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采用532 nm纳秒脉冲激光对热退火的铝(Al)/掺氟二氧化锡(FTO)、铜(Cu)/FTO和银(Ag)/FTO三种双层复合薄膜表面分别进行处理, 结果显示薄膜样品的光电性能都得到提高.其中, 热退火Ag/FTO薄膜的平均透光率(400–800 nm)增幅最大, 从72.6%提高到80.5%, 主要是由于其表面产生了具有减反增透作用的光栅结构.激光辐照后热退火Ag/FTO薄膜的导电性也略有提高, 其方块电阻从5.6 Ω/sq下降到5.3 Ω/sq, 原因主要是激光辐照的热效应造成的退火作用使薄膜的晶粒尺寸增大, 减少了晶界散射而使载流子迁移率提高.计算结果显示, 激光辐照后热退火Ag/FTO薄膜的品质因子从0.73×10-2Ω-1增大为2.16×10-2Ω-1, 表明其综合光电性能得到显著提高.激光辐照可同步实现薄膜表面光栅结构的制备和附加退火作用, 这为金属层复合透明导电薄膜光电性能的综合优化提供了新的思路.Three kinds of bilayer films, i.e. aluminum (Al)/fluorine-doped tin oxide (FTO), copper (Cu)/FTO and silver (Ag)/FTO, are prepared by coating a commercial FTO glass with sputtered metal layers, and subsequently thermally annealed. Then all the as-annealed bilayer films are irradiated using a 532 nm nanosecond pulsed laser. X-ray diffraction (XRD) analysis confirms that all the laser-irradiated films have underwent laser annealing, resulting in an improvement in their photoelectric properties. More significantly, after laser irradiation, the as-annealed Ag/FTO film exhibits the highest increment in average transmittance (400–800 nm) that is increased from 72.6% to 80.5%. This should be attributed mainly to the formation of laser-induced grating structures that have anti-reflection effect on their surfaces. It is also found that the laser irradiation decreases the sheet resistance of the as-annealed Ag/FTO film from 5.6 to 5.3 Ω/sq. The annealing caused by thermal effect of laser irradiation gives rise to an increase in grain size, thereafter reduces carrier scattering at grain boundaries and enhances carrier mobility, which should be responsible for the improvement in conductivity. The calculated results show that after laser irradiation the figure of merit of the as-annealed Ag/FTO film is greatly increased from 0.73×10-2 to 2.16×10-2Ω-1, indicating a significant enhancement in the overall photoelectric property of the film. Laser irradiation can simultaneously achieve fabrication of grating structures and laser annealing, providing a new idea for performance optimization of metal-layer-composited transparent conductive films.
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Keywords:
- transparent conductive film /
- laser irradiation /
- grating structure /
- photoelectric property
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[35] Chen M F, Lin K, Ho Y S 2011 Mater. Sci. Eng. B 176 127
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[1] Wang L, Zhang X D, Yang X, Wei C C, Zhang D K, Wang G C, Sun J, Zhao Y 2014 Acta Phys. Sin. 63 028801 (in Chinese) [王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖 2014 63 028801]
[2] L M S, Pang Z Y, Xiu X W, Dai Y, Han S H 2007 Chin. Phys. 16 0548
[3] Daniel P P, Michael G H, Paul G O, Wang Z B, Navid S, Nazir K, Lu Z H 2011 Nano Lett. 11 1457
[4] Xie J S, Chen Q 2014 Chin. Phys. B 23 097703
[5] Miyata T, Hikosaka T, Minami T 2000 Sens. Actuators B 69 16
[6] Berne‘de J C, Cattin L, Morsli M, Berredjem Y 2008 Sol. Energy Mater. Sol. Cells 92 1508
[7] Sutthana S, Hongsith N, Choopun S 2010 Curr. Appl. Phys. 10 813
[8] Li Z P, Men C L, Wang W, Cao J 2014 Chin. Phys. B 23 057205
[9] Park H K, Kang J W, Na S I, Kim D Y, Kim H K 2009 Sol. Energy Mater. Sol. Cells. 93 1994
[10] Wu C T, Ko F H, Lin C H 2007 Appl. Phys. Lett. 90 171911
[11] Chen H L, Chuang S Y, Lin C H, Lin Y H 2007 Opt. Express 15 14793
[12] Grann E B, Moharam M G, Varga M, Pommet D A 1995 J. Opt. Soc. Am. A 12 333
[13] Li Y P, Li J X, Hao Y Z, Chen T H 2011 J. Funct. Mater. 10 1378 (in Chinese) [李英品, 李俊新, 郝彦忠, 陈铁红 2011 功能材料 10 1378]
[14] Li X, Guo W H, L Z J, Xing J H, Wang M 2014 Acta Phys. Sin. 63 024205 (in Chinese) [李侠, 郭文华, 吕志娟, 邢进华, 王鸣 2014 63 024205]
[15] Mendes P M, Jacke S, Critchley K, Plaza J, Chen Y, Nikitin K, Palmer R E, Preece J A, Evans S D, Fitzmaurice D 2004 Langmuir 20 3766
[16] D'Agostino R, Flamm D L 1981 J. Appl. Phys. 52 162
[17] Lee H, Hong S, Yang K, Choi K 2006 Microelectron. Eng. 83 323
[18] Li B J, Huang L J, Zhou M, Ren N F, Wu B 2014 Cream. Int. 40 1627
[19] Sakabe S, Hashida M, Tokita S, Namba S, Okamuro K 2009 Phys. Rev. B 79 033409
[20] Chan G H, Zhao J, Schatz G C, Van Duyne R P 2008 J. Phys. Chem. C 112 13958
[21] Chen M F, Lin K, Ho Y S 2011 Mater. Sci. Eng. B 176 127
[22] Dimopoulos T, Radnoczi G Z, Horváth Z E, Brckl H 2012 Thin Solid Films 520 5222
[23] Song D, Aberle A G, Xia J 2002 Appl. Surf. Sci. 195 291
[24] Wang Y F, Zhang X D, Huang Q, Yang F, Meng X D, Song Q G, Zhao Y 2013 Acta Phys. Sin. 62 247802 (in Chinese) [王延峰, 张晓丹, 黄茜, 杨富, 孟旭东, 宋庆功, 赵颖 2013 62 247802]
[25] Tseng M F, Hsiao W T, Chiang D, Huang K C, Chou C P 2011 Appl. Surf. Sci. 257 7204
[26] Liu C M, Fang L M, Zu X T, Zhou W L 2007 Chin. Phys. 16 0095
[27] Wang L W, Meng L J, Teixeira V, Song S G, Xu Z, Xu X R 2009 Thin Solid Films 517 3721
[28] Vaissié L, Smolski O V, Mehta A, Johnson E G 2005 IEEE Photonic. Technol. Lett. 17 732
[29] Lu H, Tu Y, Lin X, Fang B, Luo D, Laaksonen A 2010 Mater. Lett. 64 2072
[30] Pankove J I 1971 Optical Processes in Semiconductors (New Jersey: Prentice Hall Inc.) p34
[31] Zhang G H, Deng X Y, Xue H, Xiang G 2013 Chin. Phys. B 22 047803
[32] Kim H, Horwitz J S, Qadri S B, Chrisey D B 2002 Thin Solid Films 420-421 107
[33] Lee S, Seong J, Kim D Y 2010 J. Korean Phys. Soc. 56 782
[34] Shanthi E, Dutta V, Banerjee A, Chopra K L 1980 J. Appl. Phys. 51 6243
[35] Chen M F, Lin K, Ho Y S 2011 Mater. Sci. Eng. B 176 127
[36] Jiang X, Sun C, Hong R J, Dai D H 2008 Transparent Conductive Oxide Films (Beijing: Higher Education Press) p291 (in Chinese) [姜辛, 孙超, 洪瑞江, 戴达煌 2008 透明导电氧化物薄膜(北京: 高等教育出版社) 第291页]
[37] Haacke G 1976 J. Appl.Phys. 47 4086
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