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利用飞秒脉冲激光对氮化镓(GaN)功率器件进行单粒子烧毁效应定量评估技术研究, 针对器件结构建立脉冲激光有效能量传输模型, 理论计算了激光有效能量与重离子线性能量传输(LET)的等效关系并开展了试验验证. 考虑器件材料反射率与吸收系数对激光的影响, 针对介质层界面间的激光多次反射进行参数修正, 减小有源区有效能量计算误差. 选择一款氮化镓高电子迁移率晶体管(GaN HEMT)与一款肖特基势垒二极管(SBD)功率器件作为典型案例, 分别开展飞秒脉冲激光正面与背部辐照试验, 计算诱发单粒子烧毁的有效能量, 并得到不同入射激光波长的烧毁等效LET阈值, 对比了模型理论计算值与实际测量值. 同时, 研究结果对材料参数未知的GaN功率器件, 提供了正面与背部辐照模型的激光试验波长选择参考. 该工作将为激光定量评估空间用GaN等宽禁带半导体器件的单粒子烧毁效应机理研究及加固设计与验证提供技术支撑.The femtosecond pulsed laser is used to study the quantitative evaluation technology of the single event burnout (SEB) effect in GaN power devices. In this work, we establish two pulsed-laser effective energy transmission models for different device structures, analyzing and verifying the equivalent relationship between the effective laser energy and the heavy ion linear energy transmission (LET). The critical parameters of models are confirmed, including laser parameters and device parameters. The interface reflectivity between the layers is mainly considered. Meanwhile, the parameters are corrected by the multiple reflections between the interfaces, and the laser energy of the second reflection of the metal layer is considered. These measures can be used to reduce the error of the effective energy in the device active area. In addition, we validate the models experimentally. A gallium nitride high electron mobility transistor (GaN HEMT) and a schottky barrier diode (SBD) power device are used in the experiment on the irradiation by a femtosecond pulse laser. The effective laser energy thresholds and the laser equivalent LET threshold with two incident wavelengths of the SEB are calculated. The theoretical calculation value and the actual measured value are compared. The selcction basis of the laser wavelengths is given by the detailed study. The support for the laser quantitative evaluation and the protection design of the SEB in GaN power devices is provided by this work.
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Keywords:
- GaN power devices /
- femtosecond pulsed laser /
- Single Event Burnout /
- equivalent LET
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图 1 正面入射的脉冲激光能量传输模型
Fig. 1. Pulsed-laser energy transmission model with frontal incidence.
图 2 背部入射的脉冲激光能量传输模型 (a) 背部开孔的HEMT器件; (b) SBD器件
Fig. 2. Pulsed-laser energy transmission model with back incidence: (a) HEMT device with hole on the back; (b) SBD device.
图 3 不同波长下激光在GaN材料中的穿透深度
Fig. 3. Laser penetration depth in GaN materials at different wavelengths.
图 4 脉冲激光在介质层间多次反射示意图
Fig. 4. Schematic diagram of the pulsed laser light reflecting between dielectric layers.
图 5 不同波长下GaN材料的
$ \beta $ 值Fig. 5.
$ \beta $ of GaN materials at different wavelengths.
图 6 飞秒脉冲激光单粒子效应试验装置 (a) 原理图; (b) 实物图
Fig. 6. Femtosecond pulsed laser SEE test device: (a) Schematic diagram; (b) physical diagram.
图 7 验证器件结构参数及激光入射位置 (a) 器件1; (b) 器件2
Fig. 7. Device structure parameters and laser incident positions: (a) Device 1; (b) device 2.
图 8 器件发生SEB后的实物图 (a) 器件1; (b) 器件2
Fig. 8. The physical pictures of the devices after SEB: (a) Device 1; (b) device 2.
图 9 不同波长下器件发生SEB的
$ {E}_{\mathrm{e}\mathrm{f}\mathrm{f}}^{2} $ 与LET关系对比图 (a) 620 nm; (b) 720 nmFig. 9. Corresponding diagram of the relationship between
$ {E}_{\mathrm{e}\mathrm{f}\mathrm{f}}^{2} $ and LET under different wavelengths causing SEB: (a) 620 nm; (b) 720 nm.表 1 不同波长的激光在不同厚度的Al0.2Ga0.8N中的吸收系数与光损
Table 1. Absorption coefficients and optical losses of different laser wavelengths in different thicknesses of Al0.2Ga0.8N.
波长/nm 600 620 650 700 720 吸收系数/cm–1 210 190 172 155 143 30 nm厚光损 0.06% 0.06% 0.05% 0.05% 0.04% 50 nm厚光损 0.1% 0.1% 0.09% 0.08% 0.07% 70 nm厚光损 0.14% 0.13% 0.12% 0.11% 0.1% 
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表 2 不同波长的激光在材料中的空气中反射率与折射率
Table 2. The reflectivity and refractive index of different laser wavelengths from air to the material.
光学参数 材料 波长/nm 600 620 650 700 720 空气中
反射率Si3N4 0.118 0.117 0.117 0.116 0.116 Al0.2Ga0.8N 0.14 0.14 0.14 0.14 0.14 GaN 0.169 0.168 0.167 0.165 0.165 蓝宝石 0.08 0.08 0.08 0.08 0.08 折射率 Si3N4 2.04 2.04 2.04 2.03 2.03 Al0.2Ga0.8N 2.18 2.18 2.18 2.17 2.17 GaN 2.31 2.31 2.31 2.31 2.31 蓝宝石 1.76 1.76 1.76 1.76 1.75
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表 3 激光试验结果
Table 3. Laser test results.
器件 器件工作
电压/V波长/nm 诱发SEB的
激光能量/nJ器件1 520 620 3.3 720 6 器件2 90 620 3.8 720 4.5
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表 4 器件有效能量
$ {E}_{\mathrm{e}\mathrm{f}\mathrm{f}} $ Table 4. Device effective energy
$ {E}_{\mathrm{e}\mathrm{f}\mathrm{f}} $ .器件 入射激光
波长/nm入射激光
能量/nJ有效能
量$ {E}_{\mathrm{e}\mathrm{f}\mathrm{f}} $/nJ器件1 620 3.3 2.91 720 6 5.29 器件2 620 3.8 3.56 720 4.5 6.44
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表 5 器件重离子SEB结果
Table 5. SEB results (Heavy ion) of the device.
器件 毁坏时最低
工作电压/VLET (GaN)/
(MeV·cm2·mg–1)器件1 520 18 器件2 90 28.5
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表 6 激光ELET与重离子LET对比
Table 6. Comparison of laser ELET and Heavy ion LET.
器件 毁坏时工作
电压/V入射激光
波长/nm有效能量
$ {E}_{\mathrm{e}\mathrm{f}\mathrm{f}} $/nJ激光ELET/
(MeV·cm2·mg–1)重离子LET (GaN)/
MeV·cm2/·mg–1)器件1 520 620 2.91 18.97 18 720 5.29 18.47 器件2 90 620 3.56 28.39 28.5 720 6.44 27.37
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[1] Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura I, Ogura T, Ohashi H 2003 IEEE Trans. Electron Devices. 50 2528
Google Scholar
[2] Meneghesso G, Verzellesi G, Danesin F, Rampazzo F, Zanon F, Tazzoli A, Meneghini A, Zanoni E 2008 IEEE Trans. Device Mater. Reliab. 8 332
Google Scholar
[3] Millán J, Godignon P, Perpiñà X, Tomás A P, Rebollo J 2014 IEEE Trans. Power Electron. 29 2155
Google Scholar
[4] Zerarka M, Crepel O 2018 Microelectron. Reliab. 88 984
Google Scholar
[5] Shikhar S, Ashish S, Subhashish B 2015 IEEE Applied Power Electronics Conference and Exposition Charlotte, NC, USA, March 15–19, 2015 p1048
[6] 陈睿, 梁亚楠, 韩建伟, 王璇, 杨涵, 陈钱, 袁润杰, 马英起, 上官士鹏 2021 11 116102
Google Scholar
Chen R, Liang Y N, Han J W, Wang X, Yang H, Chen Q, Yuan R J, Ma Y Q, Shangguan S P 2021 Acta Phys. Sin. 11 116102
Google Scholar
[7] Zhang F, Wang Y, Wu X, Cao F 2020 IEEE Access 8 12445
Google Scholar
[8] Scheick L 2014 IEEE Trans. Nucl. Sci. 61 2881
Google Scholar
[9] Cai S J, Tang Y S, Wei Y Y, Wong L, Chen Y L, Wang K L, Chen M, Schrimpf R D, Keay J C, Galloway K F 2000 IEEE Trans. Electron Devices. 47 304
Google Scholar
[10] Luo B, Johnson J W, Ren F 2001 Appl. Phys. Let. 79 2196
Google Scholar
[11] Kim H Y, Kim J, Liu L, Lo C F, Ren F, Pearton S J 2012 J. Vac. Sci. Technol. 30 012202
Google Scholar
[12] Zerarka M, Austin P, Toulon G, Morancho F, Arbess H, Tasselli J 2012 IEEE Trans. Electron Devices. 59 3482
Google Scholar
[13] Martinez M J, King M P, Baca A G, Allerman A A, Armstrong A A, Klein B A, Douglas E A, Kaplar R J, Swanson S E 2019 IEEE Trans. Nucl. Sci. 66 344
Google Scholar
[14] Luo X, Wang Y, Hao Y, Li X J, Liu C M, Fei X X, Yu C H, Cao F 2019 IEEE Trans. Electron Devices. 66 1118
Google Scholar
[15] Buchner S, Howard J, Poivey C, McMorrow D, Pease R 2004 IEEE Trans. Nucl. Sci. 51 3716
Google Scholar
[16] 韩建伟, 上官士鹏, 马英起, 朱翔, 陈睿, 李赛 2017 深空探测学报 4 577
Google Scholar
Han J W, Shangguan S P, Ma Y Q, Zhu X, Chen R, Li S 2017 J. Deep Space Explor. 4 577
Google Scholar
[17] Buchner S, Miller F, Pouget V, McMorrow D 2013 IEEE Trans. Nucl. Sci. 60 1852
Google Scholar
[18] Ngom C, Pouget V, Zerarka M, Coccetti F, Crepel O, Touboul A, Matmat M 2021 Microelectron. Reliab. 126 114339
[19] Khachatrian A, Roche N J, Buchner S, Koehler A D, Greenlee J D, Anderson T J, Warner J H, McMorrow D 2016 IEEE Trans. Nucl. Sci. 63 1995
Google Scholar
[20] Roche N J, Khachatrian A, King M, Buchner S, Halles J, Kaplar R, Armstrong A, Kizilyalli I C, Cunningham P D, Melinger J S, Warner J H, McMorrow D 2016 16 th European Conference on Radiation and Its Effects on Components and Systems(RADECS) Bremen, Germany, September 19–23, 2016
[21] Khachatrian A, Roche N J, Buchner S, Koehler A D, Anderson T J, Cavrois V F, Muschitiello M, McMorrow D, Weaver B, Hobart K D 2015 IEEE Trans. Nucl. Sci. 62 2743
Google Scholar
[22] 上官士鹏 2020 博士学位论文 (北京: 中国科学院大学)
Shangguan S P 2020 Ph. D. Dissertation (Beijing: University of Chinese Academy of Sciences) (in Chinese)
[23] Refractive index database, Polyanskiy M N https://refractiveindex.info/ [2021-12-5]
[24] Mizuta E, Kuboyama S, Nakada Y, Takeyama A, Ohshima T, Iwata Y, Suzuki K 2018 IEEE Trans. Nucl. Sci. 65 1956
Google Scholar
[25] Sun C K, Liang J C, Wang J C, Kao F J 2000 Appl. Phys. Let. 76 439
Google Scholar
[26] Chen H, Huang X, Fu H, Lu Z, Zhang X, Montes J A, Zhao Y 2017 Appl. Phys. Lett. 110 181110
Google Scholar
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