霍尔天平材料的多场调控

张静言; 窦鹏伟; 赵云驰; 张石磊; 刘佳强; 祁杰; 吕浩昌; 刘若洋; 于广华; 姜勇; 沈保根; 王守国

doi:10.7498/aps.70.20201799

摘要

霍尔天平材料中层间耦合作用易于调控, 基于此可以实现多组态磁存储模式, 其区别于当前基于自旋阀或者磁性隧道结的传统二组态磁存储原理. 与此同时, 还可以在存储单元中实现信息的逻辑运算从而提高器件整体的运算效率. 这一设计有利于自旋电子学器件的微型化、集成化, 有望从物理原理上解决当前基于自旋阀或者磁性隧道结的传统二组态自旋电子学材料器件的技术瓶颈, 进一步提高磁存储密度, 为推动新型自旋电子学材料的研究开辟了一条新的研究思路. 首先, 本综述将介绍基于霍尔天平材料的磁存储器件的研究背景; 其次, 重点介绍霍尔天平存储逻辑器件一体化设计的提出与发展历程; 再次, 介绍霍尔天平材料关键指标—霍尔电阻比值的界面调控及物理机理探索; 随后详细阐述霍尔天平体系中磁性斯格明子的产生与多场调控等动态行为. 最后, 简单介绍霍尔天平结构在其他相关材料中的扩展、应用, 并展望其在未来器件应用中的前景.

关键词:

Abstract

To break through the conventional binary storage based on spin valves and magnetic tunnel junctions, multi-state storage has been successfully achieved in Hall balance. Meanwhile, logic operation can be realized in the storage cell of Hall balance to improve the operation efficiency. Therefore, the concept of Hall balance will benefit the device integration, which provides an effective insight into fabricating the development of spintronics. In this topical review article, firstly the background of memory based on Hall balance is introduced. Secondly, the concept and recent progress of Hall balance are briefly summarized. Thirdly, the manipulation of anomalous Hall resistance ratio (HRR) and its physical mechanism is systematically investigated. Furthermore, magnetic skyrmions and their dynamics in Hall balance are presented in detail. Finally, the application of Hall balance to other kinds of materials is discussed and prospects its future.

Keywords:

作者及机构信息

1.
北京科技大学材料科学与工程学院, 北京材料基因工程高精尖创新中心, 北京　100083

2.
中国科学院物理研究所, 磁学国家重点实验室, 北京　100190

3.
上海科技大学物质科学与技术学院, 上海　201210

通信作者: 王守国, sgwang@ustb.edu.cn

作者简介:

王守国, 北京科技大学教授、博导、国家杰出青年基金获得者、国家重点研发计划首席科学家.　　1996年本科毕业于安徽大学, 获理学学士学位; 2001年研究生毕业于中国科学院固体物理研究所, 获凝聚态物理博士学位; 2001年至2007年, 先后在新加坡国立大学、德国马普微结构物理研究所和英国牛津大学从事研究工作; 2007年底回国, 加入中国科学院物理研究所磁学国家重点实验室; 2015年12月调入北京科技大学材料科学与工程学院.　　主持的项目主要包括: 国家重点研发计划、国家杰出青年基金、基金委重点项目、国家重大科学仪器设备开发专项子课题、中科院仪器研制项目、基金委面上项目、科技部中国—以色列国际合作项目等. 共发表SCI学术论文150余篇, 其中包括Adv. Mater., Nature Commun., Phys. Rev. Lett., J. Am. Chem. Soc., Phys. Rev. B, Appl. Phys. Lett., Nanoscale, ACS Appl. Mater. & Interfaces等杂志.　　目前担任中国电子学会应用磁学分会副主任委员兼秘书长、中国材料研究学会纳米材料与器件分会副理事长、中国物理学会第十二届科普工作委员会副主任、中国金属学会功能材料分会副秘书长、中国金属学会材料科学分会常务理事; 中国材料研究学会青年工作委员会常务理事等. 担任Rare Metals (稀有金属英文版)和International Journal of Minerals, Metallurgy and Materials等杂志编委

基金项目: 国家重点研发计划(批准号: 2019YFB2005800)、国家自然科学基金(批准号: 11874082, 51625101, 51961145305, 51971026)和北京市自然科学基金重点项目(批准号: Z190007)资助的课题

Authors and contacts

1.
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China

2.
State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

3.
School of Physical Science and Technology, Shanghai Technology University, Shanghai 201210, China

Corresponding author: Wang Shou-Guo, sgwang@ustb.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2019YFB2005800), the National Natural Science Foundation of China (Grant Nos. 11874082, 51625101, 51961145305, 51971026), and the Key Program of the Natural Science Foundation of Beijing, China (Grant No. Z190007)

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施引文献

图 1 (a)磁性隧道结Fe(25)/MgO(3)/Fe(10)/IrMn(10) (厚度单位均为纳米)中的R-H输出曲线^[21]; (b)霍尔天平CoO(10)/[Co(0.3)/Pt(1)]₃/NiO(1.1)/Pt(0.6)/[Co(0.3)/Pt(1)]₃/CoO(10) (厚度单位均为纳米)中的R-H输出曲线

Fig. 1. (a) R-H loops for the magnetic tunnel junction with the structure of Fe(25)/MgO(3)/Fe(10)/IrMn(10) (in nm)^[21]; (b) R-H loop for Hall balance with the structure of CoO(10)/[Co(0.3)/Pt(1)]₃/NiO(1.1)/Pt(0.6)/[Co(0.3)/Pt(1)]₃/CoO(10) (in nm).

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图 2 (a)正常霍尔效应和(b)反常霍尔效应原理图

Fig. 2. Schematic of (a) ordinary Hall effect and (b) anomalous Hall effect.

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图 3 (a)基于NiO的霍尔天平R-H曲线; (b)基于霍尔天平的3D存储阵列示意图^[42]

Fig. 3. (a) R-H loop for Hall balance based on NiO spacer; (b) schematic of 3D storage based on Hall balance^[42].

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图 4 基于霍尔天平存储单元的基本布尔逻辑运算输出曲线及真值表^[42]

Fig. 4. Boolean logic operation in storage cell based on Hall balance and truth table ^[42].

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图 5 (a)自旋算盘设计示意图; (b)基于NiO隔离层的自旋算盘霍尔输出曲线^[44]

Fig. 5. (a) Schematic of magnetic abacus memory; (b) Hall loop for the magnetic abacus based on NiO spacer^[44].

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图 6 (a)样品NiO(20)/[Co(0.4)/Pt(1.2)]/MgO/[Co(0.4)/Pt(1.2)]/NiO(1) (nm)的霍尔输出曲线; (b)样品NiO(50)/Pt(0.6)/[Co(0.3)/Pt(1)]/NiO/[Co(0.4)/Pt(1.2)] (单位: nm)的霍尔输出曲线^[42]

Fig. 6. (a) Hall loop for the sample NiO(20)/[Co(0.4)/Pt(1.2)]/MgO/[Co(0.4)/Pt(1.2)]/NiO(1) (in nm); (b) Hall loop for the sample NiO(50)/Pt(0.6)/[Co(0.3)/Pt(1)]/NiO/[Co(0.4)/Pt(1.2)] (in nm) ^[42].

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图 7 (a)−(c)样品Pt(0.6)/[Co(0.4)/Pt(1)]₃/Co(0.4)/Pt(0.3)/NiO(t_NiO)/Pt(0.3)/[Co(0.4)/Pt(1)]₄ (厚度单位为纳米)的霍尔曲线; (d)−(f)样品Pt(0.6)/[Co(0.4)/Pt(1)]₃/Co(0.4)/Pt(0.3)/NiO(1.1)/Pt(0.3)/[Co(0.4)/Pt(t_Pt)]₄(厚度单位均为纳米)样品的霍尔输出曲线^[48]

Fig. 7. (a)−(c) Hall loops for the sample Pt(0.6)/[Co(0.4)/Pt(1)]₃/Co(0.4)/Pt(0.3)/NiO(t_NiO)/Pt(0.3)/[Co(0.4)/Pt(1)]₄ (in nm); (d)−(f) Hall loops for the sample Pt(0.6)/[Co(0.4)/Pt(1)]₃/Co(0.4)/Pt(0.3)/NiO(1.1)/Pt(0.3)/[Co(0.4)/Pt(t_Pt)]₄ (in nm)^[48].

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图 8 (a)−(d)样品CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(t_NiO)/[Co(0.4)/Pt(0.6)]₄/CoO(3)(厚度单位为纳米)的霍尔回线^[48]

Fig. 8. (a)−(d) Hall loops for the sample CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(t_NiO)/[Co(0.4)/Pt(0.6)]₄/CoO(3) (in nm)^[48].

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图 9 (a)样品CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(1)/[Co(0.4)/Pt(0.6)]₄/CoO(3)(厚度单位均为纳米)低倍透射电镜照片; (b)上述样品的选区电子衍射花样照片^[48]

Fig. 9. (a) Transmission electron microscope (TEM) image and (b) electron diffraction pattern for the sample CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(1)/[Co(0.4)/Pt(0.6)]₄/CoO(3) (in nm)^[48].

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图 10 样品CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(1)/[Co(0.4)/Pt(0.6)]₄/CoO(3)(厚度单位均为纳米)高分辨透射电镜照片^[48]

Fig. 10. High resolution TEM image for the sample CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(1)/[Co(0.4)/Pt(0.6)]₄/CoO(3) (in nm)^[48]

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图 11 (a)−(d)样品CoO/[Co/Pt]₃/Co/Pt(t_B)/NiO(1.1)/[Co/Pt]₄/CoO(厚度单位为纳米)的霍尔回线^[49]

Fig. 11. (a)−(d) Hall loops for sample CoO/[Co/Pt]₃/Co/Pt(t_B)/NiO(1.1)/[Co/Pt]₄/CoO (in nm)^[49]

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图 12 (a)−(d)样品CoO/[Co/Pt]₄/NiO(1.1)/Pt(t_T)/[Co/Pt]₄/CoO(厚度单位为纳米)的霍尔回线^[49]

Fig. 12. (a)−(d) Hall loops for the sample CoO/[Co/Pt]₄/NiO(1.1)/Pt(t_T)/[Co/Pt]₄/CoO (in nm)^[49].

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图 13 (a), (b)Co/NiO界面和NiO/Co界面上高分辨Co 2p XPS图谱; (c)界面CoO_x/Co比率随Pt厚度变化规律; (d)界面Pt 4f结合能随界面Pt厚度变化规律^[49]

Fig. 13. (a), (b) High resolution XPS Co 2p spectra at Co/NiO interface and NiO/Co interface; (c) interfacial CoO_x/Co content and (d) Pt 4f binding energy as a function of the Pt thickness at interfaces^[49].

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图 14 (a)霍尔天平的结构示意图; (b)具有铁磁耦合和反铁磁耦合霍尔天平的垂直膜面方向的磁滞回线; (c)霍尔天平的交换耦合场和(d)饱和磁化强度随NiO厚度变化规律^[88]

Fig. 14. (a) Schematic of Hall balance in L-TEM measurement; (b) normalized M-H loops for the sample with ferromagnetic coupling and antiferromagnetic coupling, respectively; (c) shifted field and (d) saturation magnetization as a function of NiO thickness^[88].

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图 15 (a), (b)铁磁耦合和反铁磁耦合霍尔天平基态下的洛伦兹透射电镜照片; (c), (d)铁磁耦合和反铁磁耦合霍尔天平激励后的洛伦兹透射电镜照片^[88]

Fig. 15. L-TEM images for Hall balance at ground state with (a) ferromagnetic coupling and (b) antiferromagnetic coupling, respectively. High density of skyrmions in a Hall balance after drawing excitation with (c) ferromagnetic coupling and (d) antiferromagnetic coupling, respectively^[88].

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图 16 (a), (b)和(c)分别是不同角度下的霍尔天平中的磁性斯格明子^[88]

Fig. 16. (a), (b), (c) Magnetic skyrmions in a Hall balance with various tilting angle^[88].

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图 17 (a)和(b)分别是低场下和高场下具有反铁磁耦合霍尔天平的极化中子反射谱图; (c)具有反铁磁耦合的霍尔天平自旋结构示意图; (d)和(e)分别是低场下和高场下具有铁磁耦合霍尔天平的极化中子反射谱图; (f)具有铁磁耦合的霍尔天平自旋结构示意图^[88]

Fig. 17. PNR spectra as a function of Q measured with in-plane (a) low and (b) high magnetic fields for the Hall balance with antiferromagnetic coupling; (c) schematic of the magnetic structure of the Hall balance with antiferromagnetic coupling; PNR spectra as a function of Q measured with in-plane (d) low and (e) high magnetic fields for the Hall balance with ferromagnetic coupling; (f) schematic of the magnetic structure of the Hall balance with ferromagnetic coupling^[88].

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图 18 (a)具有不同层间耦合强度的霍尔天平中的基态和激励后的磁性斯格明子; (b)基态下霍尔天平中磁性斯格明子密度随E_IEC和θ变化的相图; (c)外部激励撤除后霍尔天平中磁性斯格明子个数随层间耦合强度的变化规律曲线^[88]

Fig. 18. (a) Simulated skyrmions in a Hall balance with various E_IEC; (b) contour map of the skyrmion density as a function of E_IEC and θ without external excitation; (c) the skyrmion number as a function of E_IEC in Hall balance with drawing excitation^[88].

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图 19 (a)不同温度下SRO/STO/SRO霍尔天平的反常霍尔曲线; (b)霍尔信号符号翻转温度附近的输出曲线放大图; (c) SRO/STO/SRO霍尔天平双通道霍尔电阻贡献解析图^[97]

Fig. 19. (a) Hall loops for the SRO/STO/SRO Hall balance under various temperature; (b) enlarged Hall loops in the vicinity of the sign reversal temperature; (c) Hall resistance in SRO/STO/SRO Hall balance^[97].

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