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用LaB6灯丝200 kV高分辨透射电镜拍摄了有小角晶界的3C-SiC/(001)Si 薄膜的[110]高分辨电子显微像. 用像解卷技术把本不直接反映晶体结构的实验像转化为结构像. 首先, 从完整区的结构像中分辨开间距仅为0.109 nm的Si和C原子柱; 随后按赝弱相位物体近似像衬理论, 分析像衬随晶体厚度的变化规律, 辨认出Si和C原子; 进而在原子水平上得出小角晶界附近两个复合位错的核心结构, 构建了结构模型并计算了模拟像. 实验像与模拟像的一致程度验证了结构模型的正确性. 于是, 在已知完整晶体结构的前提下, 仅从一帧实验高分辨像出发, 推演出原子的种类和位错核心的原子组态. 还讨论了3C-SiC 小角晶界的形成与晶界附近出现复合位错的关系.[110] images are taken for 3C-SiC/(001)Si hetero epitaxial films containing small-angle grain boundaries by using a 200 kV LaB6 filament high-resolution transmission electron microscope. Deconvolution processing is performed to transform the experimental images which do not represent intuitively the projected crystal structure into structure images. First, Si and C atomic columns with a distance of 0.109 nm are resolved in a perfect structure image region, and then recognized from each other by analyzing the image contrast change with sample thickness based on the pseudo-weak phase object approximation. Subsequently, two complex dislocation cores located in the vicinity of small-angle grain boundaries are obtained at an atomic level, and the atomic structure models are constructed and confirmed by matching the experimental images with the simulated ones. Hence, the atomic configurations of dislocation cores are derived from only a single experimental image with the average structure of perfect crystal known in advance. The formation of small-angle grain boundaries in 3C-SiC/Si with the occurence of complex dislocations in their vicinity is discussed.
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Keywords:
- image deconvolution /
- low-angle grain boundary /
- dislocation core structure /
- 3C-SiC
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[2] Davis R F, Kelner G, Shur M, Palmour J W, Edmond J A 1991 Proc. IEEE 79 677
[3] Inamoto S, Yamasaki J, Tamaki H, Tanaka N 2011 Philos. Mag. Lett. 91 632
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[7] Izui K, Furuno S, Nishida T, Otsu H 1978-79 Chem. Scr. 14 99
[8] Amelinckx S 1978-79 Chem. Scr. 14 197
[9] Shen X, Cheng D, Zhao H F, Yao Y, Liu X Y, Yu R C 2013 Chin. Phys. B 22 116102
[10] Ichinose H 2000 Sci. Technol. Adv. Mat. 1 11
[11] Chen J H, Zandbergen H W, van Dyck D 2004 Ultramicroscopy 98 81
[12] Heuer A H, Jia C L, Lagerlöf K P D 2010 Science 330 1227
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[14] Kirkland E J 1984 Ultramicroscopy 15 151
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[19] Han F S, Fan H F, Li F H 1986 Acta Crystallogr. A 42 353
[20] Li F H 2005 Sci. Technol. Adv. Mat. 6 755
[21] Li F H 2010 Phys. Stat. Sol. A 207 2639
[22] He W Z, Li F H, Chen H, Kawasaki K, Oikawa T 1997 Ultramicroscopy 70 1
[23] Shiojiri M, Kaito C, Sekimoto S, Nakamura N 1982 Philos. Mag. A 46 495
[24] Wang D, Li F H, Zou J 2000 Ultramicroscopy 85 131
[25] Wang D, Chen H, Li F H, Kawasaki K, Oikawa T 2002 Ultramicroscopy 93 139
[26] Wang D, Zou J, He W Z, Chen H, Li F H, Kawasaki K, Oikawa T 2004 Ultramicroscopy 98 259
[27] Tang C Y, Li F H, Wang R, Zou J, Zheng X H, Liang J W 2007 Phys. Rev. B 75 184103
[28] Wen C, Wang Y M, Wan W, Li F H, Liang J W, Zou J 2009 J. Appl. Phys. 106 073522
[29] Wen C, Li F H, Zou J, Chen H 2010 Acta Phys. Sin. 59 1928 (in Chinese) [温才, 李方华, 邹进, 陈弘 2010 59 1928]
[30] Wan W, Tang C Y, Wang Y M, Li F H 2005 Acta Phys. Sin. 54 4273 (in Chinese) [万威, 唐春艳, 王玉梅, 李方华 2005 54 4273]
[31] Cui Y X, Wang Y M, Wen C, Ge B H, Li F H, Chen Y, Chen H 2013 Ultramicroscopy 126 77
[32] Li F H 2009 Electron Crystallography and Image Processing (Shanghai: Shanghai Scientific and Technical Publishers) pp259-386 (in Chinese) [李方华 2009 电子晶体学与图像处理 (上海: 上海科学技术出版社) 第259–386页]
[33] Thon F 1966 Z. Naturforsch. A 21 476
[34] Li F H, Wang D, He W Z, Jiang H 2000 J. Electron Microsc. 49 17
[35] Li F H, Tang D 1985 Acta Cryst. A41 376
[36] Tang C Y, Li F H 2005 J. Electron Microsc. 54 445
[37] Cowley J M, Moodie A F 1957 Acta Cryst. 10 609
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[1] Nishino S, Powell J A, Will H A 1983 Appl. Phys. Lett. 42 460
[2] Davis R F, Kelner G, Shur M, Palmour J W, Edmond J A 1991 Proc. IEEE 79 677
[3] Inamoto S, Yamasaki J, Tamaki H, Tanaka N 2011 Philos. Mag. Lett. 91 632
[4] Yamasaki J, Inamoto S, Nomura Y, Tamaki H, Tanaka N 2012 J. Phys. D: Appl. Phys. 45 494002
[5] Cowley J M, Iijma S 1972 Z. Naturforsch. A 27 445
[6] Uyeda N, Kobayash T, Suito E, Harada Y, Watanabe M 1972 J. Appl. Phys. 43 5181
[7] Izui K, Furuno S, Nishida T, Otsu H 1978-79 Chem. Scr. 14 99
[8] Amelinckx S 1978-79 Chem. Scr. 14 197
[9] Shen X, Cheng D, Zhao H F, Yao Y, Liu X Y, Yu R C 2013 Chin. Phys. B 22 116102
[10] Ichinose H 2000 Sci. Technol. Adv. Mat. 1 11
[11] Chen J H, Zandbergen H W, van Dyck D 2004 Ultramicroscopy 98 81
[12] Heuer A H, Jia C L, Lagerlöf K P D 2010 Science 330 1227
[13] Schiske P 1968 Proceedings of the 4th European Regional Conference on Electron Microscopy Rome, Italy, September 1-7, 1968 p145
[14] Kirkland E J 1984 Ultramicroscopy 15 151
[15] Saxton W O 1986 Proceedings of the 11th International Congress on Electron Microscopy Kyoto, Japan, August 31-September 7, 1986 p26
[16] Thust A, Coene W M J, Op de Beeck M, van Dyck D 1996 Ultramicroscopy 64 211
[17] Hsieh W K, Chen F R, Kai J J, Kirkland A I 2004 Ultramicroscopy 98 99
[18] Li F H, Fan H F 1979 Acta Phys. Sin. 28 276 (in Chinese) [李方华, 范海福 1979 28 276]
[19] Han F S, Fan H F, Li F H 1986 Acta Crystallogr. A 42 353
[20] Li F H 2005 Sci. Technol. Adv. Mat. 6 755
[21] Li F H 2010 Phys. Stat. Sol. A 207 2639
[22] He W Z, Li F H, Chen H, Kawasaki K, Oikawa T 1997 Ultramicroscopy 70 1
[23] Shiojiri M, Kaito C, Sekimoto S, Nakamura N 1982 Philos. Mag. A 46 495
[24] Wang D, Li F H, Zou J 2000 Ultramicroscopy 85 131
[25] Wang D, Chen H, Li F H, Kawasaki K, Oikawa T 2002 Ultramicroscopy 93 139
[26] Wang D, Zou J, He W Z, Chen H, Li F H, Kawasaki K, Oikawa T 2004 Ultramicroscopy 98 259
[27] Tang C Y, Li F H, Wang R, Zou J, Zheng X H, Liang J W 2007 Phys. Rev. B 75 184103
[28] Wen C, Wang Y M, Wan W, Li F H, Liang J W, Zou J 2009 J. Appl. Phys. 106 073522
[29] Wen C, Li F H, Zou J, Chen H 2010 Acta Phys. Sin. 59 1928 (in Chinese) [温才, 李方华, 邹进, 陈弘 2010 59 1928]
[30] Wan W, Tang C Y, Wang Y M, Li F H 2005 Acta Phys. Sin. 54 4273 (in Chinese) [万威, 唐春艳, 王玉梅, 李方华 2005 54 4273]
[31] Cui Y X, Wang Y M, Wen C, Ge B H, Li F H, Chen Y, Chen H 2013 Ultramicroscopy 126 77
[32] Li F H 2009 Electron Crystallography and Image Processing (Shanghai: Shanghai Scientific and Technical Publishers) pp259-386 (in Chinese) [李方华 2009 电子晶体学与图像处理 (上海: 上海科学技术出版社) 第259–386页]
[33] Thon F 1966 Z. Naturforsch. A 21 476
[34] Li F H, Wang D, He W Z, Jiang H 2000 J. Electron Microsc. 49 17
[35] Li F H, Tang D 1985 Acta Cryst. A41 376
[36] Tang C Y, Li F H 2005 J. Electron Microsc. 54 445
[37] Cowley J M, Moodie A F 1957 Acta Cryst. 10 609
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