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Metal silver in the nanoscale range is widely used in the fields, such as microelectronics, optoelectronics, catalysis etc., due to its unique electrical and thermal conductivity, especially in nano-electrodes and nano-devices. Tensile deformation behavior of polycrystalline silver nanowires, in various grain size, is simulated using molecular dynamics method. Effect of grain size on elastic modulus, yield strength, and plastic deformation mechanism of polycrystalline silver nanowire is analyzed in detail. Results indicate that polycrystalline silver nanowires show a softening for grain sizes smaller than 13.49 nm, a reverse Hall-Petch relationship. At this stage, the plastic deformation is dominated by ‘sliding’ at the grain boundaries and rotating of grains; moreover, a five-fold twin is formed at the later stage of deformation. While the plastic deformation mechanism changes to dislocation sliding, when the grain size is larger than 13.49 nm, and a large number of twins are formed at the later stage of deformation.
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[2] Schiøtz J, Di Tolla F D, Jacobsen K W 1998 Nature 391 561
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[9] Xie H X, Liu B, Yin F X, Yu T 2013 Chin. Phys. B 22 010204
[10] Ma W, Zhu W J, Zhang Y L, Chen K G, Deng X L, Jing F Q 2010 Acta Phys. Sin. 59 4781 (in Chinese) [马文, 祝文军, 张亚林, 陈开果, 邓小良, 经福谦 2010 59 4781]
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[15] Pan Z L, Li Y L, Wei Q 2008 Acta Mater. 56 3470
[16] Yuan F P 2012 Sci China-Phys Mech Astron 55 1657
[17] Kadau K, Germann T C, Lomdahl P S, Holian B L, Kadau D, Entel P, Kreth M, Westerhoff F, Wolf D E 2004 Metal Mater Trans A 35A 2719
[18] Wei Y J, Gao H J 2008 Mater. Sci. & Eng. A 478 16
[19] Zheng Y G, Zhang H W, Chen Z, Lu C, Mai Y W 2009 Phys. Lett. A 373 570
[20] Gao Y J, Fu Y Q, Sun W, Sun Y L, Wang H B, Wang F Y, Zhao J W 2012 Comp. Mater. Sci. 55 322
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[1] Van Swygenhoven H 2002 Science 296 66
[2] Schiøtz J, Di Tolla F D, Jacobsen K W 1998 Nature 391 561
[3] Schiøtz J, Jacobsen K W 2003 Science 301 1357
[4] Li X F, Hu W Y, Xiao S F, Huang H Q 2008 Phys. E 40 3030
[5] Van Swygenhoven H, Caro A, Farkas D 2001 Scrip. Mater. 44 1513
[6] Li X F, Hu W Y, Xiao S F, Liu H Q 2009 Chin. J. Nonfe. Met. 19 1982 (in Chinese) [李小凡, 胡望宇, 肖时芳, 邓辉球 2009 中国有色金属学报 19 1982]
[7] Liu X M, You X C, Liu Z L, Nie J F, Zhuang Z 2009 Acta Phys. Sin. 58 1849 (in Chinese) [刘小明, 由小川, 柳占立, 聂君峰, 庄茁 2009 58 1849]
[8] Li L, Shao J L, Li Y F, Duan S Q, Liang J Q 2012 Chin. Phys. B 21 026402
[9] Xie H X, Liu B, Yin F X, Yu T 2013 Chin. Phys. B 22 010204
[10] Ma W, Zhu W J, Zhang Y L, Chen K G, Deng X L, Jing F Q 2010 Acta Phys. Sin. 59 4781 (in Chinese) [马文, 祝文军, 张亚林, 陈开果, 邓小良, 经福谦 2010 59 4781]
[11] Si L Y, Deng G Y, Lv C, Liu X H 2009 J. Mater. Metal. 8 193 (in Chinese) [司良英, 邓关宇, 吕程, 刘相华 2009 材料与冶金学报 8 193]
[12] Plimpton S 1995 J. Comp. Phys. 117 1
[13] Williams P L, Mishin Y, Hamilton J C 2006 Modelling Simul. Mater. Sci. Eng. 14 817
[14] Ackland G J, Jones A P 2006 Phys. Rev. B 73 054104
[15] Pan Z L, Li Y L, Wei Q 2008 Acta Mater. 56 3470
[16] Yuan F P 2012 Sci China-Phys Mech Astron 55 1657
[17] Kadau K, Germann T C, Lomdahl P S, Holian B L, Kadau D, Entel P, Kreth M, Westerhoff F, Wolf D E 2004 Metal Mater Trans A 35A 2719
[18] Wei Y J, Gao H J 2008 Mater. Sci. & Eng. A 478 16
[19] Zheng Y G, Zhang H W, Chen Z, Lu C, Mai Y W 2009 Phys. Lett. A 373 570
[20] Gao Y J, Fu Y Q, Sun W, Sun Y L, Wang H B, Wang F Y, Zhao J W 2012 Comp. Mater. Sci. 55 322
[21] Jiang S, Zhang H W, Zheng Y Y, Chen Z 2010 J. Phys. D: Appl. Phys. 43 335
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