像素偏振片阵列制备及其在偏振图像增强中的应用

张志刚; 董凤良; 张青川; 褚卫国; 仇康; 程腾; 高杰; 伍小平

doi:10.7498/aps.63.184204

摘要

像素偏振片阵列在实时测量光的斯托克斯参量方面具有重要的应用. 本文设计和制作了基于金属铝纳米光栅的像素偏振片阵列，制作工艺基于电子束曝光技术. 偏振片阵列单元尺寸为7.4 μm，每相邻2×2单元的透偏振方向分别为0，π/4，π/2 和3π/4. 光栅周期为140 nm，占空比为0.5，深度100 nm，光栅面型为矩形. 像素偏振片阵列的扫描电子显微镜照片显示，制备的偏振片阵列的金属纳米光栅栅线无断线、无交叉、无杂物污染，光栅栅线结构平直，厚度均匀，满足理想矩形面型. 采用偏振光作为照明光的光学显微镜拍摄图片显示，像素偏振片阵列整体形状规则，具有很好的偏振特性，最大偏振透射率可达到79.3%，消光比可达到454. 将像素偏振片阵列与CCD（charge coupled device）集成在一起，采集单帧图像即可计算图像的斯托克斯参量，从而得到拍摄物体线偏振度图像和线偏振角图像，实现了偏振增强，可应用于目标反隐和识别.

关键词:

Abstract

Pixelated polarizer array can be used in the real-time measurement of Stokes parameters. In this paper, pixelated polarizer array based on the aluminum nano-grating is designed and fabricated, and the fabrication technology is electron beam exposure technology. The size of each unit is 7.4 μm, and the polarization directions of each adjacent 2×2 units in the polarizer array are 0, π/4, π/2, and 3π/4. The period, duty cycle, depth and surface type of the grating are 140 nm, 0.5, 100 nm and rectangle type, respectively. The scanning electron micrographs of the pixelated polarizer array show that there is no disconnection, cross and pollution on the fabricated metal nano-grating lines. The nano-grating lines are straight and uniform in thickness, and the surface type of the grating is ideal rectangular type. The polarization optical micrographs show that the pixelated polarizer array has good polarization characteristics. The maximum polarization transmissivity can reach 79.3%, and the extinction ratio can arrive at 454. Furthermore, the pixelated polarizer array is integrated with the charge coupled devise chip, and the Stokes parameters can be calculated from one frame, then the degree of linear polarization and angle of linear polarization can be obtained. Thus, the polarization enhancement of image is achieved, which can be used in the anti-stealth and recognition.

Keywords:

作者及机构信息

1.
中国科学技术大学近代力学系, 中国科学院材料力学行为与设计重点实验室, 合肥 230027;

2.
国家纳米科学中心纳米加工技术实验室, 北京 100190

基金项目: 国家重点基础研究发展计划（批准号：2011CB302105）、国家自然科学基金（批准号：11332010，11102201，11372300）和中国科学院科研装备研制项目（批准号：YZ201265）资助的课题.

Authors and contacts

1.
CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, China;

2.
Nanofabrication Laboratory, National Center for Nanoscience and Technology, Beijing 100190, China

Funds: Project supported by the National Basic Research Program of China (Grant No. 2011CB302105), the National Natural Science Foundation of China (Grant Nos. 11332010, 11102201, 11372300), and the Instrument Developing Project of the Chinese Academy of Science (Grant No. YZ201265).

参考文献

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施引文献

[1]	Frish V K 1949 Experientia 5 142
[2]	Collett M, Collett T S, Bisch S, Wehner R 1998 Nature 394 269
[3]	Labhart T 1999 J. Exp. Biol. 201 757
[4]	Shashar N, Rutledge P, Cronin T W 1996 J. Exp. Biol. 199 2077
[5]	Chu J, Zhao K, Zhang Q, Wang T 2008 Sens. Actuators A: Phys. 148 75
[6]	Chu J K, Wang Z W, Zhang Y J, Wang Y L 2012 Opt. Precision Eng. 20 2237(in Chinese)[褚金奎, 王志文, 张英杰, 王寅龙 2012 光学精密工程 20 2237]
[7]	Nordin G P, Meier J T, Deguzman P C, Jones M W 1999 J. Opt. Soc. Am. A 16 1168
[8]	Brock N J, Kimbrugh B T, Millierd J E 2011 Proc. of SPIE San Diego, California, USA, August 21, 2011 p81600W-1
[9]	Li X D, Tao G, Yang Y Z 2011 Opt. Laser Eng. 33 53
[10]	Ma Z C, Xu Z M, Peng J, Sun T Y, Chen X G, Zhao W Y, Liu S S, Wu X H, Zou C, Liu S Y 2014 Acta Phys. Sin. 63 039101(in Chinese)[马智超, 徐智谋, 彭静, 孙堂友, 陈修国, 赵文宇, 刘思思, 武兴会, 邹超, 刘世元 2014 63 039101]
[11]	Kang Y L, Qiu Y, Lei Z K, Hu M 2005 Opt. Laser Eng. 43 847
[12]	Lei Z K, Kang Y L, Qiu Y, Hu M, Cen H 2004 Chin. Phys. Lett. 21 1377
[13]	Zhang Z, Zhang Q, Cheng T, Gao J, Wu X 2013 Opt. Eng. 52 103109
[14]	Wang M, Cen Y W, Yu X L, Hu X F, Zhu P P 2008 Acta Phys. Sin. 57 6202(in Chinese)[汪敏, 岑豫皖, 余晓流, 胡小方, 朱佩平 2008 57 6202]
[15]	Tahara T, Shimozato Y, Xia P, Ito Y, Awatsuji Y, Nishio K, Ura S, Matoba O, Kubota T 2012 Opt. Express 20 19806
[16]	Creath K, Goldstein G 2012 Biomed. Opt. Express 3 2866
[17]	Gruev V 2011 Opt. Express 19 24361
[18]	Zhang Q C, Zhang Z G, Zhao Y, Cheng T, Wu X P 2013 Chinese Patent 201310030039.1 (2013-01-25) (in Chinese)[张青川, 张志刚, 赵旸, 程腾, 伍小平 2013 中国专刊专利申请号: 201310030039.1[2013-01-25]]
[19]	Zhao X, Boussaid F, Bermak A, Chigrinov V G 2011 Opt. Express 19 5565
[20]	Gruev V, Ortu A, Lazarus N, Spiegel J V, Engheta N 2007 Opt. Express 15 4994
[21]	Yang Z Y, Lu Y F 2007 Opt. Express 15 9510
[22]	Meng F T, Chu J K, Han Z T, Guo Q 2009 Acta Photon. Sin. 38 951(in Chinese)[孟凡涛, 褚金奎, 韩志涛, 郭庆 2009 光子学报 38 951]
[23]	Luo Q, Huang L H, Gu N T, Rao C H 2012 Chin. Phys. B 21 094201
[24]	Wang J P, Jin Y X, Ma J Y, Shao J D, Fan Z X 2010 Chin. Phys. B 19 104201
[25]	Yu D, Wang H, Liu H P, Wang J, Jiang Y Y, Sun X D 2011 Chin. Phys. B 20 114217
[26]	Zhang W F, Kong W J, Yun M J, Liu J H, Sun X 2012 Chin. Phys. B 21 094218
[27]	Pan P, An J M, Wang H J, Wang Y, Zhang J S, Wang L L, Dai H Q, Zhang X G, Wu Y D, Hu X W 2014 Chin. Phys. B 23 044210
[28]	Bokor N, Shechter R, Davidson N, Friesem A A, Hasman E 2001 Appl. Opt. 40 2076
[29]	Zhang N, Chu J K, Zhao K C, Meng F T 2006 Chin. J. Sens. Actuat. 19 1739(in Chinese)[张娜, 褚金奎, 赵开春, 孟凡涛 2006 传感技术学报 19 1739]
[30]	Xie H M, Kishimoto S, Shinya N 2000 Opt. Laser Technol. 32 361
[31]	Xie H M, Kishimoto S, Li Y J, Liu Q J, Zhao Y P 2009 Microelectron. Reliab. 49 727
[32]	Zhao Y R, Lei Z K, Xing Y M 2014 Exp. Mech. 54 45
[33]	Xie H M, Dai F L, An B Z, Zhang W 2000 Opt. Tech. 26 526(in Chinese)[谢惠民, 戴福隆, 岸本哲, 张维 2000 光学技术 26 526]
[34]	Gruev V, Perkins R 2010 IEEE International Symposium on Circuits and Systems Paris, France, May 30-June 2, 2010 p629
[35]	Gruev V, Perkins R, York T 2010 Opt. Express 18 19087
[36]	Gruev V, Spiegel J V, Engheta N 2010 Opt. Express 18 19292

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