成像板发光原理及其特性

王浩然; 田宝贤; 薄楠; 刘伏龙; 贺创业; 贾少青; 郭冰; 王乃彦

doi:10.7498/aps.72.20230587

摘要

由于成像板(imaging plate, IP)对电磁辐射场不敏感, 因而作为探测介质被广泛应用于激光驱动的辐射粒子诊断设备中, 在使用前需要对其特性和物理机制进行研究. 利用⁹⁰Sr/⁹⁰Y电子源测量BAS-SR和BAS-TR两种IP板的时间衰减曲线, 同时对长时间辐照的衰减曲线进行修正; 刻度了 BAS-SR和BAS-TR两种IP板对⁹⁰Sr/⁹⁰Y电子源的绝对灵敏度, 其分别为(0.033±0.002) PSL/e和(0.0180±0.0038) PSL/e (photostimulated light, PSL), 与国际上大部分电子绝对刻度的结果基本相符, IP板对辐射粒子的绝对刻度依赖于IP板的类型、扫描设备和实验环境. 此外对BAS-SR和BAS-TR两种IP板辐照后进行多次连续扫描, 研究了信号强度变化趋势的规律. 建立了用于描述辐射粒子在IP板荧光层中沉积能量、存储信息和信息读取微观物理过程的光激励发光模型, 结合光激励发光模型建立的数学模型有效地阐释了IP板探测辐射粒子物理机制与其表现的特性之间的关系. 这些研究可以为后续开展IP板应用于激光等离子体诊断实验提供一定的数据基础.

关键词:

Abstract

The imaging plate (IP) is a reusable detector for detecting radiation particles in a complex electromagnetic field environment, and it is widely used as a detection medium in laser-accelerated particle beam diagnostic equipment. Therefore, it is necessary to study the performance characteristics and physical mechanism of IP. An electron source with known activity is used to explore the performance characteristics of IP. A ⁹⁰Sr/⁹⁰Y electron source is used to measure the time attenuation curve, calibrate the absolute sensitivity, and study the law of multiple scanning of BAS-SR and BAS-TR. In the case of a longer irradiation, the fading cannot be neglected, and the attenuation curves are modified. The time attenuation characteristics indicate that the IP should be cooled after irradiation, and the scanning should be carried out in the slow decay process to reduce the influence of the reading error in the decay process. The absolute sensitivity of BAS-SR and BAS-TR to ⁹⁰Sr/⁹⁰Y source are (0.033±0.002) PSL/e and (0.018±0.0038) PSL/e (photostimulated light, PSL), respectively, which are consistent with the results of most absolute sensitivity. The absolute sensitivity is closely related to the type of IP, scanning equipment, and experimental environment. In addition, the energy spectrum integral effect of the broad spectrum β source has a significant influence on the absolute sensitivity. This method is only suitable for the rough evaluation of the sensitivity characteristic parameters of the IP. Multiple scanning approximately satisfies the double exponential function distribution, which is consistent with the physical model. The characteristics of IP are determined by its storage principle. The fluorescence layer of IP is composed of typical electron trapping materials MFX (M = Ca, Sr, Ba; X = C1, Br, I) alkaline earth metal fluorhalide BaFBr. When the IP is irradiated, a large number of free electron-hole pairs are excited by the deposited energy in the material, and the free electrons will be captured by the electron trap, so the fluorescence layer of the IP records the radiation particles’ information through the energy deposited. In this paper, we study three kinds of models. Based on the models, a photo-stimulated luminescence model is proposed to describe the electron transfer process. The photo-stimulated luminescence model describes the physical mechanism of energy deposition, information storage, and information scanning of radiation particles. The relationship between the physical mechanism and characteristics is explained effectively by combining the microscopic mathematical model with the macroscopic physical phenomenon. It provides a specific data basis for the subsequent application of IPs in laser plasma diagnostic experiments.

Keywords:

作者及机构信息

1.
北京师范大学核科学与技术学院, 北京　100875

2.
北京师范大学, 射线束技术教育部重点实验室, 北京　100875

3.
中国原子能科学研究院, 北京　102413

4.
原子高科股份有限公司, 北京　102413

通信作者: 王乃彦, wangny@bnu.edu.cn

基金项目: 国家自然科学基金(批准号: 11935008)资助的课题.

Authors and contacts

1.
College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China

2.
Key Laboratory of Beam Technology of Ministry of Education, Beijing Normal University, Beijing 100875, China

3.
China Institute of Atomic Energy, Beijing 102413, China

4.
Atomic High Technol Company, Ltd, Beijing 102413, China

Corresponding author: Wang Nai-Yan, wangny@bnu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11935008).

文章全文 : translate this paragraph

参考文献

[1]	Danson C N, Haefner C, Bromage J 2019 High Power Laser Sci. 7 54 Google Scholar
[2]	Esarey E, Schroeder C B, Leemans W P 2009 Rev. Mod. Phys. 81 1229 Google Scholar
[3]	黄建微, 李德红, 党永乐, 吴笛, 王乃彦, 郝艳梅 2017 核电子学与探测技术 37 559 Google Scholar Huang J W, Li D H, Dang Y L, Wu D, Wang N Y, Hao Y M 2017 Nucl. Electron. Detect. Technol. 37 559 Google Scholar
[4]	Zeil K, Kraft S D, Jochmann A, Kroll F, Jahr W, Schramm U, Karsch L, Pawelke J, Hidding B, Pretzler G 2010 Rev. Sci. Instrum. 81 013307 Google Scholar
[5]	Gales S G, Bentley C D 2004 Rev. Sci. Instrum. 75 4001 Google Scholar
[6]	Busold1 S, Philipp K, Otten A, Roth M 2014 Rev. Sci. Instrum. 85 113306 Google Scholar
[7]	孙力, 王永生, 董金凤, 何志毅, 徐征 2001 激光与红外 31 269 Google Scholar Sun L, Wang Y S, Dong J F, He Z Y, Xu Z 2001 Laser Infrared 31 269 Google Scholar
[8]	Bonnet T, Comet M, Denis-Petit D, Gobet F, Hannachi F, Tarisien M, Versteegen M, Aléonard M M 2013 Rev. Sci. Instrum. 84 103510 Google Scholar
[9]	Bonnet T, Comet M, Denis-Petit D, Gobet F, Hannachi F, Tarisien M, Versteegen M, Aleonard M M 2013 Rev. Sci. Instrum. 84 103508 Google Scholar
[10]	Williams G, Jackson M, Brian R, Chen H, Kojima S 2014 Rev. Sci. Instrum. 85 11E604 Google Scholar
[11]	Ohuchi H, Yamadera A, Nakamura T 2000 Nucl. Instrum. Meth. A 450 343 Google Scholar
[12]	Tanaka K A, Yabuuchi T, Sato T, Kodama R, Kitagawa Y, Takahashi T, Ikeda T, Honda Y, Okuda S 2005 Rev. Sci. Instrum. 76 013507 Google Scholar
[13]	Chen H, Back N L, Bartal T, Beg F N, Eder D C, Link A J, MacPhee A G, Ping Y, Song P M, Throop A, Van Woerkom L 2008 Rev. Sci. Instrum. 79 033301 Google Scholar
[14]	Rabhi N, Bohacek K, Batani D, Boutoux G, Ducret J E, Guillaume E, Jakubowska K, Thaury C, Thfoin I 2016 Rev. Sci. Instrum. 87 053306 Google Scholar
[15]	Singh S, Slavicek T, Hodak R, Versaci R, Pridal P, Kumar D 2017 Rev. Sci. Instrum. 88 075105 Google Scholar
[16]	Takahashi K, Kohda K, Miyahara J 1984 J. Lumi. 31 266
[17]	Von Seggern H, Voigt T, Knüpfer W, Lange G 1988 J. Appl. Phys. 64 1405 Google Scholar
[18]	Von Seggern H 1999 Brazilian J. Phys. 29 254 Google Scholar
[19]	赵辉, 王永生, 徐征, 侯延冰, 徐叙 1998 47 333 Google Scholar Zhao H, Wang Y S, Xu Z, Hou Y B, Xu X 1998 Acta Phys. Sin. 47 333 Google Scholar
[20]	Golovin D O, Mirfayzi S R, Shokita S, Abe Y, Lanl Z, Arikawa Y, Morace A, Pikuz T A, Yogo A 2021 J. Instrum. 16 T02005 Google Scholar
[21]	Qi J M, Zhang F Q, Chen J C, Xie H W 2014 Chin. Phys. C 38 016001 Google Scholar

施引文献

图 1 利用⁹⁰Sr/⁹⁰Y 放射源标定IP板特性参数实验

Fig. 1. Calibration experiments for IPs based on a ⁹⁰Sr/⁹⁰Y radioactive source.

下载: 全尺寸图片幻灯片

图 2 BAS-SR和BAS-TR时间衰减曲线

Fig. 2. Fading time effect curves of BAS-SR and BAS-TR.

下载: 全尺寸图片幻灯片

图 3 BAS-SR和 BAS-TR型IP板的PSL与电子数的关系

Fig. 3. Relationship between PSL and number of electron for BAS-SR and BAS-TR.

下载: 全尺寸图片幻灯片

图 4 BAS-SR型IP多次扫描下信号强度的变化

Fig. 4. Signal intensity decreases with the scanning number for BAS-SR.

下载: 全尺寸图片幻灯片

图 5 BAS-TR型IP板多次扫描下信号强度变化

Fig. 5. Signal intensity decreases with the scanning number for BAS-TR.

下载: 全尺寸图片幻灯片

图 6 IP记录辐射粒子的物理机制

Fig. 6. Physical mechanism of the IP records radiation particles.

下载: 全尺寸图片幻灯片

图 7 BAS-SR 型IP板多次扫描规律曲线

Fig. 7. Multiple scanning regular curve of BAS-SR.

下载: 全尺寸图片幻灯片

图 8 BAS-TR型IP板多次扫描规律曲线

Fig. 8. Multiple scanning regular curve of BAS-MS.

下载: 全尺寸图片幻灯片

表 1 IP板衰退效应时间函数的参数以及文献中对应参数^[4,9,20,21]

Table 1. Parameters of fading time effect for IPs and corresponding parameters ^[4,9,20,21].

IP	$ {A}_{1} $	$ {B}_{1} $/min	$ {A}_{2} $	$ {B}_{2} $/min
BAS-SR	0.55	9.3	0.45	3792.2
BAS-TR	0.47	11.7	0.53	3937.2
BAS-SR^[4]	0.27	36.0	0.33	1338
BAS-MS^[4]	0.18	36.0	0.17	288
BAS-MS^[9]	0.26	37.6	0.74	2604
BAS-TR^[9]	0.49	17.9	0.51	1482
BAS-SR^[9]	0.49	11.9	0.51	1390
BAS-MS^[21]	0.12	49.0	0.27	335
BAS-TR^[21]	0.31	48.0	0.25	295
BAS-TR^[20]	0.36	33.0	0.64	2041

下载: 导出CSV

表 2 衰退时间效应对IP板读数信号强度的影响

Table 2. Signal intensity decreases with fading time.

冷却时间	BAS-SR		BAS-TR
冷却时间	衰减剩余/%	衰减速率/%	衰减剩余/%	衰减速率/%
B₁	65.12	2.19	62.16	1.49
2B₁	52.22	0.81	51.09	0.56
3B₁	47.41	0.31	46.94	0.21
4B₁	45.57	0.12	45.33	0.09
5B₁	44.82	0.05	44.65	0.05

下载: 导出CSV

表 3 IP板对电子的灵敏度^[8,12,13,15]

Table 3. Sensitivity of IP to different energy of electrons^[8,12,13,15].

实验室/ IP板类型	E_e = 196 keV 灵敏度(PSL/e)	E_e = 934 keV 灵敏度(PSL/e)
CENBGR/ BAS-SR^[8]	0.037	0.015
CENBGR/ BAS-TR^[8]	0.025	0.007
LLNL/ BAS-SR^[13]	0.037	0.009
ILE/BAS-SR^[12]	0.030	0.010
ELI/BAS-SR^[15]	0.0299	0.012
BAS-SR	0.030	0.033
BAS-TR	0.024	0.018

下载: 导出CSV

map

[1]	Danson C N, Haefner C, Bromage J 2019 High Power Laser Sci. 7 54 Google Scholar
[2]	Esarey E, Schroeder C B, Leemans W P 2009 Rev. Mod. Phys. 81 1229 Google Scholar
[3]	黄建微, 李德红, 党永乐, 吴笛, 王乃彦, 郝艳梅 2017 核电子学与探测技术 37 559 Google Scholar Huang J W, Li D H, Dang Y L, Wu D, Wang N Y, Hao Y M 2017 Nucl. Electron. Detect. Technol. 37 559 Google Scholar
[4]	Zeil K, Kraft S D, Jochmann A, Kroll F, Jahr W, Schramm U, Karsch L, Pawelke J, Hidding B, Pretzler G 2010 Rev. Sci. Instrum. 81 013307 Google Scholar
[5]	Gales S G, Bentley C D 2004 Rev. Sci. Instrum. 75 4001 Google Scholar
[6]	Busold1 S, Philipp K, Otten A, Roth M 2014 Rev. Sci. Instrum. 85 113306 Google Scholar
[7]	孙力, 王永生, 董金凤, 何志毅, 徐征 2001 激光与红外 31 269 Google Scholar Sun L, Wang Y S, Dong J F, He Z Y, Xu Z 2001 Laser Infrared 31 269 Google Scholar
[8]	Bonnet T, Comet M, Denis-Petit D, Gobet F, Hannachi F, Tarisien M, Versteegen M, Aléonard M M 2013 Rev. Sci. Instrum. 84 103510 Google Scholar
[9]	Bonnet T, Comet M, Denis-Petit D, Gobet F, Hannachi F, Tarisien M, Versteegen M, Aleonard M M 2013 Rev. Sci. Instrum. 84 103508 Google Scholar
[10]	Williams G, Jackson M, Brian R, Chen H, Kojima S 2014 Rev. Sci. Instrum. 85 11E604 Google Scholar
[11]	Ohuchi H, Yamadera A, Nakamura T 2000 Nucl. Instrum. Meth. A 450 343 Google Scholar
[12]	Tanaka K A, Yabuuchi T, Sato T, Kodama R, Kitagawa Y, Takahashi T, Ikeda T, Honda Y, Okuda S 2005 Rev. Sci. Instrum. 76 013507 Google Scholar
[13]	Chen H, Back N L, Bartal T, Beg F N, Eder D C, Link A J, MacPhee A G, Ping Y, Song P M, Throop A, Van Woerkom L 2008 Rev. Sci. Instrum. 79 033301 Google Scholar
[14]	Rabhi N, Bohacek K, Batani D, Boutoux G, Ducret J E, Guillaume E, Jakubowska K, Thaury C, Thfoin I 2016 Rev. Sci. Instrum. 87 053306 Google Scholar
[15]	Singh S, Slavicek T, Hodak R, Versaci R, Pridal P, Kumar D 2017 Rev. Sci. Instrum. 88 075105 Google Scholar
[16]	Takahashi K, Kohda K, Miyahara J 1984 J. Lumi. 31 266
[17]	Von Seggern H, Voigt T, Knüpfer W, Lange G 1988 J. Appl. Phys. 64 1405 Google Scholar
[18]	Von Seggern H 1999 Brazilian J. Phys. 29 254 Google Scholar
[19]	赵辉, 王永生, 徐征, 侯延冰, 徐叙 1998 47 333 Google Scholar Zhao H, Wang Y S, Xu Z, Hou Y B, Xu X 1998 Acta Phys. Sin. 47 333 Google Scholar
[20]	Golovin D O, Mirfayzi S R, Shokita S, Abe Y, Lanl Z, Arikawa Y, Morace A, Pikuz T A, Yogo A 2021 J. Instrum. 16 T02005 Google Scholar
[21]	Qi J M, Zhang F Q, Chen J C, Xie H W 2014 Chin. Phys. C 38 016001 Google Scholar

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