InAlN材料表面态性质研究

杨彦楠; 王新强; 卢励吾; 黄呈橙; 许福军; 沈波

doi:10.7498/aps.62.177302

摘要

运用电流-电压(I-V), 变频电容-电压(C-V)和原子力显微镜 (AFM) 技术研究In组分分别为15%, 17%和21%的Ni/Au/-InAlN肖特基二极管InAlN 样品表面态性质 (表面态密度、时间常数和相对于InAlN 导带底的能级位置). I-V和变频 C-V方法测量得到的实验结果表明, 随着In组分增加, 肖特基势垒高度逐渐降低, 表面态密度依次增加. 变频 C-V特性还表明,随着测试频率降低, C-V曲线有序地朝正电压方向移动, 该趋势随着In组分的增加而变得更加明显, 这可能归结于InAlN表面态的空穴发射. AFM表面形貌研究揭示InAlN 表面粗糙度增加可能是表面态密度增加的主要原因.

关键词:

Abstract

The surface state properties (such as surface state density, time constant and level position related to the bottom of InAlN conduction band) of Ni/Au/-InAlN Schottky barrier diodes with nearly lattice matched (InN=18%) and tensilely (15%) or compressively (21%) strained InAlN barrier layer were evaluated, by using current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) measurements and atomic force microscope (AFM) images. It was found that, with increasing content of In the surface state density increased and the barrier height of the Schottky contacts decreased, respectively. The C-V curves shifted toward the positive bias values with reducing measured frequencies, which became more apparent with increasing In content. It may be due to the hole emission from the surface states of Ni/Au/-InAlN Schottcky contacts. Atomic force microscope (AFM) images indicated that the InAlN surface became rougher with increasing In content, which may be the main reason for the increased surface state densities.

Keywords:

InAlN materal with different In content /
surface states /
I-V characteristics /
frequency dependent C-V characteristics

作者及机构信息

1.
北京大学物理学院, 人工微结构和介观物理国家重点实验室, 北京 100871

基金项目: 国家重点基础研究发展计划(973计划)(批准号: 2012CB619303, 2012CB619304);国家自然科学基金(批准号: 61225019, 11023003, 10990102);国家高技术研究发展计划(863计划)(批准号: 2011AA050514, 2011AA03A103, 2011AA03A111)和教育部高等学校博士学科点专项科研基金资助项目资助的课题.

Authors and contacts

1.
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2012CB619303, 2012CB619304), the National Natural Science Foundation of China (Grant Nos. 61225019, 11023003, 10990102), the National High Technology Research & Development Project of China Program (Grant Nos. 2011AA050514, 2011AA03A103, 2011AA03A111), and the Research Fund for the Doctoral Program of Higher Education.

参考文献

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施引文献

[1]	Yue Y Z, Hu Z Y, Guo J, Sensale-Rodriguez B, Li G W, Wang R H, Faiza F, Fang T, Song B, Gao X, Guo S P, Kosel T, Snider G, Fay P, Jena D, Xing H L 2012 IEEE Electron Device Lett. 33 988
[2]	Maier D, Alomari M, Grandjean N, Carlin J F, Diforte-Poisson M A, Dua C, Delage S, Kohn E 2012 IEEE Electron Device Lett. 33 985
[3]	Lee H S, Piedra D, Sun M, Gao X, Guo S, Palacios T 2012 IEEE Electron Device Lett. 33 982
[4]	Tlek R, Ilgaz A, Gökden S, Teke A, Öztrk M K, Kasap M, Özçelik S, Arslan E, Özbay E 2009 J. Appl. Phys. 105 013707
[5]	Tirelli S, Marti D, Sun H, Alt A R, Carlin J F, Grandjean M N, Bolognesi C R 2011 IEEE Electron Device Lett. 32 13648
[6]	Choi S, Kim H J, Lochner Z, Zhang Y, Lee Y C, Shen S C, Ryou J H, Dupuis R D 2010 Appl. Phys. Lett. 96 243506
[7]	Mikulics M, Stoklas R, Dadgar A, Gregušová D, Novák J, Grtzmacher D, Krost A, Kordoš P 2010 Appl. Phys. Lett. 97 173505
[8]	Lin F 2011 Ph.D. Dissertation (Beijing: Peking University) p64 (in Chinese) [林芳 2011 博士论文 (北京: 北京大学)]
[9]	Rhoderick E H, Williams R H 1988 Metal-Semiconducter Contacts (Oxford, U.K. Clarendon Press)
[10]	Frost S R 1987 Heterojunction Band Discontinuities physics and Devices (North Holland, Amsterdam Press) p359
[11]	Levinshtein M, Rumyantsev S L, Shur M 2003 Properties of Advanced Semiconductor Materials (Chemical Industry Press) pp42-66 (in Chinese) [杨树人, 段景智编译 2003 先进半导体材料性能与数据手册 (北京: 化学工业出版社) 第42-66页]
[12]	Hasegawa H, Oyama S 2002 J. Vac. Sci. Technol. B 20 1647
[13]	Michaelson H B 1978 J. Res. Device 22 72
[14]	Lee C T, Lin Y J, Liu D S 2001 Appl. Phys. Lett. 79 2573
[15]	Kuzmík J 2002 Semicond. Sci. Technol. 17 540
[16]	Monch W(edited) 1995 Semiconductor Surface and Interface (Springer, Berlin, Press)
[17]	Arslan E, Btn S, dSafak Y, Ozbay E 2010 J. Electron.Mater. 39 2681
[18]	Ozdemir A F, Turut A, Kokce A 2003 Thin. Sol. Films 425 210
[19]	Irokawa Y, Matsuki N, Sumiya M, Sakuma Y, Sekiguchi T, Chikyo T, Sumida Y, Nakano Y 2010 Phys. Stat. Sol. C 7 1928
[20]	Wang R X, Xu S J, Shi S L, Beling C D, Fung S, Zhao D G, Yang H, Tao X M 2006 Appl. Phys. Lett. 89 143505
[21]	Osvald J 2011 J.Appl. Phys. 110 073702
[22]	Ťapajma M, Čičo K, Kuzmík J, Pogany D, Pozzovivo G, Strasser G, Carlin J F, Gradjean N, Fröhlich .2009 Semicond. Sci. Technol 24 035008
[23]	Nicollian E H, Goetzberger A 1967 Bell Sys. Tech. 46 1055
[24]	Jrgen H,Werner and Herbert H. Gijttler 1991 J. Appl. Phys. 69 1522
[25]	Chen Z T, Fujita K, Ichikawa J, Egawa T 2011 IEEE Electron Device Letts. 32 620

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