柔性电子技术中的半导体材料性能调控概述

王宙恒; 陈颖; 郑坤炜; 李海成; 马寅佶; 冯雪

doi:10.7498/aps.70.20210095

摘要

利用柔性电子技术对半导体材料性能调控研究具有重大的科学意义及应用价值. 该研究一方面突破了传统应变工程中受限于无机材料硬而脆的特性, 且引入应变多为固定值的局限; 另一方面也为基于无机功能材料的可延展柔性电子器件在大变形环境下的性能评估提供了理论基础. 因此, 柔性电子技术为针对半导体材料或其他功能材料的应变调控提供了一种新方法, 将有望应用在诸多需要材料性能周期性改变的新颖领域之中. 本文将首先简介柔性无机电子技术, 并对其中的两大关键技术: 基于纳米金刚石颗粒的减薄及转印技术进行重点阐述, 并探究两大关键技术对半导体电子器件性能的影响; 随后介绍半导体材料近些年在应变-能带结构耦合关系方向的研究成果, 并以基于屈曲砷化镓纳米薄膜条带及量子阱结构的研究为例, 阐明柔性电子技术运用于半导体材料性能调控的独特优势; 最后展望应变调控半导体特性的应用方向与发展前景.

关键词:

Abstract

Flexible electronics technology plays an important role in regulating the properties of semiconducting materials, leading to the breakthrough in traditional strain engineering that is limited by the rigid and brittle inorganic materials and the fixed strain values. Thereby, the relevant research not only provides a new clue for strain regulation of semiconductor materials or other functional materials, but also lays a theoretical foundation for the performance evaluation of stretchable and flexible electronic devices based on inorganic functional materials in large-deformation environments. In this paper, the research progress of flexible inorganic electronics and strain effects on band structures, especially the property regulation of semiconducting materials in flexible electronics, is reviewed. Firstly, the nano-diamond particles based thinning process and the transfer printing are emphatically expounded with their influence on the properties of semiconducting electronics explored. In addition, the development and application of strain effect on band structure in recent years are introduced. In particular, the strain control based on buckling GaAs nanoribbon and buckling quantum well structure are studied to demonstrate the superior advantage of flexible electronics technology in the property regulation of semiconducting materials. The application and developing trend of strain engineering in the future are prospected finally.

Keywords:

stretchable and flexible electronics /
property regulation of semiconducting materials /
strain effects on band structures /
bulking

作者及机构信息

1.
清华大学航天航空学院, 应用力学教育部重点实验室, 北京　100084

2.
清华大学柔性电子技术研究中心, 北京　100084

3.
浙江清华柔性电子技术研究院, 浙江嘉兴　314000

4.
钱塘科技创新中心, 杭州　310016

通信作者: 冯雪, fengxue@tsinghua.edu.cn

基金项目: 国家自然科学基金(批准号: 11625207, 11902292)和浙江省重点研发计划(批准号: 2020C05004, 2019C05002)资助的课题

Authors and contacts

1.
Ministry of Education Key Laboratory of Applied Mechanics, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China

2.
Center for Flexible Electronics Technology, Tsinghua University, Beijing 100084, China

3.
Institute of Flexible Electronics Technology of Tsinghua University, Zhejiang, Jiaxing 314000, China

4.
Qiantang Science and Technology Innovation Center, Hangzhou 310016, China

Corresponding author: Feng Xue, fengxue@tsinghua.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11625207, 11902292) and Zhejiang Province Key Research and Development Project, China (Grant Nos. 2020C05004, 2019C05002)

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施引文献

图 1 柔性无机电子技术与半导体材料性能调控相结合, 设计优化半导体器件^[6-10]

Fig. 1. Combine flexible inorganic electronics with the property regulation of semiconducting materials to design and optimize semiconductor devices^[6-10].

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图 2 芯片减薄表征及性能测试　(a) 发光二极管(红光, 砷化镓)及光电探测器(硅)减薄后厚度方向和功能层表面SEM图片; 超薄半导体光电器件性能测试: 发光器件(红外光及红光LED)的电致发光(electro luminescence, EL)光谱, 以及光电探测器的绝对光谱响应(absolute specular reflectance, ASR)^[15,16]. (b) MOS管减薄后光镜图; 减薄前后转移特性曲线及输出特性曲线对比

Fig. 2. Characterization and properties of the thin-film semiconductors fabricated by thinning process: (a) SEM images show the thickness of the ultrathin red light LED and photodetector. Insets is the microstructure of the chips after thinning via the nano-diamond thinning process. Electroluminescence (electro luminescence, EL) spectra of light-emitting elements (infrared light and red light) and the absolute spectral responsibility (absolute specular reflectance, ASR) of photodetector used in the skin-like device^[15,16]; (b) optical image of the MOSFET after thinning process. The comparison of transfer characteristics at V_d = 3 V and output characteristics at V_g = 3 V of MOSFET between thin-film and original semiconductors.

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图 3 可延展柔性结构设计　(a) 单晶硅条带在PDMS基体上形成波浪结构的扫描电子显微镜照片^[5]; (b) 砷化镓纳米条带在PDMS基体部分粘合形成波浪结构的扫描电子显微镜照片^[20]; (c) 硅纳米薄膜在PDMS基体上的岛桥结构扫描电子显微镜照片^[22,23]; (d) 蛇形导线岛桥结构互连的可拉伸CMOS反相器阵列的扫描电子显微镜照片^[22,23]

Fig. 3. Designs of the flexible and stretchable structure: (a) SEM images of wavy, single-crystal Si ribbons^[5]; (b) SEM images of an array of gallium arsenide nanoribbons in buckled shapes where bonding to the PDMS substrate occurs only at the positions of the troughs, as illustrated in the top inset^[20]; (c) SEM image of a silicon nanomembrane in a buckled, mesh layout on PDMS^[22,23]; (d) SEM images of an array of stretchable CMOS inverters with noncoplanar bridges that have serpentine layouts^[22,23].

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图 4 转印技术　(a) 基于率相关印章的转印技术^[32]; (b) 基于磁控的转印技术^[38]; (c) 基于液滴的转印技术^[39]

Fig. 4. Transfer printing techniques: (a) Kinetically controlled transfer printing^[32]; (b) magnetically actuated transfer printing^[38]; (c) transfer printing using droplet stamps^[39].

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图 5 可延展柔性传感器在健康医疗中的应用　(a) 用于神经电刺激与电信号采集的螺旋电极^[53]; (b) 与假手集成的柔性触觉传感器^[54]; (c) 可延展柔性血氧及血压监测系统^[16]

Fig. 5. Applications of stretchable and flexible electronics: (a) Climbing-inspired twining electrodes using shape memory for peripheral nerve stimulation and recording^[53]; (b) flexible tactile sensor integrated with a soft prosthetic hand^[54]; (c) wearable skin-like optoelectronic systems for cuff-less continuous blood pressure monitor^[16].

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图 6 低维材料中的应变-能带结构耦合关系　(a) 单轴拉伸调控氧化锌纳米线^[77]; (b) 单轴拉压调控GaAs/Al_0.3Ga_0.7As/GaAs核壳结构纳米线^[78]; (c) 双轴应变调控单层二硫化钼薄膜^[80]

Fig. 6. Applications of strain effects on band structures to low-dimensional materials: (a) The shifts of the near-band-edge (NBE) peak for the 100 nm nano-wire (NW) by tension and the photon energy versus strain curves for ZnO NWs with different diameters^[77]; (b) schematic of a GaAs-Al_0.3Ga_0.7As-GaAs core-shell nanowire and photoluminescence (PL) spectra measured for different values of applied uniaxial stress^[78]; (c) the monolayer MoS₂ bulged up or down depending on whether Δp is positive or negative and in situ measurements of PL spectra for a monolayer device^[80].

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图 7 锗材料中的应变-能带结构耦合关系　(a) 双轴应变调控锗纳米薄膜^[86]; (b) 锗微桥应变结构及光致发光谱(室温)^[87]; (c) 单轴拉应变锗DBR激光器及不同泵浦光功率下的光致发光谱(80 K)^[88]

Fig. 7. Applications of strain effects on band structures to Ge material: (a) Ge nanomembranes(NMs) and schematic sample mount and PL spectra of a 40 nm thick Ge NM at different levels of biaxial tensile strain^[86]; (b) differential interference contrast light-microscopy image of a Ge/SOI structure and μPL spectra taken from structures with increasing longitudinal strain up to 3.1% and excitation in the center of the constriction^[87]; (c) Schematic illustration of a typical Ge nanowire laser consisting of a strained nanowire surrounded by a pair of distributed Bragg reflectors (DBRs) on the stressing pads and power-dependent photoluminescence spectra of a 1.6% strained Ge nanowire with DBRs showing a gradual transition from broad spontaneous emission to multimode lasing oscillation (threshold, 3.0 kW/cm²)^[88].

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图 8 功能纳米条带屈曲图及能隙与形貌叠加图^[89]　(a) GaAs纳米条带屈曲制备流程示意图; (b) 屈曲条带光镜图及3D形貌图; (c) 单个周期内GaAs的能隙变化与形貌变化叠加图

Fig. 8. Buckling-based method for measuring the strain-photonic coupling effect of GaAs nanoribbons^[89]: (a) Schematic procedures of fabricating the Al_xGa_1–_xAs wavy geometry on PDMS; (b) optical microscope image, 3D microstructure, and profile details of a single ribbon for three samples; (c) band gap mapping by PL scanning within one period in the wavy ribbon.

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图 9 半导体量子阱结构的应变调控^[92]　(a) Al_0.3Ga_0.7As/GaAs/Al_0.3Ga_0.7As量子阱结构屈曲制备流程示意图; (b) 量子阱结构屈曲条带的能隙分布; (c) 量子阱结构实现能隙调控优化示意图

Fig. 9. Strain engineering in quantum well embedded in wavy nanoribbons^[92]: (a) Schematic procedures of fabricating the wavy quantum well nanoribbons (QWNRs) on PDMS; (b) strain effect on the photonic property of the wavy QWNR; (c) band gap variation of a single QWNR as a function of wave intensity A/λ and the location of QW r/d within the fracture limit of the nanoribbon.

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