集成电路微互连结构中的热迁移

张金松; 吴懿平; 王永国; 陶媛

doi:10.7498/aps.59.4395

摘要

高工作电流在集成电路微互连结构中产生大量焦耳热，引起局部区域的温升、形成高温度梯度，金属原子沿着温度梯度反向运动发生热迁移.热迁移是集成电路微互连失效的主要原因之一.阐述了热迁移原理、失效模式及原子迁移方程.综述和分析了在单纯温度场、电场和温度场耦合等不同载荷条件下金属引线和合金焊料的热迁移研究.归纳并提出了集成电路微互连结构热迁移研究亟待解决的问题.

关键词:

集成电路 /
微互连 /
热迁移

With the reduction of feature size of integrated circuits, higher current density has been introduced in electronic devices which produces a significant Joule heating effect. This also brings about an increase of the temperature which induces a very high temperature gradient in some local regions of micro interconnects. As a result, thermomigration will occur and metal atoms will move opposite to the direction of the temperature gradient. Thermomigration is one of common modes in reliability failures in electronic devices. This paper reviews and analyzes the previous researches on the thermomigration theory and experiment in stripe and solder interconnects under the temperature loading and the current/temperature loading. The challenges of thermomigration are discussed for interconnects in electronic devices in the future.

Keywords:

作者及机构信息

(1)华中科技大学材料科学与工程学院，武汉 430074; (2)上海大学机电工程与自动化学院，上海 200072

基金项目: 国家自然科学基金（批准号：60876070）和上海大学创新基金(批准号：A10-0109-08-004)资助的课题.

Authors and contacts

(1)华中科技大学材料科学与工程学院，武汉 430074; (2)上海大学机电工程与自动化学院，上海 200072

参考文献

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[38]	］Zhang J S, Chan Y C, Wu Y P, Xi H J, Wu F S, Wu B Y 2008 J. Alloys Compd. 458 492
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施引文献

[1]	［1］Pecht M, Chan Y C 2004 China’s Electronics Industry (College Park: Calce Epsc Press) p18
[2]	［2］Tu K N, Gusak A M, Li M 2003 J. Appl. Phys. 93 1335
[3]	［3］Lee T Y, Tu K N 2001 J. Appl. Phys. 89 3189
[4]	［4］Wu Y P, Zhang J S, Wu F S, An B 2006 J. Semicond. 27 1136 (in Chinese) ［吴懿平、张金松、吴丰顺、安兵 2006 半导体学报 27 1136］
[5]	［5］Van Gurp G J, De Waard P J, Du Chatenier F J 1984 Appl. Phys. Lett. 45 1054
[6]	［6］Ye H, Basaran C, Hopkins D C, Frear D, Lin J K 2004 54th Electronic Components and Technology Conference (Las Vegas: IEEE) p988
[7]	［7］Huang A T, Gusak A M, Tu K N, Lai Y S 2006 Appl. Phys. Lett. 88 141911
[8]	［8］Chuang Y C, Liu C Y 2006 Appl. Phys. Lett. 88 174105
[9]	［9］Johns R A, Blackburn D A 1975 Thin Solid Films 25 291
[10]	］Morozumi S, Goto S, Yoshida T 1976 Scripta Mater. 10 537
[11]	］Fee D C, Johnson C E 1981 J. Nucl. Mater. 96 71
[12]	］McKee R A, Stark J P 1975 Acta Mater. 23 1145
[13]	］Van Gurp G J, De Waard P J, Du Chatenier F J 1985 J. Appl. Phys. 58 728
[14]	］Morillon B, Dilhac J M, Auriel G, Ganibal C, Anceau C 2002 32nd European Solid-State Device Research Conference(Firenze: IEEE) p327
[15]	］De Munari I, Speroni F, Reverberi M, Neva C, Lonzi L, Fantini F 1996 Microelectron. Reliab. 36 1875
[16]	］Van Gurp G J 1976 Thin Solid Films 38 295
[17]	］Oldham D J, Bleay J A, Blackburn D A 1977 Acta Mater. 25 1345
[18]	］Nguyen H V, Salm C, Krabbenbrg B, Weide-Zaage K, Bisschopb J, Mouthma A J, Kuper F G 2004 42nd Annual International Reliability Physics Symposium (Phoenix: IEEE) p619
[19]	］Ru C Q 1999 Acta Mater. 47 3571
[20]	］Ru C Q 2000 J. Mater. Sci. 35 5575
[21]	］Tan C M, Zhang G, Gan Z H 2004 IEEE Trans. Device Mater. Reliab. 4 450
[22]	］Basaran C, Ye H, Hopkins D C, Frear D, Lin J K 2005 Adv. Packaging 10 14
[23]	］Basaran C, Ye H, Hopkins D C, Frear D, Lin J K 2005 J. Electron. Packaging 127 157
[24]	］Ye H, Basaran C, Hopkins D C 2003 Appl. Phys. Lett. 82 1045
[25]	］Ye H, Basaran C, Hopkins D C 2003 Int. J. Solids Struct. 40 7269
[26]	］Roush W, Jaspal J 1982 32nd Electronic Components Conference (San Diego: IEEE) p342
[27]	］Hsiao H Y, Chen C 2007 Appl. Phys. Lett. 90 152105
[28]	］Ouyang F Y, Tu K N, Lai Y S, Gusak M A 2006 Appl. Phys. Lett. 89 221906
[29]	］Rinne G A 2003 28th Electronic Manufacturing Technology Symposium (San Jose: IEEE) p177
[30]	］Yang D, Wu B Y, Chan Y C, Tu K N 2007 J. Appl. Phys. 102 043502
[31]	］Chen H Y, Chen C, Tu K N 2008 Appl. Phys. Lett. 93 122103
[32]	］Hsiao H Y, Chen C 2009 Appl. Phys. Lett. 94 092107
[33]	］Basaran C, Li S D, Abdulhamid M F 2008 J. Appl. Phys. 103 123520
[34]	］Abdulhamid M F, Basaran C 2009 J. Electron. Packaging 131 011002
[35]	］Gu X, Chan Y C 2009 J. Appl. Phys. 105 093537
[36]	］Rinne G A 2003 Microelectron. Reliab. 43 1975
[37]	］Zhang J S 2008 Ph. D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) ［张金松 2008 博士学位论文 (武汉：华中科技大学)］
[38]	］Zhang J S, Chan Y C, Wu Y P, Xi H J, Wu F S, Wu B Y 2008 J. Alloys Compd. 458 492
[39]	］Zhang J S, Xi H J, Wu Y P, Wu F S 2008 J. Semicond. 29 174 (in Chinese) ［张金松、奚弘甲、吴懿平、吴丰顺 2008 半导体学报 29 174］
[40]	］Zhang J S, Xi H J, Wu Y P, Wu F S 2009 J. Electron. Mater. 38 678

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