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Molecular dynamic simulations of bulk melting and surface melting of Si are carried out. The atomic interactions in Si are calculated by stillinger-weber (SW), modified embedded-atom method (MEAM), Tersoff and highly optimized empirical potential (HOEP) potentials respectively. The results show that the four potentials could exhibit the fundamental laws of Si, such as thermal expansion, melting at high temperature, endothermic and volume shrinkage in melting process. However, the detailed analyses demonstrate that the Tersoff and MEAM potentials are best to describe the melting and crystal growth of Si, SW potential is the next. The HOEP potential is even unsuitable for describing the melting and crystal growth of Si.
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Keywords:
- silicon /
- potential function /
- melting /
- molecular dynamic
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[21] Oxtoby D W 1990 Nature 347 725
[22] Jakse N, Pasturel A 2005 J. Chem. Phys. 123 244512
[23] Wang J H, Fan K G, Liu Z F, Sun J P, Zhang J G, Wang Z 2007 J. Appl. Opt. 28 645 (in Chinese) [王建华, 范开果, 刘志锋, 孙建平, 张金涛, 王哲 2007 应用光学 28 645]
[24] Huang X M 1997 Physics 26 37 (in Chinese) [黄新明 1997 物理 26 37]
[25] Bazant M Z, Kaxiras E, Justo J F 1997 Phys. Rev. B 56 8542
[26] Howell P C 2012 J. Chem. Phys. 137 224111
[27] Liu Z J, Cheng X L, Zhang H, Cai L C 2004 Chin. Phys. 13 384
[28] Wolf D, Okamoto P, Yip S, Lutsko J, Kluge M 1990 J. Mater. Res. 5 286
[29] He A M, Qin C S, Shao J L, Wang F 2009 Acta Phys. Sin. 58 2667 (in Chinese) [何安民, 秦承森, 邵建立, 王裴 2009 58 2667]
[30] Dinsdale A T 1991 Comput. Coupl. Phase Diagram Thermochem. 15 317
[31] Tsao J Y, Aziz M J, Thompson M O, Peercy P S 1986 Phys. Rev. Lett. 56 2712
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[1] Scheel H J, Fukuda T, Wiley J 2003 Crystal Growth Technol (Chichester: John Wiley 8c Sons) p3
[2] Wang Q, Chen Z, Pu S D, Yang Q C 1996 Semicond. Optoelec. 17 224 (in Chinese) [王旗, 陈振, 浦树德, 杨晴初 1996 半导体光电 17 224]
[3] Balamane H, Halicioglu T, Tiller W A 1992 Phys. Rev. B 46 2250
[4] Zhou Z Y, Wang T B, Cheng Z N 1999 Acta Phys. Sin. 48 2228 (in Chinese) [周正有, 王铁兵, 程兆年 1999 48 2228]
[5] Stillinger F H, Weber T A 1985 Phys. Rev. B 31 5262
[6] Stich I, Car R, Parrinello M 1991 Phys. Rev. B 44 11092
[7] Wang C Z, Chan C T, Ho K M 1992 Phys. Rev. B 45 12227
[8] Tersoff J 1986 Phys. Rev. Lett. 56 632
[9] Tersoff J 1988 Phys. Rev. B 38 9902
[10] Tersoff J 1989 Phys. Rev. B 39 5566
[11] Baskes M I, Nelson J S, Wright A F1989 Phys. Rev. B 40 6085
[12] Baskes M I 1992 Phys. Rev. B 46 2727
[13] Lee B J 2007 Calphad: Computer Coupling of Phase Diagrams and Thermochemistry 31 95
[14] Lenosky T J, Sadigh B, Alonso E, Bulatov V V, de la Rubia T D, Kim J, Voter A F, Kress J D 2000 Modell. Simul. Mater. Sci. Eng. 8 825
[15] Chuang F C, Ciobanu C V, Predescu C, Wang C Z, Ho K M 2005 Surf. Sci. 578 183
[16] Zhou N G, Hong T, Zhou L 2012 Acta Phys. Sin. 61 028101 (in Chinese) [周耐根, 洪涛, 周浪 2012 61 028101]
[17] Yaoqi Z, Karplus M, Ball K D, Berry R S 2002 J. Chem. Phys. 116
[18] Nguyen T, Ho P S, Kwok T, Nitta C, Yip S 1986 Phys. Rev. Lett. 57 1919
[19] Lutsko J F, Wolf D, Phillpot S R, Yip S 1989 Phys. Rev. B 40 2841
[20] Wang H L, Wang X X, Liang H Y 2005 Acta Metall. Sin. 41 568 (in Chinese) [王海龙, 王秀喜, 梁海弋 2005 金属学报 41 568]
[21] Oxtoby D W 1990 Nature 347 725
[22] Jakse N, Pasturel A 2005 J. Chem. Phys. 123 244512
[23] Wang J H, Fan K G, Liu Z F, Sun J P, Zhang J G, Wang Z 2007 J. Appl. Opt. 28 645 (in Chinese) [王建华, 范开果, 刘志锋, 孙建平, 张金涛, 王哲 2007 应用光学 28 645]
[24] Huang X M 1997 Physics 26 37 (in Chinese) [黄新明 1997 物理 26 37]
[25] Bazant M Z, Kaxiras E, Justo J F 1997 Phys. Rev. B 56 8542
[26] Howell P C 2012 J. Chem. Phys. 137 224111
[27] Liu Z J, Cheng X L, Zhang H, Cai L C 2004 Chin. Phys. 13 384
[28] Wolf D, Okamoto P, Yip S, Lutsko J, Kluge M 1990 J. Mater. Res. 5 286
[29] He A M, Qin C S, Shao J L, Wang F 2009 Acta Phys. Sin. 58 2667 (in Chinese) [何安民, 秦承森, 邵建立, 王裴 2009 58 2667]
[30] Dinsdale A T 1991 Comput. Coupl. Phase Diagram Thermochem. 15 317
[31] Tsao J Y, Aziz M J, Thompson M O, Peercy P S 1986 Phys. Rev. Lett. 56 2712
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