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在空间核反应堆系统、深空探测器电源模块以及运载火箭推进装置等极端辐射环境中，高压大功率器件展现出重要的应用价值。碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）具备耐高压、耐高温和低导通损耗等优点，能够使宇航电源的效率得到进一步提升。因此，SiC功率MOSFET空间辐射效应和抗辐射加固技术迅速成为行业的研究热点。首先，本文回顾了SiC功率MOSFET器件的发展历程，分析了从平面栅技术到沟槽栅技术的演变过程，并对未来新型SiC功率MOSFET技术进行了展望。其次，针对SiC功率MOSFET在复杂空间环境下面临的辐射损伤问题，着重梳理了目前国内外关于重离子辐照SiC功率MOSFET引起的单粒子烧毁与单粒子栅穿的相关研究成果[一邱1]。最后，基于SiC功率MOSFET单粒子辐射损伤机制分析，总结了目前SiC功率MOSFET抗辐射加固技术的研究进展，为研究SiC功率MOSFET单粒子效应损伤机制以及改进其抗辐射加固技术提供参考。
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关键词:
- SiC功率MOSFET /
- 单粒子烧毁 /
- 单粒子栅穿 /
- 辐射损伤机制 /
- 抗辐射加固
In extreme radiation environments, such as space nuclear reactor systems, deep-space probe power modules, and launch vehicle propulsion systems, high-voltage and high-power devices demonstrate significant practical value. Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) possess advantages including high breakdown voltage, thermal stability, and low on-state resistance, enabling further improvements in aerospace power supply efficiency. Therefore, research on radiation effects and radiation-hardening techniques for SiC power MOSFETs has rapidly emerged as a critical focus in the industry. Firstly, this paper reviews the developmental evolution of SiC power MOSFETs, analyzes the necessity of transitioning from planar gate to trench-gate architectures, and provides future perspectives on advanced SiC power MOSFET technologies. Secondly, it systematically compiles current domestic and international research achievements on single event burnout (SEB) and single event gate rupture (SEGR) caused by heavy ion irradiation in SiC power MOSFETs. Finally, based on a mechanistic analysis of radiation-induced single event damage in SiC power MOSFETs, this study summarizes recent progress in radiation-hardening technologies, aiming to provide valuable insights for understanding radiation induced failure mechanisms and enhancing the radiation tolerance of SiC power MOSFETs.-
Keywords:
- SiC power MOSFET /
- single event burnout /
- single event gate rupture /
- radiation damage mechanism /
- radiation hardening
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