金属壁与介质窗之间次级电子倍增效应的研究

张雪; 王勇; 范俊杰; 朱方; 张瑞

doi:10.7498/aps.63.167901

摘要

高功率盒形窗内的TM11模法向电场对次级电子倍增现象具有较大的影响，特别是在介质窗片与金属波导壁相对的区域，易发生双面次级电子倍增. 采用蒙特卡罗粒子模拟方法，研究了法向电场作用下氧化铝陶瓷窗片与铜波导壁之间的双面倍增敏感曲线、倍增阈值电压、粒子数量的演变过程以及粒子运动轨迹. 通过对相关参数的分析，获得了金属壁与陶瓷窗片之间双面谐振倍增和非谐振倍增的规律以及双面倍增向单面倍增转变的特点. 此研究可为分析窗片失效机理提供理论依据.

关键词:

Abstract

The multipactor phenomenon between metal wall and dielectric window disk of pill-box window can behave as double surface multipactor, which is affected by the normal electric field of TM11 mode. The Monte Carlo code is used to build up simulation model, calculate the multipactor susceptive curve, threshold voltage, evolution of particle number, and the trajectory of particle motion under the action of double surface normal field between alumina window and copper wall. Through investigating the behavior of secondary electrons, the regularity of normal field double surface resonant multipactor and non-resonant multiapctor is achieved. Besides, the feature of the transform from double-surface multipactor to single-surface multipactor is also obtained. This research can provide a theoretical basis for window breakdown mechanism analysis.

Keywords:

作者及机构信息

1.
中国科学院电子学研究所, 中国科学院高功率微波源与技术重点实验室, 北京 100190;

2.
中国科学院大学, 北京 100149

基金项目: 国家重点基础研究发展计划（批准号：2013CB328901）资助的课题.

Authors and contacts

1.
Key Laboratory of High Power Microwave Sources and Technologies, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China;

2.
University of Chinese Academy of Sciences, Beijing 100149, China

Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2013CB328901).

参考文献

[1]	Hatch A J, Williams H B 1954 J. Appl. Phys. 25 417
[2]	Vaughan J R M 1988 IEEE Trans. Electron. Dev. 35 1172
[3]	Kishek R A, Lau Y Y 1998 Phys. Rev. Lett. 80 193
[4]	Kishek R A 1997 Ph. D. Dissertation (Ann Arbor:University of Michigan)
[5]	Hemmert D, Neuber A A, Dickens J C, Krompholz H, Hatfield L L, Kristiansen M 2000 Proc. SPIE 4031 90
[6]	Neuber A, Hemmert D, Dickens J, Krompholz H, Hatfield L L, Kristiansen M 1998 IEEE Trans. Plasma Sci. 26 296
[7]	Yamaguchi S, Saito Y, Anami S, Michizono S 1992 IEEE Trans. Nucl. Sci. 39 278
[8]	Saito Y, Michizono S, Anami S, Kobayashi S 1993 IEEE Trans. Electr. Insul. 28 566
[9]	Cheng G X 2008 M. S. Dissertation (Changsha: National University of Defense Technology) (in Chinese) [程国新 2008 硕士学位论文(长沙: 国防科学技术大学研究生院)]
[10]	Cheng G X, Cai D, Hong Z Q, Liu L 2013 IEEE Trans. Dielect. Electr. Insul. 20 1942
[11]	Cheng G X, Liu L 2011 Phys. Plasmas 18 033507
[12]	Cheng G X, Liu L 2011 IEEE Trans. Plasma Sci. 39 1067
[13]	Cheng G X, Liu L 2013 Appl. Phys. Lett. 102 243506
[14]	Cai L B, Wang J G 2009 Acta Phys. Sin. 58 3268 (in Chinese) [蔡利兵, 王建国 2009 58 3268]
[15]	Cai L B, Wang J G, Zhu X Q 2011 Acta Phys. Sin. 60 085101 (in Chinese) [蔡利兵, 王建国, 朱湘琴 2011 60 085101]
[16]	Chang C, Fang J Y, Zhang Z Q, Chen C H, Tang C X, Jin Q L 2010 Appl. Phys. Lett. 96 111502
[17]	Chang C, Liu G Z, Huang H J, Chen C H, Fang J Y 2009 Phys. Plasmas 16 083501
[18]	Chang C, Huang H J, Liu G Z, Chen C H, Hou Q 2009 J. Appl. Phys. 105 123305
[19]	Fan J Q, Hao J H 2011 Chin. Phys. B 20 068402
[20]	Li Y, Cui W Z, Zhang N, Wang X B, Wang H G, Li Y D, Zhang J F 2014 Chin. Phys. B 23 048402
[21]	Zhu F, Zhang Z C, Dai S, Luo J R 2011 Acta Phys. Sin. 60 084103 (in Chinese) [朱方, 张兆传, 戴舜, 罗继润 2011 60 084103]
[22]	Rasch J, Johansson J F 2012 Phys. Plasmas 19 123505
[23]	Ang L K, Lau Y Y, Kishek R A, Gilgenbach R M 1998 IEEE Trans. Plasma Sci. 26 290
[24]	Dong Y, Dong Z W, Yang W Y 2011 High Power Laser Particle Beams 23 454 (in Chinese) [董烨, 董志伟, 杨温渊 2011 强激光与粒子束 23 454]
[25]	Kryazhev A, Buyanova M, Semenov V, Anderson D, Lisak M, Puech J, Lapierre L, Sombrin J 2002 Phys. Plasmas 9 4736
[26]	Sazontov A, Buyanova M, Semenov V, Rakova E,Vdovicheva N 2005 Phys. Plasmas 12 053102

施引文献

[1]	Hatch A J, Williams H B 1954 J. Appl. Phys. 25 417
[2]	Vaughan J R M 1988 IEEE Trans. Electron. Dev. 35 1172
[3]	Kishek R A, Lau Y Y 1998 Phys. Rev. Lett. 80 193
[4]	Kishek R A 1997 Ph. D. Dissertation (Ann Arbor:University of Michigan)
[5]	Hemmert D, Neuber A A, Dickens J C, Krompholz H, Hatfield L L, Kristiansen M 2000 Proc. SPIE 4031 90
[6]	Neuber A, Hemmert D, Dickens J, Krompholz H, Hatfield L L, Kristiansen M 1998 IEEE Trans. Plasma Sci. 26 296
[7]	Yamaguchi S, Saito Y, Anami S, Michizono S 1992 IEEE Trans. Nucl. Sci. 39 278
[8]	Saito Y, Michizono S, Anami S, Kobayashi S 1993 IEEE Trans. Electr. Insul. 28 566
[9]	Cheng G X 2008 M. S. Dissertation (Changsha: National University of Defense Technology) (in Chinese) [程国新 2008 硕士学位论文(长沙: 国防科学技术大学研究生院)]
[10]	Cheng G X, Cai D, Hong Z Q, Liu L 2013 IEEE Trans. Dielect. Electr. Insul. 20 1942
[11]	Cheng G X, Liu L 2011 Phys. Plasmas 18 033507
[12]	Cheng G X, Liu L 2011 IEEE Trans. Plasma Sci. 39 1067
[13]	Cheng G X, Liu L 2013 Appl. Phys. Lett. 102 243506
[14]	Cai L B, Wang J G 2009 Acta Phys. Sin. 58 3268 (in Chinese) [蔡利兵, 王建国 2009 58 3268]
[15]	Cai L B, Wang J G, Zhu X Q 2011 Acta Phys. Sin. 60 085101 (in Chinese) [蔡利兵, 王建国, 朱湘琴 2011 60 085101]
[16]	Chang C, Fang J Y, Zhang Z Q, Chen C H, Tang C X, Jin Q L 2010 Appl. Phys. Lett. 96 111502
[17]	Chang C, Liu G Z, Huang H J, Chen C H, Fang J Y 2009 Phys. Plasmas 16 083501
[18]	Chang C, Huang H J, Liu G Z, Chen C H, Hou Q 2009 J. Appl. Phys. 105 123305
[19]	Fan J Q, Hao J H 2011 Chin. Phys. B 20 068402
[20]	Li Y, Cui W Z, Zhang N, Wang X B, Wang H G, Li Y D, Zhang J F 2014 Chin. Phys. B 23 048402
[21]	Zhu F, Zhang Z C, Dai S, Luo J R 2011 Acta Phys. Sin. 60 084103 (in Chinese) [朱方, 张兆传, 戴舜, 罗继润 2011 60 084103]
[22]	Rasch J, Johansson J F 2012 Phys. Plasmas 19 123505
[23]	Ang L K, Lau Y Y, Kishek R A, Gilgenbach R M 1998 IEEE Trans. Plasma Sci. 26 290
[24]	Dong Y, Dong Z W, Yang W Y 2011 High Power Laser Particle Beams 23 454 (in Chinese) [董烨, 董志伟, 杨温渊 2011 强激光与粒子束 23 454]
[25]	Kryazhev A, Buyanova M, Semenov V, Anderson D, Lisak M, Puech J, Lapierre L, Sombrin J 2002 Phys. Plasmas 9 4736
[26]	Sazontov A, Buyanova M, Semenov V, Rakova E,Vdovicheva N 2005 Phys. Plasmas 12 053102

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