N-type phosphors doping layer as the window layer of microcrystalline silicon solar cells has been fabricated using conversional radio frequency plasma enhanced chemical vapor deposition. Because of hole and electron mobilities are of the same order for microcrystalline silicon thin film, microcrystalline silicon solar cells based on n-type doping layer as the window layer almost show the same efficiency as microcrystalline silicon solar cells based on p-type doping layer as the window layer. In addition, the results of quantum efficiency are also consistent with the I-V measurement results. Bilateral Raman measurement results using laser light of different wavelength indicated that p/i or n/i interface incubation layer has a disadvantageous influence on the current density of the solar cells. Through the optimization of n/i interface incubation layer, glass/ZnO/n/i/p/Al microcrystalline silicon solar cell with 7.7% conversion efficiency has been fabricated.