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利用固源分子束外延设备生长出InAs/InAlAs/InP(001)纳米结构材料, 探讨了As压调制的InAlAs超晶格对InAs纳米结构形貌的影响. 结果表明, As压调制的InAlAs超晶格能控制InAs量子线的形成, 导致高密度均匀分布的量子点的生长. 结果有利于进一步理解量子点形貌控制机理. 分析认为, InAs纳米结构的形貌主要由InAlAs层的各向异性应变分布和In吸附原子的各向异性扩散所决定.
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关键词:
- InAlAs超晶格 /
- InAs纳米结构形貌 /
- As压调制
InAs/InAlAs/InP(001) nanostructure materials are grown using solid-source molecular beam epitaxy equipment. Effect of As pressure-modulated InAlAs superlattice on the morphology of InAs nanostructure is investigated. The results show that As pressure-modulated InAlAs superlattice can suppress the quantum wires formation and results in quantum dot growth with a uniform size distribution. The analysis indicates that the morphology of InAs nanostructure is caused mainly by the anisotropic strain relaxation of InAlAs layers and the anisotropic surface migration of In adatoms.-
Keywords:
- InAlAs superlattice /
- InAs nanastructures /
- As pressure-modulated
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[3] L X Q, Jin P, Chen H M, Wu Y H, Wang F F, Wang Z G 2013 Chin. Phys. Lett. 30 118102
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[8] Li Y F, Lin F, Xu B, Liu F Q, Ye X L, Ding D, Wang Z G 2001 J. Cryst. Growth 223 518
[9] Fafard S, Wasilewski Z, McLaffrey J, Raymond S 1996 Appl. Phys. Lett. 68 991
[10] Li H X, Wu J, Wang Z G 1999 Appl. Phys. Lett. 75 1173
[11] Strel V V, Lytvyn P M, Kolomys A F, Valakh M Y, Mazur Y I, Wang Z M, Salamo G J 2007 Semiconductor 4173
[12] Jiao Y H, Wu J, Xu B, Jin P, Hu L J, Liang L Y, Ren Y Y, Wang Z G 2006 Nanotechnology 17 5846
[13] Zhang Z H, Cheng K Y 2003 Appl. Phys. Lett. 83 3183
[14] Brault J, Gendry M, Grenet G 2002 J. Appl. Phys. 92 506
[15] Zhang S B, Zunger A 1996 Phys. Rev. B 53 1343
[16] Cotta M A, Hamm R A, Staley T W, Chu S N G, Harriott L R, Panish M B 1993 Phys. Rev. Lett. 70 4106
[17] Horikoshi Y, Yamaguchi H, Briones F, Kawashima M 1990 J. Cryst. Growth 105 326
[18] Praseuth J P, Goldstein L, Henoc P, Primot J 1987 J. Appl. Phys. 61 215
[19] Konkar A, Madhukar A, Chen P 1998 Appl. Phys. Lett. 72 220
[20] Glas F 1987 J. Appl. Phys. 62 3201
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[1] Arakawa Y, Sakaki H 1998 Appl. Phys. Lett. 40 939
[2] Zhang S Z, Ye X L, Xu B, Liu S M, Zhou W F, Wang Z G 2013 Chin. Phys. Lett. 30 087804
[3] L X Q, Jin P, Chen H M, Wu Y H, Wang F F, Wang Z G 2013 Chin. Phys. Lett. 30 118102
[4] Weber A, Gauthier-Lafaye O, Julien F H, Brault J, Gendry M, Desiéres Y, Benyattou T 1999 Appl. Phys. Lett. 74 413
[5] Finkman E, Maimon S, Immer V, Bahir G, Schacham S E, Fossard F, Julien F H, Brault J, Gendry M 2001 Phys. Rev. B 63 045323
[6] Shin B, Lin A, Lappo K, Goldman R S, Hanna M C, Francoeur S, Norman A G, Mascarenhas A 2002 Appl. Phys. Lett. 80 3292
[7] Zhao F A, Chen Y H, Ye X L, Jin P, Xu B, Wang Z G, Zhang C L 2004 J. Phys. Condens. Matter 16 7603
[8] Li Y F, Lin F, Xu B, Liu F Q, Ye X L, Ding D, Wang Z G 2001 J. Cryst. Growth 223 518
[9] Fafard S, Wasilewski Z, McLaffrey J, Raymond S 1996 Appl. Phys. Lett. 68 991
[10] Li H X, Wu J, Wang Z G 1999 Appl. Phys. Lett. 75 1173
[11] Strel V V, Lytvyn P M, Kolomys A F, Valakh M Y, Mazur Y I, Wang Z M, Salamo G J 2007 Semiconductor 4173
[12] Jiao Y H, Wu J, Xu B, Jin P, Hu L J, Liang L Y, Ren Y Y, Wang Z G 2006 Nanotechnology 17 5846
[13] Zhang Z H, Cheng K Y 2003 Appl. Phys. Lett. 83 3183
[14] Brault J, Gendry M, Grenet G 2002 J. Appl. Phys. 92 506
[15] Zhang S B, Zunger A 1996 Phys. Rev. B 53 1343
[16] Cotta M A, Hamm R A, Staley T W, Chu S N G, Harriott L R, Panish M B 1993 Phys. Rev. Lett. 70 4106
[17] Horikoshi Y, Yamaguchi H, Briones F, Kawashima M 1990 J. Cryst. Growth 105 326
[18] Praseuth J P, Goldstein L, Henoc P, Primot J 1987 J. Appl. Phys. 61 215
[19] Konkar A, Madhukar A, Chen P 1998 Appl. Phys. Lett. 72 220
[20] Glas F 1987 J. Appl. Phys. 62 3201
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