳米量级条纹沉积技术是一种新型的研制纳米结构长度传递标准的方法,采用了一种新颖的方法,通过预准直孔的设定,将原子束在空间分成三部分,利用中间部分的原子束和近共振激光驻波场相互作用,在激光驻波场辐射压力作用下使原子按照特定周期沉积在基板上,从而实现纳米条纹的制作.利用两侧部分的原子束与探测激光束相互作用,通过其感生荧光来监测中间部分原子束沉积过程中的准直效果,从而为原子的沉积过程提供实时的原子束特性监测.最后对纳米沉积条纹在经由三狭缝预准直结构作用前后的效果进行了三维仿真,结果表明,未采用该三狭缝预准直结构时,纳米沉积条纹的半高宽为32 nm,对比度为8∶1,而采用该三狭缝预准直结构之后,纳米沉积条纹的半高宽为6.2 nm,对比度为28∶1,大大提高了纳米沉积条纹的质量.The technology of laser-focused atomic deposition can be used to develop the nanostructure transfer standard of length. In this paper, a novel method is used to fabricate the nanometer structure through chromium atomic deposition. By the designed pre-collimated hole with three apertures, the chromium atomic beam may be divided into three parts. The middle part is for the atom beam to react with the standing wave and the deposition on the substrate with periodic distribution and the other two parts which can not be blocked by the substrate are for the atom beam to react with the detecting laser beam, and can be used to inspect the characteristic of atomic beam. This can provide some guidance for the progress of deposition. The simulatiion results show that the full width of half maximum is 6.2 nm and the contrast is 28:1 by using this special pre-collimated hole. On the other hand, the full width of half maximum and contrast are 32 nm and 8∶1 without using this special hole.
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Keywords:
- atom lithography /
- dipole force /
- atomic deposition
[1] Anderson W R, Brandley C C,McClelland J J, Celotta R J 1999 Phys. Rev. A 59 2476
[2] Timp G L, Behrenger R L, Tennant D M, Cumminghan J E, Prentiss M, Berqqren K K 1992 Phys. Rev. Lett. 69 1636
[3] McClelland J J, Scholten R E, Palm E C, Celatta R J 1993 Science 262 877
[4] McGowan R W, Giltner D M, Lee S A 1996 Opt. Lett. 20 2535
[5] Rapol U D, Krishna A, Wasan A 2004 Eur. Phys. J. D 29 409
[6] Myszkiewicz G, Hohlfeld J, Toonen A J 2004 Appl. Phys. Lett. 85 3842
[7] Steven J R, Karen M B, Siu A L 2004 Phys. Revi. A 69 063404
[8] Zheng C L, Li T B, Ma Y, Ma S S, Zhang B W 2006 Atca Phys. Sin. 55 4528 (in Chinese) [郑春兰、李同保、马 艳、马姗姗、张宝武 2006 55 4528]
[9] Rostami A, Rahmani A 2006 Micoelectron. J. 37 57
[10] Zeng Q L 2000 Ms. Thesis (Shanghai: ShangHai Institute Of Optics and Fine Mechanics, Chinese Academy Of Sciences) (in Chinese)[曾庆林 2000 硕士学位论文(上海: 中科院上海光学精密机械研究所)\]
[11] Chen Y P, Chen X N, Li Z 2003 Micronano. Tech. 7 546 (in Chinese) [陈元培、陈旭南、李 展 2003 微纳电子技术 7 546\] Wang J 1999 Ph. Dessertation (WuHan: Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences) (in Chinese)〖王 谨 1999 博士学位论文(武汉:中科院武汉物理与数学研究所)\]
[12] Celotta R J, Gupta R, Scholten R E. 1996 J. Appl. Phys. 79 607
[13] Drodofsky U, Stuhler J, Brezger B 1997 Micr. Engi. 35 285
[14] Ma Y, Zhang B W, Zheng C L, Ma S S, Li F S, Wang Z S, Li T B 2006 Atca Phys. Sin. 55 4086 (in Chinese) [马 艳、张宝武、郑春兰、马姗姗、李佛生、王占山、李同保 2006 55 4086\]
[15] Ma Y, Zhang B W, Zheng C L, Ma S S, Li F S, Wang Z S, Li T B 2007 Acta Photonica Sinica 36 201
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[1] Anderson W R, Brandley C C,McClelland J J, Celotta R J 1999 Phys. Rev. A 59 2476
[2] Timp G L, Behrenger R L, Tennant D M, Cumminghan J E, Prentiss M, Berqqren K K 1992 Phys. Rev. Lett. 69 1636
[3] McClelland J J, Scholten R E, Palm E C, Celatta R J 1993 Science 262 877
[4] McGowan R W, Giltner D M, Lee S A 1996 Opt. Lett. 20 2535
[5] Rapol U D, Krishna A, Wasan A 2004 Eur. Phys. J. D 29 409
[6] Myszkiewicz G, Hohlfeld J, Toonen A J 2004 Appl. Phys. Lett. 85 3842
[7] Steven J R, Karen M B, Siu A L 2004 Phys. Revi. A 69 063404
[8] Zheng C L, Li T B, Ma Y, Ma S S, Zhang B W 2006 Atca Phys. Sin. 55 4528 (in Chinese) [郑春兰、李同保、马 艳、马姗姗、张宝武 2006 55 4528]
[9] Rostami A, Rahmani A 2006 Micoelectron. J. 37 57
[10] Zeng Q L 2000 Ms. Thesis (Shanghai: ShangHai Institute Of Optics and Fine Mechanics, Chinese Academy Of Sciences) (in Chinese)[曾庆林 2000 硕士学位论文(上海: 中科院上海光学精密机械研究所)\]
[11] Chen Y P, Chen X N, Li Z 2003 Micronano. Tech. 7 546 (in Chinese) [陈元培、陈旭南、李 展 2003 微纳电子技术 7 546\] Wang J 1999 Ph. Dessertation (WuHan: Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences) (in Chinese)〖王 谨 1999 博士学位论文(武汉:中科院武汉物理与数学研究所)\]
[12] Celotta R J, Gupta R, Scholten R E. 1996 J. Appl. Phys. 79 607
[13] Drodofsky U, Stuhler J, Brezger B 1997 Micr. Engi. 35 285
[14] Ma Y, Zhang B W, Zheng C L, Ma S S, Li F S, Wang Z S, Li T B 2006 Atca Phys. Sin. 55 4086 (in Chinese) [马 艳、张宝武、郑春兰、马姗姗、李佛生、王占山、李同保 2006 55 4086\]
[15] Ma Y, Zhang B W, Zheng C L, Ma S S, Li F S, Wang Z S, Li T B 2007 Acta Photonica Sinica 36 201
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