Uniform triangular dots (TDs) and ridge dots (RDs) structures are grown by moleculat beam epitaxy (MBE) on square mesa and hole patterned (311)A substrates. The surface morphology and cross-sectional characterization of the dot structures investigated by atomic force microscopy(AFM) and scanning electron microscopy(SEM) show that the TDs and RDs structures are formed on the hole and mesa patterned areas during the growth. TDs are one-side pinch-off structure evaluated between the holes with highly uniform tips along ［233］ direction, and the RDs two-side pinch-off structure accomplished on the mesa with ordered two opposite tips, respectively. The AFM line-scan height profiles of the dots structures indicate that the TDs and RDs structures are dominated by the Ga adatoms preferential migration from symmetric (331)A side walls of the mesa and holes to the bottom region to develop the triangular shaped tips structure, while the facet orientation of the tips is determined by the original side walls orientation of the mesa and hole to lead to form uniform pinch-off arrays. The cathode luminescense measurements reveal that the line,dot,ring-like lateral variations of quantum well confinement energies are formed in the regions of the TDs and RDs structures. These unique growth phenomenon provides a good possibility to realize three-dimensional quantum confinement structures by using MBE growth on (311)A substrates with much smaller length scale of patterning.