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The difference between the diffusion drift length of photoelectrons in exponential-doping GaAs photocathode and that in uniform-doping GaAs photocathode is studied. According to quantum equations, the optimized thickness of transmission-mode exponential-doping GaAs photocathode is simulated to be 20 μm. Two transmission-mode exponential-doping GaAs samples with the thickness of 16 and 20 μm are activated by (Cs,O) alternation technique. Integral sensitivities of the two samples are 1228 and 1547 μA/lm, respectively. The ratio of integral sensitivities of the two samples is 0796∶1, which agrees with the simulation result.
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Keywords:
- GaAs photocathode /
- transmission-mode /
- exponential-doping /
- thickness
[1] ［1］Reilly D J, Taylor M J, Petta R J, Marcus C M, Hanson M P, Gossard A C 2008 Science 321 1350
[2] ［2］Liu Z, Sun Y, Peterson S, Pianetta P 2008 Appl. Phys. Lett. 92 241107
[3] ［3］Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[4] ［4］Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 6109 (in Chinese) ［邹继军、常本康、杨智 2007 56 610］
[5] ［5］Ding H B, Pang W N , Liu Y B , Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) ［丁海兵、庞文宁、刘义保、尚仁成 2005 54 4097］
[6] ［6］Spindt C J, Besser R S, Cao R 1989 Appl. Phys. Lett. 54 1148
[7] ［7］Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) ［邹继军、常本康、杨智 2007 56 2992］
[8] ［8］Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese) ［牛军、杨智、常本康、乔建良、张益军 2009 58 5002］
[9] ［9］Schneider J E， Sen P, Pickard D S J 1998 J.Vac. Sci. Techn. 16 3192
[10] ］Guo L J, Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese) ［郭立俊、Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 54 3200］
[11] ］Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Techn. B 21 1863
[12] ］Fisher D G, Enstrom R E, Escher J S 1972 J. Appl. Phys. 43 3815
[13] ］Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413
[14] ］Spicer W E, Herrera-Gomez A 1993 Proc. SPIE 2022 18
[15] ］James L W, Moll J L 1969 Phys. Rev. 183 740
[16] ］Zou J J, Chang B K, Chen H L, Liu L 2007 J. Appl. Phys. 101 033126
[17] ］Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p114 (in Chinese) ［刘恩科、朱秉升、罗晋生 2003 半导体物理学(北京:电子工业出版社) 第114页］
[18] ］Turnbull A A, Evans G B 1968 J. Appl. Phys. 1 155
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[1] ［1］Reilly D J, Taylor M J, Petta R J, Marcus C M, Hanson M P, Gossard A C 2008 Science 321 1350
[2] ［2］Liu Z, Sun Y, Peterson S, Pianetta P 2008 Appl. Phys. Lett. 92 241107
[3] ［3］Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[4] ［4］Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 6109 (in Chinese) ［邹继军、常本康、杨智 2007 56 610］
[5] ［5］Ding H B, Pang W N , Liu Y B , Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) ［丁海兵、庞文宁、刘义保、尚仁成 2005 54 4097］
[6] ［6］Spindt C J, Besser R S, Cao R 1989 Appl. Phys. Lett. 54 1148
[7] ［7］Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) ［邹继军、常本康、杨智 2007 56 2992］
[8] ［8］Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese) ［牛军、杨智、常本康、乔建良、张益军 2009 58 5002］
[9] ［9］Schneider J E， Sen P, Pickard D S J 1998 J.Vac. Sci. Techn. 16 3192
[10] ］Guo L J, Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese) ［郭立俊、Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 54 3200］
[11] ］Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Techn. B 21 1863
[12] ］Fisher D G, Enstrom R E, Escher J S 1972 J. Appl. Phys. 43 3815
[13] ］Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413
[14] ］Spicer W E, Herrera-Gomez A 1993 Proc. SPIE 2022 18
[15] ］James L W, Moll J L 1969 Phys. Rev. 183 740
[16] ］Zou J J, Chang B K, Chen H L, Liu L 2007 J. Appl. Phys. 101 033126
[17] ］Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p114 (in Chinese) ［刘恩科、朱秉升、罗晋生 2003 半导体物理学(北京:电子工业出版社) 第114页］
[18] ］Turnbull A A, Evans G B 1968 J. Appl. Phys. 1 155
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